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BSR56,215

NXP Semiconductors

BSR56,215 by NXP Semiconductors

NXP Semiconductors' BSR56,215 is a N-CHANNEL FET for SWITCHING applications. With 40V DS Breakdown Voltage and 0.3W Power Dissipation, it operates in DEPLETION MODE. Featuring GULL WING terminals and SILICON element material, it offers reliable performance up to 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 9,221 parts In-Stock

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Digiode

USA . 4,015 parts In-Stock

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VNN

France . 3,516 parts In-Stock

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Anansix

USA . 2,192 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,785 parts In-Stock

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ComSIT USA

USA . 1,785 parts In-Stock

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Nova Conductors

Japan . 84 parts In-Stock

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Aztec Data Supply Inc.

USA . 713 parts In-Stock

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$0.728

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Corohmni

South Africa . 681 parts In-Stock

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AZTECH Wire

Italy . 477 parts In-Stock

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$9.807

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One Stop Electronics

USA . 1,165 parts In-Stock

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$60.050

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Perfect Parts

USA . 2,326 parts In-Stock

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Argo Parts USA

USA . 1,397 parts In-Stock

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UNI Independent Distributors

Spain . 1,237 parts In-Stock

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Corphita

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Continental Prestige Electronics

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Bastille Electronics

Australia . 450 parts In-Stock

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Overview

Enhance your electronic projects with the BSR56,215 from NXP Semiconductors, a leading manufacturer known for its high-quality components. This small signal field effect transistor offers exceptional performance in switching applications, making it a versatile choice for a wide range of projects. With its N-channel configuration and depletion mode operation, this transistor provides reliable and efficient functionality. The compact, surface-mount design makes it easy to integrate into your designs, while the low power dissipation ensures optimal performance. Trust NXP Semiconductors to deliver superior products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability, making it a cost-effective choice for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer higher electron mobility, resulting in better performance and efficiency.

Configuration: SINGLE

Single configuration simplifies circuit design and allows for easier integration into existing systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and low power consumption.

Surface Mount: YES

Surface mount capability enables easy and space-efficient PCB assembly.

Minimum DS Breakdown Voltage: 40 V

With a high breakdown voltage, this transistor can handle high voltage applications reliably.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to mount and arrange multiple transistors on a PCB.

Terminal Form: GULL WING

The gull wing form factor simplifies soldering and ensures secure connections.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for easy control of current flow, making it suitable for various circuit designs.

No. of Terminals: 3

With three terminals, this transistor simplifies circuit connections and reduces complexity.

Maximum Power Dissipation (Abs): 0.3 W

With a high power dissipation capability, this transistor can handle demanding applications without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, ideal for compact designs.

Field Effect Transistor Technology: JUNCTION

Junction technology offers high performance and reliability, making it suitable for critical applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand harsh environmental conditions.

Transistor Element Material: SILICON

Silicon elements ensure high performance, low noise, and long-term reliability.

Terminal Finish: TIN

Tin finish provides excellent solderability, ensuring strong and reliable connections.

Maximum Drain Current (ID): 0.02 A

High maximum drain current capability allows for handling larger loads and currents.

Maximum Drain-Source On Resistance: 25 ohm

Low on-resistance minimizes power loss and improves efficiency in switching applications.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and integration into various systems.

Maximum Time At Peak Reflow Temperature (s): 30

This transistor can withstand peak reflow temperatures for a specified duration during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability ensures reliable solder joints during PCB assembly.

Maximum Feedback Capacitance (Crss): 5 pF

Low feedback capacitance minimizes signal loss and distortion, ideal for high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSR56,215 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

.02 A

Maximum Drain-Source On Resistance:

25 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

5 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSR56,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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