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BCP68T3G

Onsemi

BCP68T3G by Onsemi

Onsemi's BCP68T3G is a NPN Power BJT with VCEsat of 0.5V, hFE of 60, and IC of 1A. Ideal for switching applications in small outline packages, operating b/w -65 to 150 °C. Suitable for surface mount designs requiring low power dissipation and high transition frequency up to 60MHz.

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Kulean Microsystems

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Overview

Enhance your power management systems with the BCP68T3G by Onsemi. Crafted with precision and expertise, this NPN Power Bipolar Junction Transistor offers seamless switching capabilities, making it ideal for a wide range of applications. Its high-quality construction and reliable performance ensure optimal functionality, while its compact design and easy surface mount installation provide added convenience. Trust in Onsemi's reputation for excellence and elevate your projects with the value and efficiency that the BCP68T3G brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and offer reliable performance.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into various applications.

Transistor Application: SWITCHING

Designed specifically for switching tasks, ensuring efficient operation.

Surface Mount: YES

Optimal for modern PCB design and assembly processes, saving space and reducing costs.

Maximum VCEsat: 0.5 V

Low VCE saturation voltage helps minimize power losses and improve efficiency.

Package Shape: RECTANGULAR

Easily accommodates the necessary terminals and connections for the transistor.

Terminal Form: GULL WING

Provides a secure and reliable connection for surface mounting applications.

No. of Terminals: 4

Offers flexibility in circuit design and connectivity options.

Maximum Power Dissipation (Abs): 1.5 W

Can handle higher power dissipation levels, suitable for various applications.

Package Style (Meter): SMALL OUTLINE

Compact package style saves space on the PCB and allows for higher component density.

Minimum DC Current Gain (hFE): 60

Ensures consistent and reliable amplification of the input signal.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 20 V

Provides a safe operating voltage margin for the transistor.

Transistor Element Material: SILICON

Silicon-based material ensures high performance and reliability.

Minimum Operating Temperature: -65 °C

Can operate in extremely low-temperature conditions without issues.

Maximum Collector Current (IC): 1 A

Able to handle moderate current levels, suitable for many applications.

Terminal Finish: TIN

Provides corrosion resistance and ensures good electrical contacts.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit layout and design.

Case Connection: COLLECTOR

Easy connection to the collector terminal for efficient circuit operation.

Peak Reflow Temperature °C: 260

Can withstand high-temperature reflow soldering processes during assembly.

Nominal Transition Frequency (fT): 60 MHz

High transition frequency allows for fast switching speeds and improved performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP68T3G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCP68T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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