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BCP69T3

Onsemi

BCP69T3 by Onsemi

BCP69T3 by Onsemi is a PNP Power BJT with 1A IC, 20V VCE, and 60MHz fT. Ideal for applications requiring high power dissipation up to 1.5W in small outline packages. Suitable for surface mount designs needing a single configuration transistor with Gull Wing terminals.

Median Price

$0.188

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,412 parts In-Stock

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Digiode

USA . 3,416 parts In-Stock

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3,416

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Bristol Electronics

USA . 3,090 parts In-Stock

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-

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$0.188

1k+ parts

$0.113

10k+ parts

$0.075

3,090

-

$0.188

$0.113

$0.075

Anansix

USA . 973 parts In-Stock

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973

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Distributors (Availability)

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One Stop Electronics

USA . 624 parts In-Stock

1+ parts

$28.050

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624

$28.050

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Kulean Microsystems

USA . 8,028 parts In-Stock

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8,028

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UNI Independent Distributors

Spain . 6,702 parts In-Stock

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TANS Electronics

Latvia . 5,944 parts In-Stock

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5,944

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SupplyDigital Components

Austria . 5,490 parts In-Stock

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5,490

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Problanco Electronics

Mexico . 4,007 parts In-Stock

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Corphita

USA . 3,865 parts In-Stock

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Northwest PG Solutions

USA . 3,496 parts In-Stock

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UHIMA Technologies

Türkiye . 518 parts In-Stock

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518

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Native Components

USA . 494 parts In-Stock

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Corohmni

South Africa . 387 parts In-Stock

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387

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Overview

Experience the power of innovation with the BCP69T3 by Onsemi. As a leader in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that are designed to exceed expectations. This PNP transistor offers unparalleled performance and reliability, making it ideal for a wide range of applications. Whether you're looking to enhance your electronic devices or improve efficiency in your projects, the BCP69T3 provides the value, benefits, and advantages you need. Trust Onsemi for all your transistor needs and unlock the potential of your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring longevity and reliability in various operating conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this product suitable for a wide range of circuit designs.

Configuration: SINGLE

Simplifies circuit design and reduces component count, making the transistor easier to use in various applications.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and effort during manufacturing and allowing for compact designs.

Package Shape: RECTANGULAR

Facilitates efficient placement on the PCB, optimizing space utilization and contributing to a well-organized circuit layout.

Terminal Form: GULL WING

Offers secure soldering connections and ease of rework, ensuring reliable electrical connections and simplifying maintenance.

Maximum Power Dissipation (Abs): 1.5 W

Supports high-power applications without risk of overheating, allowing for robust performance in demanding scenarios.

Package Style (Meter): SMALL OUTLINE

Reduces footprint on the PCB, enabling compact designs and enhancing overall system integration.

Minimum DC Current Gain (hFE): 60

Ensures consistent and predictable amplification characteristics, supporting stable operation in various circuit configurations.

Maximum Operating Temperature: 140 °C

Withstands elevated temperatures, making the transistor suitable for industrial and automotive applications where heat dissipation is crucial.

Maximum Collector-Emitter Voltage: 20 V

Provides sufficient voltage handling capacity for a wide range of applications, enhancing the versatility of the transistor.

Transistor Element Material: SILICON

Offers reliable and consistent performance, ensuring high-quality signal amplification and switching capabilities.

Maximum Collector Current (IC): 1 A

Supports moderate current loads, making the transistor suitable for a variety of power control and amplification tasks.

Terminal Finish: TIN LEAD

Facilitates soldering and ensures reliable electrical connections, enhancing the overall performance and longevity of the transistor.

Terminal Position: DUAL

Provides flexibility in circuit layout and connection options, accommodating different design requirements and integration scenarios.

Case Connection: COLLECTOR

Simplifies circuit design and layout by clearly indicating the terminal connection, reducing the risk of errors during assembly.

Peak Reflow Temperature °C: 235

Supports efficient and reliable soldering processes, ensuring proper assembly and enhancing the overall quality of the end product.

Nominal Transition Frequency (fT): 60 MHz

Enables high-speed switching and signal amplification, making the transistor suitable for applications requiring fast response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP69T3 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

140 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCP69T3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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