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2SJ601-Z-E1-AZ

Renesas Electronics

2SJ601-Z-E1-AZ by Renesas Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Case Connection: DRAIN; No. of Elements: 1;

Median Price

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Lifecycle Status

EOL

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1

In-Stock Inventory

< 1k

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LIBRA Elektronik GmbH

Germany . 70 parts In-Stock

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70

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Native Components

USA . 731 parts In-Stock

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$0.239

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$0.229

731

$0.239

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Northwest PG Solutions

USA . 1,676 parts In-Stock

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$0.263

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$0.232

1,676

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$0.232

Component Stockers USA

USA . 774 parts In-Stock

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$99.990

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774

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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22,000

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Kepictronics

USA . 19,000 parts In-Stock

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19,000

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Futuretech Components

Singapore . 1,349 parts In-Stock

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1,349

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Technical Specifications

Small Signal Field Effect Transistors (FET) 2SJ601-Z-E1-AZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

36 A

Maximum Drain Current (ID):

36 A

Maximum Drain-Source On Resistance:

.046 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SJ601-Z-E1-AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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