Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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2SK3813-Z-E1-AZ
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 84 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
SINGLE
60 A
METAL-OXIDE SEMICONDUCTOR
1
150 Cel
NOT SPECIFIED
N-CHANNEL
84 W
FET General Purpose Power
YES
UPA1804GR-9JG-E1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 8 A; No. of Elements: 1;
8 A
e6
2 W
TIN BISMUTH
UPA1815GR-9JG-E1-A
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: TIN BISMUTH; No. of Elements: 1;
7 A
P-CHANNEL
Other Transistors
MCH3477-TL-E
Onsemi
MCH3477-TL-E by Onsemi is a N-CHANNEL FET with 4.5A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates up to 150 °C making it suitable for various electronic circuits requiring high power handling in compact designs.
4.5 A
1 W
Tin/Bismuth (Sn/Bi)
2SJ325-AY
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
4 A
20 W
NO
2SJ325-Z-AY
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
2SJ325-Z-E1-AZ
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 4 A;
2N5460G
2N5460G by Onsemi is a P-CHANNEL FET with a max power dissipation of 0.35W. Ideal for amplifier applications, it operates in depletion mode with 3 terminals and a peak reflow temperature of 260°C. The transistor features a feedback capacitance of 2pF and is housed in a cylindrical package made of plastic/epoxy material.
JUNCTION
2 pF
TO-92
O-PBCY-T3
e1
3
DEPLETION MODE
135 Cel
PLASTIC/EPOXY
ROUND
CYLINDRICAL
260
.35 W
Not Qualified
FET General Purpose Small Signal
Tin/Silver/Copper (Sn/Ag/Cu)
THROUGH-HOLE
BOTTOM
40
AMPLIFIER
SILICON
BFR30LT1G
BFR30LT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features DEPLETION MODE operation, GULL WING terminals, and 1.5pF Crss feedback capacitance. The transistor has a max power dissipation of 0.3W and can operate at temperatures up to 150°C.
25 V
1.5 pF
TO-236AB
R-PDSO-G3
e3
RECTANGULAR
SMALL OUTLINE
.3 W
Tin (Sn)
GULL WING
DUAL
MMBF5460LT1G
MMBF5460LT1G by Onsemi is a P-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max temp of 150 °C and feedback capacitance of 2pF. Ideal for AMPLIFIER applications due to its small outline package and SILICON material technology.
TIN
30
BFR31LT1G
BFR31LT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features GULL WING terminals, operates in DEPLETION MODE, and has a max power dissipation of 0.3W. This SMALL OUTLINE transistor has a peak reflow temperature of 260°C and feedback capacitance of 1.5pF.
J110G
J110G by Onsemi is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a Max Power Dissipation of 0.31W and Max Drain-Source On Resistance of 18Ω. Ideal for SWITCHING applications due to its high feedback capacitance and low on resistance.
18 ohm
15 pF
.31 W
TIN SILVER COPPER
SWITCHING
MMBF5457LT1G
MMBF5457LT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features DEPLETION MODE operation, GULL WING terminals, and 3pF Crss. With a max power dissipation of 0.225W and operating temperature up to 150°C, it is suitable for small outline packages in electronic circuits.
3 pF
.225 W
2N5457G
2N5457G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for SWITCHING applications, it operates in DEPLETION MODE with 3 terminals and 0.31W power dissipation. With a max operating temperature of 150°C, it features a feedback capacitance of 3pF and uses Tin/Silver/Copper terminal finish.
LOW NOISE
2N5638RLRAG
2N5638RLRAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 30 ohm Max RDS. Ideal for SWITCHING applications, it operates in DEPLETION MODE with 0.31W Power Dissipation. Its ROUND package style and SILICON material make it suitable for various electronic circuits.
30 V
30 ohm
4 pF
TO-226AA
2N5639RLRAG
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; JESD-609 Code: e1; No. of Terminals: 3;
60 ohm
BSR58LT1G
BSR58LT1G by Onsemi is a N-CHANNEL FET with 3 terminals in a small outline package. Operating in depletion mode, it has a max power dissipation of 0.35W and drain-source resistance of 60 ohm. Ideal for chopper applications, this transistor can withstand up to 150°C operating temperature.
5 pF
CHOPPER
J110RLRAG
Onsemi's J110RLRAG is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 0.31W and a max drain-source on resistance of 18 ohm. Ideal for SWITCHING applications due to its high feedback capacitance of 15pF and peak reflow temperature of 260°C.
J111RL1G
J111RL1G by Onsemi is a N-CHANNEL FET with 3 terminals and 0.35W power dissipation. Ideal for chopper applications, it operates in depletion mode with max temp of 150 °C. Featuring a max on resistance of 30 ohm, it has a feedback capacitance of 5pF and uses silicon as the transistor element material.
EUROPEAN PART NUMBER
J111RLRAG
J111RLRAG by Onsemi is a N-CHANNEL FET with 3 terminals and 0.35W power dissipation. Ideal for CHOPPER applications, it operates in DEPLETION MODE at up to 150 °C. Featuring a max on resistance of 30Ω, this transistor has a cylindrical package style suitable for various electronic designs.
J111RLRPG
J111RLRPG by Onsemi is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 0.35W and a max drain-source on resistance of 30 ohm. Ideal for CHOPPER applications due to its SILICON element material and low feedback capacitance of 5pF.
J112G
J112G by Onsemi is a N-CHANNEL FET with 3 terminals in a ROUND package. Operating in DEPLETION MODE, it has a max power dissipation of 0.4W and max drain-source resistance of 50 ohm. Ideal for CHOPPER applications due to its low feedback capacitance of 5pF and temp rating up to 150 °C.
50 ohm
.4 W
J112RL1G
J112RL1G by Onsemi is a N-CHANNEL FET with 3 terminals and 0.4W power dissipation. Ideal for chopper applications, it operates in depletion mode with max drain-source resistance of 50 ohm. Its cylindrical package body is made of plastic/epoxy material.
J112RLRAG
J112RLRAG by Onsemi is a N-CHANNEL FET with 3 terminals and 0.4W power dissipation. Ideal for chopper applications, it operates in depletion mode with max temp of 150 °C. Featuring a max drain-source resistance of 50 ohm, this transistor has a cylindrical package shape.
MPF4392G
MPF4392G by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 60 ohm Drain-Source On Resistance, and 3.5pF Feedback Capacitance. With a max power dissipation of 0.625W and operating temperature of 150 °C, it is ideal for DEPLETION MODE operation in various electronic circuits.
3.5 pF
.625 W
MPF4393G
The Onsemi MPF4393G is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 100 ohm Drain-Source On Resistance, and 3.5pF Feedback Capacitance. This SINGLE configuration transistor operates in DEPLETION MODE with a max power dissipation of 0.625W at 150 °C.
100 ohm
NTMFS4C05NT1G-001
NTMFS4C05NT1G-001 by Onsemi is a N-channel FET with 78A max drain current and 33W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Suitable for surface mount configurations in various electronic devices.
78 A
33 W
NTMFS4C06NT1G-001
NTMFS4C06NT1G-001 by Onsemi is a N-CHANNEL FET with 69A max drain current and 30.5W power dissipation. Ideal for high-power applications, it operates up to 150 °C, making it suitable for various surface-mount designs.
69 A
30.5 W
NTMFS4C08NT1G-001
NTMFS4C08NT1G-001 by Onsemi is a N-channel FET with 52A max drain current and 25.5W power dissipation. Ideal for high-power applications, it operates at up to 150°C. Suitable for surface mount designs, this MOSFET offers reliable performance in various electronic circuits.
52 A
25.5 W
NTMFS4C10NT1G-001
NTMFS4C10NT1G-001 by Onsemi is a N-CHANNEL FET with 46A max drain current and 23.6W power dissipation. Ideal for high-power applications, it operates up to 150°C, making it suitable for various surface-mount designs.
46 A
23.6 W
SFT1341-TL-W
The Onsemi SFT1341-TL-W is a P-CHANNEL FET with 10A max drain current and 15W max power dissipation. Ideal for applications requiring high temperature resistance up to 150 °C, such as automotive electronics and industrial control systems.
10 A
15 W
SFT1341-W
The Onsemi SFT1341-W is a P-CHANNEL FET with 10A max drain current and 15W max power dissipation. Ideal for applications requiring high power handling in temperatures up to 150 °C, such as power management circuits or motor control systems.
SFT1342-TL-W
The Onsemi SFT1342-TL-W is a P-CHANNEL FET with 12A max drain current and 15W power dissipation. Ideal for surface mount applications, it operates up to 150°C and features metal-oxide semiconductor technology. Suitable for various electronic circuits requiring high-power handling in compact designs.
12 A
SFT1342-W
The Onsemi SFT1342-W is a P-CHANNEL FET with 12A max drain current and 15W power dissipation. Ideal for applications requiring high power handling in temperatures up to 150°C, it features metal-oxide semiconductor technology and tin bismuth terminal finish.
MCH3486-TL-W
MCH3486-TL-W by Onsemi is a N-CHANNEL FET with 2A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates up to 150 °C and features metal-oxide semiconductor technology. Suitable for various electronic circuits requiring high-performance transistors.
2 A
2SK2963(TE12L,F)
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 1 A;
1 A
1.5 W
DMG7401SFGQ-13
Diodes Incorporated
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
HIGH RELIABILITY
DRAIN
9.8 A
.011 ohm
391 pF
R-PDSO-N5
5
ENHANCEMENT MODE
-55 Cel
2.2 W
AEC-Q101
MATTE TIN
NO LEAD
DMG7401SFGQ-7
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; JESD-30 Code: R-PDSO-N5; Transistor Application: SWITCHING;
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