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BSR58L

Onsemi

BSR58L by Onsemi

BSR58L by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features a 40V DS Breakdown Voltage, 60 ohm Drain-Source On Resistance, and operates in DEPLETION MODE. With GULL WING terminals and SILICON element material, it is ideal for surface mount configurations in small outline packages.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 709 parts In-Stock

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TANS Electronics

Latvia . 5,702 parts In-Stock

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Kulean Microsystems

USA . 5,644 parts In-Stock

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Problanco Electronics

Mexico . 5,589 parts In-Stock

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SupplyDigital Components

Austria . 4,137 parts In-Stock

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Corphita

USA . 2,330 parts In-Stock

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Native Components

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Corohmni

South Africa . 433 parts In-Stock

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UHIMA Technologies

Türkiye . 248 parts In-Stock

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Northwest PG Solutions

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Overview

Upgrade your electronics with the BSR58L from Onsemi, a leading manufacturer known for its quality and reliability. This small signal field effect transistor (FET) is perfect for switching applications, offering a maximum DS breakdown voltage of 40V and a maximum drain-source on resistance of 60 ohms. With its N-channel configuration and depletion mode operation, this transistor provides high performance in a compact package. Trust Onsemi to deliver superior products that meet your needs and exceed your expectations. Experience the difference with the BSR58L.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the transistor, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have higher mobility and conductivity compared to P-channel transistors, making them ideal for high-performance applications.

Configuration: SINGLE

Single configuration transistors are easier to work with and integrate into circuit designs, simplifying the overall setup process.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control the flow of current in electronic circuits, making it suitable for a wide range of devices.

Surface Mount: YES

Surface mount technology allows for easy and secure installation on circuit boards, making the product ideal for compact and space-constrained applications.

Minimum DS Breakdown Voltage: 40 V

With a minimum breakdown voltage of 40V, this transistor can handle higher voltages without risk of damage, ensuring reliable performance in various electronic systems.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient placement and orientation on circuit boards, optimizing space utilization and facilitating easier assembly.

Terminal Form: GULL WING

Gull wing terminals provide secure connections to the circuit board, reducing the risk of signal loss or interference and ensuring stable performance under different operating conditions.

Operating Mode: DEPLETION MODE

Depletion mode transistors offer precise control over the current flow by default, making them suitable for applications where accurate switching and regulation are essential.

No. of Terminals: 3

Having only three terminals simplifies the circuitry and reduces complexity in design, making the transistor easy to work with for both beginners and experienced engineers.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes the transistor compact and lightweight, ideal for applications with limited space constraints or where portability is a priority.

Field Effect Transistor Technology: JUNCTION

Junction FET technology provides efficient current control and high performance characteristics, ensuring reliable operation in various electronic devices and systems.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high heat levels without affecting its performance, making it suitable for demanding operating conditions.

Transistor Element Material: SILICON

Silicon is a widely used material in transistor manufacturing due to its excellent electrical properties, ensuring high performance, reliability, and durability of the product.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good conductivity and solderability, ensuring secure connections and easy integration into circuit designs for reliable performance.

Maximum Drain-Source On Resistance: 60 ohm

With a maximum on-resistance of 60 ohms, this transistor offers low resistance and minimal power loss, ensuring efficient operation and energy savings in electronic circuits.

Terminal Position: DUAL

Dual terminal positions provide versatility in circuit design and allow for flexible connection options, enhancing compatibility and usability in different electronic applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSR58L attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

40 V

Maximum Drain-Source On Resistance:

60 ohm

Field Effect Transistor Technology:

JUNCTION

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSR58L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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