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PMBF4391,215

NXP Semiconductors

PMBF4391,215 by NXP Semiconductors

NXP Semiconductors' PMBF4391,215 is a N-CHANNEL FET with 40V DS breakdown voltage. Ideal for switching applications, it features a single configuration with built-in diode and operates in depletion mode. With a max drain current of 0.012A and small outline package style, it offers fast turn on/off times of 80ns/20ns.

Median Price

$0.188

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 15 parts In-Stock

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Vyrian

USA . 6,392 parts In-Stock

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Digiode

USA . 4,856 parts In-Stock

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Anansix

USA . 1,740 parts In-Stock

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Distributors (Availability)

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Argo Parts USA

USA . 3,728 parts In-Stock

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$0.188

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$0.182

3,728

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Continental Prestige Electronics

USA . 3,270 parts In-Stock

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$0.188

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$0.184

3,270

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Bastille Electronics

Australia . 120 parts In-Stock

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$0.188

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$0.179

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$0.170

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$0.167

120

$0.188

$0.179

$0.170

$0.167

AZTECH Wire

Italy . 237 parts In-Stock

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$11.295

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One Stop Electronics

USA . 690 parts In-Stock

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$24.050

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$24.050

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Ampacity Inc.

Singapore . 282 parts In-Stock

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$36.050

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Semicontronic

India . 442 parts In-Stock

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$64.050

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$62.449

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$62.128

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QUARKTWIN TECHNOLOGY LTD

USA . 18,837 parts In-Stock

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Perfect Parts

USA . 6,614 parts In-Stock

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UNI Independent Distributors

Spain . 5,372 parts In-Stock

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Corphita

USA . 1,444 parts In-Stock

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Microchip USA

USA . 269 parts In-Stock

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Overview

Upgrade your electronic devices with the PMBF4391,215 by NXP Semiconductors. This high-quality Small Signal Field Effect Transistor offers unmatched performance and reliability. Ideal for switching applications, this N-CHANNEL transistor with a built-in diode provides seamless operation. With a maximum power dissipation of 0.25W and a minimum DS breakdown voltage of 40V, this transistor ensures efficient functionality. Trust NXP Semiconductors to deliver cutting-edge technology that enhances your products' performance. Elevate your designs with the PMBF4391,215 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good protection and insulation for the transistor, ensuring reliable performance in various environments.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and conductivity, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more versatile functionality in switching applications where reverse voltage protection is needed.

Transistor Application: SWITCHING

This transistor is specifically designed for switching applications, making it reliable and efficient in controlling electrical circuits.

Surface Mount: YES

Being surface mountable, this transistor is easy to install on circuit boards, saving space and allowing for high-density layouts.

Minimum DS Breakdown Voltage: 40 V

With a high breakdown voltage, this transistor can handle higher voltages safely, increasing its versatility in various applications.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy integration into circuit designs and efficient use of board space.

Operating Mode: DEPLETION MODE

Depletion mode transistors are normally ON devices, making them suitable for specific applications requiring continuous current flow.

Maximum Drain Current (Abs): 0.012 A

With a maximum drain current of 0.012 A, this transistor can handle moderate current loads efficiently.

No. of Terminals: 3

Having 3 terminals allows for simple and effective connection in circuit designs.

Maximum Power Dissipation (Abs): 0.25 W

This transistor can dissipate up to 0.25 W of power, ensuring stable operation even under high load conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style further enhances space-saving and allows for compact circuit designs.

Field Effect Transistor Technology: JUNCTION

Junction field-effect transistors offer high input impedance and low output impedance, making them suitable for various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, ensuring reliable performance in harsh environments.

Transistor Element Material: SILICON

Silicon transistors are known for their durability and reliability, making this transistor a long-lasting choice for different applications.

Maximum Turn On Time (ton): 80 ns

With a fast turn-on time of 80 ns, this transistor can switch quickly, making it suitable for applications requiring rapid response.

Maximum Turn Off Time (toff): 20 ns

The fast turn-off time of 20 ns ensures efficient switching and performance in applications requiring quick response times.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good solderability and reliability in connection, ensuring stable performance in circuit applications.

Maximum Drain-Source On Resistance: 30 ohm

With a low drain-source on resistance of 30 ohms, this transistor exhibits low power loss and high efficiency in switching applications.

Terminal Position: DUAL

Having dual terminal positions allows for flexible connections in circuit designs, enhancing versatility and ease of use.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time allowed at peak reflow temperature ensures that the transistor can withstand the reflow process without compromising its performance.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can undergo solder reflow processes effectively, ensuring reliable connections.

Maximum Feedback Capacitance (Crss): 3.5 pF

The low feedback capacitance of 3.5 pF minimizes signal distortion and enhances performance in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) PMBF4391,215 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

.012 A

Maximum Drain Current (ID):

.012 A

Maximum Drain-Source On Resistance:

30 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

3.5 pF

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

20 ns

Maximum Turn On Time (ton):

80 ns

Trade Compliance

PMBF4391,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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