Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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ZVN3320FTC
Zetex Plc
Zetex Plc's ZVN3320FTC is a N-CHANNEL FET with 200V DS Breakdown Voltage, 0.06A ID, and 25 ohm RDS(on). Ideal for small outline applications requiring high temp operation up to 150°C. Suitable for enhancing circuit performance in various electronic devices.
SINGLE
200 V
.06 A
25 ohm
METAL-OXIDE SEMICONDUCTOR
5 pF
R-PDSO-G3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
Not Qualified
YES
MATTE TIN
GULL WING
DUAL
SILICON
ZVP3310FTC
ZVP3310FTC by Zetex Plc is a P-CHANNEL FET with 100V DS Breakdown Voltage, 20 ohm Drain-Source Resistance, and 150°C Operating Temp. Ideal for small signal applications in electronics due to its ENHANCEMENT MODE operation and compact SMALL OUTLINE package style.
100 V
.075 A
20 ohm
260
P-CHANNEL
40
BSS123TC
BSS123TC by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. It features 100V DS Breakdown Voltage, 0.17A ID, and 6 ohm RDS(ON). With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR tech, it's ideal for small outline surface mount designs.
.17 A
6 ohm
4 pF
SWITCHING
458
Nte Electronics
Nte Electronics 458 is a N-CHANNEL FET with DEPLETION MODE operation. It features PLASTIC/EPOXY body, SILICON element, and WIRE terminals in a CYLINDRICAL package. Ideal for low-power applications requiring high-frequency switching capabilities.
LOW NOISE
JUNCTION
TO-92
O-PBCY-W3
DEPLETION MODE
ROUND
CYLINDRICAL
NO
WIRE
BOTTOM
466
Nte Electronics 466 is a N-CHANNEL FET with METAL body, ideal for SWITCHING applications. Features DEPLETION MODE operation and SILICON element material. Offers low 18 ohm Drain-Source On Resistance in a CYLINDRICAL package with WIRE terminals.
18 ohm
TO-18
O-MBCY-W3
METAL
6HP04CH-TL-W
Onsemi
6HP04CH-TL-W by Onsemi is a P-CHANNEL FET with 0.37A max drain current and 0.6W power dissipation. Ideal for applications requiring surface mount technology, it operates at up to 150 °C and features TIN BISMUTH terminal finish.
.37 A
e6
.6 W
Other Transistors
TIN BISMUTH
30
CPH3459-TL-W
CPH3459-TL-W by Onsemi is a N-CHANNEL FET with 0.5A max drain current and 1W max power dissipation. Ideal for surface mount applications, it operates up to 150°C and features metal-oxide semiconductor technology. Suitable for various electronic devices requiring efficient power management in compact designs.
.5 A
1 W
FET General Purpose Power
PCP1402-TD-H
PCP1402-TD-H by Onsemi is a N-CHANNEL FET with 1.2A max drain current and 3.5W power dissipation. Ideal for applications requiring high temperature tolerance up to 150 °C, such as in surface mount configurations for compact electronic devices.
1.2 A
3.5 W
SFT1452-W
The Onsemi SFT1452-W is a N-CHANNEL FET with 3A max drain current and 26W max power dissipation. Ideal for applications requiring high power handling in temperatures up to 150 °C, using METAL-OXIDE SEMICONDUCTOR technology.
3 A
26 W
Tin/Bismuth (Sn/Bi)
2N7002-E3
Vishay Intertechnology
2N7002-E3 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for small outline applications requiring high power dissipation up to 0.2W in enhancement mode operation at temperatures up to 150°C.
60 V
.115 A
7.5 ohm
.2 W
DMN5L06K-7
Diodes Incorporated
DMN5L06K-7 by Diodes Inc. is a N-channel FET for switching applications. It has a 50V DS breakdown voltage, 0.3A max drain current, and 3 ohm max on-resistance. With a small outline package style, it operates b/w -65 to 150 °C and meets MIL-STD-202 standards.
50 V
.3 A
3 ohm
-65 Cel
.35 W
MIL-STD-202
2N4392-E3
2N4392-E3 by Vishay Intertechnology is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 1.8W and drain-source on resistance of 60 ohm. Ideal for SWITCHING applications due to its low feedback capacitance of 3.5pF and temperature range from -55°C to 200°C.
LOW INSERTION LOSS
GATE
60 ohm
3.5 pF
TO-206AA
200 Cel
-55 Cel
1.8 W
Matte Tin (Sn)
2N5457_D74Z
Fairchild Semiconductor
2N5457_D74Z by Fairchild Semiconductor is a N-CHANNEL FET with DEPLETION MODE operation. It has a max power dissipation of 0.31W and a max operating temperature of 150°C. Ideal for SWITCHING applications due to its low feedback capacitance of 3pF.
3 pF
O-PBCY-T3
.31 W
THROUGH-HOLE
2N4117A-E3
Vishay Intertechnology's 2N4117A-E3 is a N-CHANNEL FET with DEPLETION MODE operation. It has a max power dissipation of 0.3W and feedback capacitance of 1.5pF, making it ideal for AMPLIFIER applications. The transistor features a METAL package body, ROUND shape, and WIRE terminals for efficient performance up to 175°C.
1.5 pF
TO-206AF
O-MBCY-W4
4
175 Cel
.3 W
AMPLIFIER
2N4393-E3
2N4393-E3 by Vishay Intertechnology is a N-CHANNEL FET with 1.8W power dissipation, -55 to 200 °C operating temp range, and 100 ohm max drain-source resistance. Ideal for switching applications due to its DEPLETION MODE operation and low feedback capacitance of 3.5 pF.
100 ohm
MCH3376-TL-W
MCH3376-TL-W by Onsemi is a P-CHANNEL FET with 1.5A max drain current and 0.8W max power dissipation. Ideal for surface mount applications, it operates up to 150 °C and features metal-oxide semiconductor technology.
1.5 A
.8 W
BF861A,215
NXP Semiconductors
BF861A,215 by NXP Semiconductors is a small signal N-CHANNEL FET with 25V DS breakdown voltage. Ideal for amplifier applications, it operates in depletion mode and has a max power dissipation of 0.25W. With a peak reflow temperature of 260°C, this transistor features a junction technology and offers low feedback capacitance at 2.7pF.
25 V
2.7 pF
TO-236AB
.25 W
TIN
BF861B,215
NXP Semiconductors BF861B,215 is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it features DEPLETION MODE operation and 2.7pF Crss feedback capacitance. This SMALL OUTLINE transistor has a max power dissipation of 0.25W and operates up to 150°C temperature.
BF861C,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Peak Reflow Temperature (C): 260; JEDEC-95 Code: TO-236AB;
Tin (Sn)
BF862,215
BF862,215 by NXP Semiconductors is a small signal FET with N-channel configuration for amplifier applications. It features a min DS breakdown voltage of 20V and max drain current of 0.04A. With surface mount capability and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.
20 V
.04 A
.225 W
BFR30,215
NXP Semiconductors' BFR30,215 is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it features DEPLETION MODE operation and GULL WING terminals. With a max power dissipation of 0.3W and operating temperature up to 150°C, it offers reliable performance in small outline packages.
.01 A
BFR31,215
NXP Semiconductors' BFR31,215 is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it features DEPLETION MODE operation and GULL WING terminals. With a max power dissipation of 0.3W and operating temp up to 150°C, it's designed for small outline packages.
IEC-134
BFT46,215
BFT46,215 by NXP Semiconductors is a small signal N-CHANNEL FET transistor with a min DS breakdown voltage of 25V. It is commonly used as an amplifier in various applications. The transistor operates in depletion mode and has a max power dissipation of 0.25W at a max operating temperature of 150°C.
BSR56,215
NXP Semiconductors' BSR56,215 is a N-CHANNEL FET for SWITCHING applications. With 40V DS Breakdown Voltage and 0.3W Power Dissipation, it operates in DEPLETION MODE. Featuring GULL WING terminals and SILICON element material, it offers reliable performance up to 150°C.
40 V
.02 A
BSR57,215
NXP Semiconductors' BSR57,215 is a N-CHANNEL FET for SWITCHING applications. With 40V DS Breakdown Voltage and 40ohm RDS(on), it operates in DEPLETION MODE at 150°C. This SMALL OUTLINE transistor has GULL WING terminals and is ideal for high-temp environments requiring low power dissipation.
40 ohm
BSR58,215
NXP Semiconductors' BSR58,215 is a N-CHANNEL FET for SWITCHING applications. With a 40V DS Breakdown Voltage and 60 ohm On Resistance, it operates in DEPLETION MODE at up to 150°C. This SMALL OUTLINE transistor with GULL WING terminals is ideal for compact electronic devices requiring low power dissipation.
.005 A
J109,126
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Shape: ROUND; No. of Elements: 1;
12 ohm
15 pF
.4 W
J112,126
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Shape: ROUND; Maximum Drain-Source On Resistance: 50 ohm;
50 ohm
J113,126
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Drain-Source On Resistance: 100 ohm; JESD-30 Code: O-PBCY-T3;
J175,116
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Style (Meter): CYLINDRICAL; Field Effect Transistor Technology: JUNCTION;
30 V
125 ohm
FET General Purpose Small Signal
J176,126
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Package Shape: ROUND; Minimum DS Breakdown Voltage: 30 V;
250 ohm
J177,126
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Terminal Form: THROUGH-HOLE; JESD-30 Code: O-PBCY-T3;
300 ohm
PMBF4392,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e3; Maximum Drain-Source On Resistance: 60 ohm;
.006 A
PMBF4393,215
NXP Semiconductors' PMBF4393,215 is a N-CHANNEL FET for SWITCHING applications. With a 40V DS Breakdown Voltage and 100 ohm On Resistance, it operates in DEPLETION MODE. This SMALL OUTLINE transistor has a max power dissipation of 0.25W and can handle up to 0.003A drain current.
.003 A
PMBFJ108,215
The NXP Semiconductors PMBFJ108,215 is a N-CHANNEL FET for SWITCHING applications. It features a 25V DS Breakdown Voltage, 8 ohm Drain-Source On Resistance, and 15pF Feedback Capacitance. With a DEPLETION MODE operation and GULL WING terminals, it offers reliable performance in small outline packages.
8 ohm
PMBFJ109,215
NXP Semiconductors' PMBFJ109,215 is a N-CHANNEL FET for SWITCHING applications. With 25V DS Breakdown Voltage and 12 ohm Drain-Source On Resistance, it operates in DEPLETION MODE. This SMALL OUTLINE transistor has a max power dissipation of 0.25W at 150°C.
PMBFJ110,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e3; Maximum Feedback Capacitance (Crss): 15 pF;
PMBFJ111,215
PMBFJ111,215 by NXP Semiconductors is a small signal N-channel FET with a min DS breakdown voltage of 40V. It is used for switching applications and operates in depletion mode. With a max power dissipation of 0.3W and a max operating temperature of 150°C, it offers reliable performance in various electronic devices.
30 ohm
PMBFJ112,215
The NXP Semiconductors PMBFJ112,215 is a small signal N-CHANNEL FET for switching applications. It features a 40V DS breakdown voltage and 50 ohm max drain-source resistance. With a power dissipation of 0.3W and operating temperature up to 150°C, it is ideal for depletion mode operation in various electronic circuits.
PMBFJ113,215
The NXP Semiconductors PMBFJ113,215 is a small signal N-CHANNEL FET for switching applications. It features a 40V DS breakdown voltage and 0.3W power dissipation in a PLASTIC/EPOXY package with GULL WING terminals. Operating in DEPLETION MODE, it has a max temperature of 150°C and an on-resistance of 100 ohm, making it suitable for various electronic circuits.
PMBFJ174,215
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Operating Mode: DEPLETION MODE; JESD-609 Code: e3;
85 ohm
PMBFJ175,215
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Package Style (Meter): SMALL OUTLINE; Operating Mode: DEPLETION MODE;
PMBFJ176,215
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Minimum DS Breakdown Voltage: 30 V; Terminal Finish: TIN;
PMBFJ177,215
PMBFJ177,215 by NXP Semiconductors is a P-CHANNEL small signal FET with a min DS breakdown voltage of 30V. It is used for switching applications and operates in depletion mode. This surface mount transistor has a max power dissipation of 0.3W and can withstand temperatures up to 150°C.
2SK3377(0)-Z-E1-AZ
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Drain Current (Abs) (ID): 20 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
20 A
NOT SPECIFIED
30 W
2SK3377(0)-Z-E2-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
2SK3576-T1B-AT
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Drain Current (Abs) (ID): 4 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
4 A
1.25 W
2SK3813-AZ
The Renesas Electronics 2SK3813-AZ is a N-CHANNEL FET with max ID of 60A and Pd of 84W. Ideal for high-power applications, it operates up to 150°C, making it suitable for industrial use where peak reflow temp reaches 260°C.
60 A
84 W
10
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