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2SJ600-AZ

Renesas Electronics

2SJ600-AZ by Renesas Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Qualification: Not Qualified; No. of Terminals: 3;

Median Price

$3.910

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

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Chip1Stop

Japan . 80 parts In-Stock

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$3.910

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80

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$3.910

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Distributors (Availability)

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$1.244

100+ parts

$1.132

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$1.020

10k+ parts

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450

$1.244

$1.132

$1.020

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Corohmni

South Africa . 713 parts In-Stock

1+ parts

$1.726

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713

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A-Z Elektronik GmbH

Germany . 10,560 parts In-Stock

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10,560

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Northwest PG Solutions

USA . 2,116 parts In-Stock

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2,116

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Native Components

USA . 314 parts In-Stock

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314

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Technical Specifications

Small Signal Field Effect Transistors (FET) 2SJ600-AZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

25 A

Maximum Drain Current (ID):

25 A

Maximum Drain-Source On Resistance:

.079 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SJ600-AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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