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PMBFJ109

NXP Semiconductors

PMBFJ109 by NXP Semiconductors

The NXP Semiconductors PMBFJ109 is a small signal N-channel FET for switching applications. It features a max power dissipation of 0.25W, operating in depletion mode with a drain-source resistance of 12 ohms. With a peak reflow temperature of 260°C, it offers low feedback capacitance at 15pF for efficient performance in various electronic circuits.

Median Price

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Lifecycle Status

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6

In-Stock Inventory

1k+

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Bristol Electronics

USA . 3,000 parts In-Stock

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Vyrian

USA . 2,093 parts In-Stock

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Digiode

USA . 1,197 parts In-Stock

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Anansix

USA . 819 parts In-Stock

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J2 Sourcing AB

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Nova Conductors

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Aztec Data Supply Inc.

USA . 3,314 parts In-Stock

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$1.240

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Corohmni

South Africa . 226 parts In-Stock

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AZTECH Wire

Italy . 385 parts In-Stock

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$12.114

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One Stop Electronics

USA . 489 parts In-Stock

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$47.050

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Kepictronics

USA . 54,000 parts In-Stock

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A-Z Elektronik GmbH

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Corphita

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Lixinc

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Continental Prestige Electronics

USA . 3,070 parts In-Stock

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Argo Parts USA

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UNI Independent Distributors

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Upgrade your electronics with the PMBFJ109 from NXP Semiconductors. This small signal Field Effect Transistor (FET) offers high-quality performance in switching applications, making it a versatile choice for various projects. With N-CHANNEL polarity and DEPLETION MODE operating mode, this transistor provides reliable power dissipation and resistance. Trust in NXP's reputation for excellence in semiconductor manufacturing and unlock the potential of your devices with the PMBFJ109.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of environments.

Polarity or Channel Type: N-CHANNEL

Allows for easy integration with other N-channel components in a circuit.

Configuration: SINGLE

Simplified circuit design and installation process.

Transistor Application: SWITCHING

Efficiently handles switching operations in electronic circuits.

Surface Mount: YES

Easy and convenient installation on PCBs.

Package Shape: RECTANGULAR

Space-saving design for compact electronic devices.

Terminal Form: GULL WING

Facilitates easy soldering and connection to PCB.

Operating Mode: DEPLETION MODE

Provides more control and precision in circuit operation.

Maximum Power Dissipation (Abs): 0.25 W

Suitable for low to moderate power applications.

Package Style (Meter): SMALL OUTLINE

Ideal for applications where space is limited.

Field Effect Transistor Technology: JUNCTION

Ensures high performance and reliability.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various applications.

Transistor Element Material: SILICON

Provides excellent electrical properties and reliability.

Terminal Finish: TIN

Enhances solderability and ensures a secure connection.

Maximum Drain-Source On Resistance: 12 ohm

Low resistance for efficient current flow.

Terminal Position: DUAL

Allows for easy connection and integration in circuits.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper reflow soldering for reliable performance.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures for assembly processes.

Maximum Feedback Capacitance (Crss): 15 pF

Low feedback capacitance for improved signal integrity.

Technical Specifications

Small Signal Field Effect Transistors (FET) PMBFJ109 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain-Source On Resistance:

12 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

15 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PMBFJ109 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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