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PMBFJ108,215

NXP Semiconductors

PMBFJ108,215 by NXP Semiconductors

The NXP Semiconductors PMBFJ108,215 is a N-CHANNEL FET for SWITCHING applications. It features a 25V DS Breakdown Voltage, 8 ohm Drain-Source On Resistance, and 15pF Feedback Capacitance. With a DEPLETION MODE operation and GULL WING terminals, it offers reliable performance in small outline packages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Inventory MP

USA . 23,593 parts In-Stock

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23,593

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Bristol Electronics

USA . 17,393 parts In-Stock

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17,393

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Vyrian

USA . 8,248 parts In-Stock

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8,248

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Digiode

USA . 3,201 parts In-Stock

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3,201

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Anansix

USA . 1,930 parts In-Stock

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1,930

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LIBRA Elektronik GmbH

Germany . 1,025 parts In-Stock

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1,025

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Distributors (Availability)

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Ampacity Inc.

Singapore . 824 parts In-Stock

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$0.050

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824

$0.050

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Corohmni

South Africa . 238 parts In-Stock

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$0.738

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238

$0.738

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AZTECH Wire

Italy . 912 parts In-Stock

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$13.270

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912

$13.270

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One Stop Electronics

USA . 489 parts In-Stock

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$43.050

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489

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Component Stockers USA

USA . 542 parts In-Stock

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$99.990

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542

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Perfect Parts

USA . 74,022 parts In-Stock

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UNI Independent Distributors

Spain . 4,917 parts In-Stock

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Robosynatics

Brazil . 4,248 parts In-Stock

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$1.500

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$1.470

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$1.470

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$1.470

Lucentia Tech

USA . 4,248 parts In-Stock

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$1.500

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$1.470

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$1.470

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$1.470

Argo Parts USA

USA . 2,710 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,570 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Corphita

USA . 1,545 parts In-Stock

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Continental Prestige Electronics

USA . 1,381 parts In-Stock

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Microchip USA

USA . 184 parts In-Stock

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S.R.D Solutions

India . 180 parts In-Stock

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Overview

Discover the powerful performance and reliability of the PMBFJ108,215 by NXP Semiconductors. As a leading manufacturer in the industry, NXP delivers top-quality Small Signal Field Effect Transistors that are perfect for various switching applications. With its N-CHANNEL polarity and DEPLETION MODE operating mode, this transistor offers exceptional value and efficiency. Trust in NXP's expertise to provide you with a high-performance solution that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow and control, enhancing the overall performance of the transistor.

Configuration: SINGLE

Simplified design and operation make it easy to use and integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and reliable operation.

Surface Mount: YES

Facilitates easy installation and PCB layout, saving time and space.

Minimum DS Breakdown Voltage: 25 V

Provides a high breakdown voltage for added protection and stability in high voltage applications.

Package Shape: RECTANGULAR

Compact and space-saving design that allows for efficient use of board space.

Terminal Form: GULL WING

Ensures secure and reliable connections during installation and operation.

Operating Mode: DEPLETION MODE

Allows for easy control of current flow and power management in various applications.

No. of Terminals: 3

Simple and straightforward connection setup for easy integration into circuits.

Maximum Power Dissipation (Abs): 0.25 W

Efficient power handling capability ensures reliable performance under heavy loads.

Package Style (Meter): SMALL OUTLINE

Compact and lightweight design for easy handling and installation.

Field Effect Transistor Technology: JUNCTION

Utilizes junction technology for improved performance and reliability in various applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environmental conditions.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability for long-lasting use.

Terminal Finish: TIN

Tin finish ensures good conductivity and resistance to corrosion for reliable connections.

Maximum Drain-Source On Resistance: 8 ohm

Low on-resistance ensures efficient power handling and minimal power loss in switching applications.

Terminal Position: DUAL

Dual terminal position allows for versatile installation and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures quick and efficient reflow process during installation for improved productivity.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and connection reliability during installation.

Maximum Feedback Capacitance (Crss): 15 pF

Low feedback capacitance ensures stable and efficient performance in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) PMBFJ108,215 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

25 V

Maximum Drain-Source On Resistance:

8 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

15 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PMBFJ108,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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