Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NXP Semiconductors' PMBF4391,215 is a N-CHANNEL FET with 40V DS breakdown voltage. Ideal for switching applications, it features a single configuration with built-in diode and operates in depletion mode. With a max drain current of 0.012A and small outline package style, it offers fast turn on/off times of 80ns/20ns.
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This material offers good protection and insulation for the transistor, ensuring reliable performance in various environments.
N-channel transistors typically have higher mobility and conductivity, making them efficient for switching applications.
The built-in diode allows for more versatile functionality in switching applications where reverse voltage protection is needed.
This transistor is specifically designed for switching applications, making it reliable and efficient in controlling electrical circuits.
Being surface mountable, this transistor is easy to install on circuit boards, saving space and allowing for high-density layouts.
With a high breakdown voltage, this transistor can handle higher voltages safely, increasing its versatility in various applications.
The rectangular shape of the package allows for easy integration into circuit designs and efficient use of board space.
Depletion mode transistors are normally ON devices, making them suitable for specific applications requiring continuous current flow.
With a maximum drain current of 0.012 A, this transistor can handle moderate current loads efficiently.
Having 3 terminals allows for simple and effective connection in circuit designs.
This transistor can dissipate up to 0.25 W of power, ensuring stable operation even under high load conditions.
The small outline package style further enhances space-saving and allows for compact circuit designs.
Junction field-effect transistors offer high input impedance and low output impedance, making them suitable for various applications.
With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, ensuring reliable performance in harsh environments.
Silicon transistors are known for their durability and reliability, making this transistor a long-lasting choice for different applications.
With a fast turn-on time of 80 ns, this transistor can switch quickly, making it suitable for applications requiring rapid response.
The fast turn-off time of 20 ns ensures efficient switching and performance in applications requiring quick response times.
Tin terminal finish provides good solderability and reliability in connection, ensuring stable performance in circuit applications.
With a low drain-source on resistance of 30 ohms, this transistor exhibits low power loss and high efficiency in switching applications.
Having dual terminal positions allows for flexible connections in circuit designs, enhancing versatility and ease of use.
The maximum time allowed at peak reflow temperature ensures that the transistor can withstand the reflow process without compromising its performance.
With a peak reflow temperature of 260°C, this transistor can undergo solder reflow processes effectively, ensuring reliable connections.
The low feedback capacitance of 3.5 pF minimizes signal distortion and enhances performance in high-frequency applications.
Small Signal Field Effect Transistors (FET) PMBF4391,215 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Maximum Turn Off Time (toff):
Maximum Turn On Time (ton):
PMBF4391,215 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.21.00
PCN Obsolescence/ EOL - Mult Dev EOL 6/Jun/2020
PCN Design/Specification - Resin Hardener 02/Jul/2013
PCN Packaging - All Dev Label Update 15/Dec/2020 Lighter Reels 02/Jan/2014
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
LM358M
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
1N4148
Taiwan Semiconductor
RECTIFIER DIODE; Surface Mount: NO; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 175 Cel; JESD-609 Code: e3; No. of Elements: 1;
LL4148
Secos
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
NE555D
STMicroelectronics
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
1N4148WS
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Central Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Bytesonic Electronics
LM358DR2G
Onsemi
LM358DR2G by Onsemi is a dual operational amplifier with 7000uV max input offset voltage and 70dB nominal CMRR. Ideal for applications requiring low bias current such as sensor interfaces, signal conditioning circuits, and audio amplifiers. Package style: Small Outline, Technology: Bipolar, Unity Gain Bandwidth: 1000 kHz.
BAV99
Panasonic
MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Kingwell Technonlogy
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/56-351
Defense Logistics Agency
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Mating Contacts: M39029/58-363; Removal Tool Sources: MILITARY; Alternate Contact Sources: MILITARY;
SS14
Zowie Technology
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: 30 A;
LM358MX
Texas Instruments
LM358MX by Texas Instruments is a dual operational amplifier with a max input offset voltage of 9000 uV. It has a nominal voltage of 5V and a min voltage gain of 15000. This op amp is commonly used in applications requiring amplification and signal conditioning.
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
AB26TRB-32.768KHZ--T
Abracon
AB26TRB-32.768KHZ--T by Abracon is a crystal oscillator with 20 ppm frequency tolerance, 126% stability, and 35000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency in surface mount configurations.
MBR130T1G
MBR130T1G by Onsemi is a Schottky rectifier diode with max output current of 1A and max repetitive peak reverse voltage of 30V. It operates b/w -65 to 125°C, suitable for surface mount applications in electronics requiring low forward voltage drop.
Leshan Radio
Sangdest Microelectronics (Nanjing)
Infineon Technologies
BSS138
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NX3008NBK,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -50 Cel; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
BSS139IXTSA1
Small Signal Field-Effect Transistors;
FDMC8030
FDMC8030 by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features 40V DS Breakdown Voltage, 50A Max Pulsed Drain Current, and 21mJ Avalanche Energy Rating. With a SQUARE package shape and NO LEAD terminals, it operates in ENHANCEMENT MODE with a max power dissipation of 14W at 150°C.
2N7000TA
Calogic
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: ROUND; Transistor Application: SWITCHING; Maximum Drain Current (ID): .2 A;
2N7000BU
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE;
2N7002H6327XTSA2
2N7002H6327XTSA2 by Infineon Technologies is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 0.3A ID and 3ohm RDS(on). Operating in ENHANCEMENT MODE, it features a built-in DIODE and operates up to 150°C.
SI2319DDS-T1-GE3
Vishay Intertechnology
SI2319DDS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 3.6A Drain Current, and 0.075ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it operates b/w -55 to 150 °C in a SMALL OUTLINE package.
FDS9435A
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-G8;
2N7002DWS-7
Diodes Inc. 2N7002DWS-7 is a N-channel FET with 60V DS breakdown voltage, 0.247A max drain current, and 4 ohm max on resistance. Ideal for switching applications in small outline packages, it operates from -55 to 150°C with MIL-STD-202 compliance.
2N7002K
Hy Electronic
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Additional Features: ULTRA LOW RESISTANCE; Package Body Material: PLASTIC/EPOXY;
IRLML2502GTRPBF
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Pulsed Drain Current (IDM): 33 A; JESD-609 Code: e3; Qualification: Not Qualified;
NX3008NBKS,115
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Minimum Operating Temperature: -50 Cel; Transistor Application: SWITCHING;
BSS138K
Lite-on Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 10 ohm; Transistor Application: SWITCHING; No. of Terminals: 3;
2N7002-7-F
Diodes Inc. 2N7002-7-F is a N-channel FET with 60V DS breakdown voltage, 0.115A max drain current, and 13.5 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features Gull Wing terminals, small outline package style, and operates up to 150°C.
MMBF170LT1G
Rochester Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;
ZVP3310FTA
Zetex Plc
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-G3; No. of Terminals: 3;
ZVP2106ASTZ
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 60 V; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;
SI4816BDY-T1-E3
SI4816BDY-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET with 2 SERIES CONNECTED elements. It has a Max Drain Current of 5.8A and Min DS Breakdown Voltage of 30V. Ideal for applications requiring high drain current in small outline packages, operating b/w -55 to 150°C.
FDG6301N
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Position: DUAL; Package Shape: RECTANGULAR;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
PMBF170,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .3 A; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
NXP Semiconductors
The NXP Semiconductors PMBF170,215 is a small signal N-CHANNEL FET with built-in diode for switching applications. It features a 60V DS breakdown voltage, 0.25A max drain current, and 5 ohm max on resistance. This enhancement mode transistor operates at up to 150°C and comes in a small outline package suitable for surface mount assembly.
PMBF4393,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Peak Reflow Temperature (C): 260; No. of Elements: 1;
PMBFJ109,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JEDEC-95 Code: TO-236AB; Maximum Operating Temperature: 150 Cel;
PMBFJ112,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; No. of Elements: 1; Terminal Form: GULL WING;
PMBFJ177,215
PMBFJ177,215 by NXP Semiconductors is a P-CHANNEL small signal FET with a min DS breakdown voltage of 30V. It is used for switching applications and operates in depletion mode. This surface mount transistor has a max power dissipation of 0.3W and can withstand temperatures up to 150°C.
PMBFJ109
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e3; Package Shape: RECTANGULAR;
Philips Components
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Transistor Element Material: SILICON; No. of Elements: 1;
PMBFJ109T/R
PMBFJ109T/R by NXP Semiconductors is a small signal N-CHANNEL FET for switching applications. It features a min DS Breakdown Voltage of 25V, Max Power Dissipation of 0.25W, and Max Operating Temperature of 150°C. With a DEPLETION MODE operating mode, this transistor is ideal for surface mount applications requiring low drain-source resistance.
PMBF170,235
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE;
The NXP Semiconductors PMBF170,235 is a small signal N-channel FET with a 60V breakdown voltage and 0.25A drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.
PMBFJ108,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Minimum DS Breakdown Voltage: 25 V; Moisture Sensitivity Level (MSL): 1;
PMBFJ112
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; Transistor Element Material: SILICON; Field Effect Transistor Technology: JUNCTION;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e3; Qualification: Not Qualified;
PMBF107TRL13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Maximum Drain-Source On Resistance: 28 ohm; Package Body Material: PLASTIC/EPOXY;
PMBF107-TAPE-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;
PMBF170/T1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .3 A; JESD-30 Code: R-PDSO-G3; No. of Terminals: 3;
PMBF170-TAPE-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;
PMBF107
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Minimum DS Breakdown Voltage: 200 V; JESD-30 Code: R-PDSO-G3;
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