Loading...

SINGLE Small Signal Field Effect Transistors (FET) 134

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2SK3813-Z-E1-AZ by Renesas Electronics

2SK3813-Z-E1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 84 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;

SINGLE

60 A

60 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

84 W

FET General Purpose Power

YES

NOT SPECIFIED

UPA1804GR-9JG-E1-A by Renesas Electronics

UPA1804GR-9JG-E1-A

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 8 A; No. of Elements: 1;

SINGLE

8 A

8 A

METAL-OXIDE SEMICONDUCTOR

e6

1

150 Cel

N-CHANNEL

2 W

FET General Purpose Power

YES

TIN BISMUTH

UPA1815GR-9JG-E1-A by Renesas Electronics

UPA1815GR-9JG-E1-A

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: TIN BISMUTH; No. of Elements: 1;

SINGLE

7 A

7 A

METAL-OXIDE SEMICONDUCTOR

e6

1

150 Cel

P-CHANNEL

2 W

Other Transistors

YES

TIN BISMUTH

MCH3477-TL-E by Onsemi

MCH3477-TL-E

Onsemi

MCH3477-TL-E by Onsemi is a N-CHANNEL FET with 4.5A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates up to 150 °C making it suitable for various electronic circuits requiring high power handling in compact designs.

SINGLE

4.5 A

4.5 A

METAL-OXIDE SEMICONDUCTOR

e6

1

1

150 Cel

N-CHANNEL

1 W

FET General Purpose Power

YES

Tin/Bismuth (Sn/Bi)

2SJ325-AY by Renesas Electronics

2SJ325-AY

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

P-CHANNEL

20 W

Other Transistors

NO

NOT SPECIFIED

2SJ325-Z-AY by Renesas Electronics

2SJ325-Z-AY

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;

SINGLE

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

P-CHANNEL

20 W

Other Transistors

YES

NOT SPECIFIED

2SJ325-Z-E1-AZ by Renesas Electronics

2SJ325-Z-E1-AZ

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 4 A;

SINGLE

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

P-CHANNEL

20 W

Other Transistors

YES

NOT SPECIFIED

2N5460G by Onsemi

2N5460G

Onsemi

2N5460G by Onsemi is a P-CHANNEL FET with a max power dissipation of 0.35W. Ideal for amplifier applications, it operates in depletion mode with 3 terminals and a peak reflow temperature of 260°C. The transistor features a feedback capacitance of 2pF and is housed in a cylindrical package made of plastic/epoxy material.

SINGLE

JUNCTION

2 pF

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

135 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

P-CHANNEL

.35 W

Not Qualified

FET General Purpose Small Signal

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

AMPLIFIER

SILICON

BFR30LT1G by Onsemi

BFR30LT1G

Onsemi

BFR30LT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features DEPLETION MODE operation, GULL WING terminals, and 1.5pF Crss feedback capacitance. The transistor has a max power dissipation of 0.3W and can operate at temperatures up to 150°C.

SINGLE

25 V

JUNCTION

1.5 pF

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.3 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

40

AMPLIFIER

SILICON

MMBF5460LT1G by Onsemi

MMBF5460LT1G

Onsemi

MMBF5460LT1G by Onsemi is a P-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max temp of 150 °C and feedback capacitance of 2pF. Ideal for AMPLIFIER applications due to its small outline package and SILICON material technology.

SINGLE

JUNCTION

2 pF

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

Not Qualified

FET General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BFR31LT1G by Onsemi

BFR31LT1G

Onsemi

BFR31LT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features GULL WING terminals, operates in DEPLETION MODE, and has a max power dissipation of 0.3W. This SMALL OUTLINE transistor has a peak reflow temperature of 260°C and feedback capacitance of 1.5pF.

SINGLE

25 V

JUNCTION

1.5 pF

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.3 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

40

AMPLIFIER

SILICON

J110G by Onsemi

J110G

Onsemi

J110G by Onsemi is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a Max Power Dissipation of 0.31W and Max Drain-Source On Resistance of 18Ω. Ideal for SWITCHING applications due to its high feedback capacitance and low on resistance.

SINGLE

18 ohm

JUNCTION

15 pF

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

135 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.31 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

MMBF5457LT1G by Onsemi

MMBF5457LT1G

Onsemi

MMBF5457LT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features DEPLETION MODE operation, GULL WING terminals, and 3pF Crss. With a max power dissipation of 0.225W and operating temperature up to 150°C, it is suitable for small outline packages in electronic circuits.

SINGLE

25 V

JUNCTION

3 pF

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.225 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

2N5457G by Onsemi

2N5457G

Onsemi

2N5457G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for SWITCHING applications, it operates in DEPLETION MODE with 3 terminals and 0.31W power dissipation. With a max operating temperature of 150°C, it features a feedback capacitance of 3pF and uses Tin/Silver/Copper terminal finish.

LOW NOISE

SINGLE

25 V

JUNCTION

3 pF

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.31 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

2N5638RLRAG by Onsemi

2N5638RLRAG

Onsemi

2N5638RLRAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 30 ohm Max RDS. Ideal for SWITCHING applications, it operates in DEPLETION MODE with 0.31W Power Dissipation. Its ROUND package style and SILICON material make it suitable for various electronic circuits.

SINGLE

30 V

30 ohm

JUNCTION

4 pF

TO-226AA

O-PBCY-T3

e1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.31 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

2N5639RLRAG by Onsemi

2N5639RLRAG

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; JESD-609 Code: e1; No. of Terminals: 3;

SINGLE

30 V

60 ohm

JUNCTION

4 pF

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.31 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

BSR58LT1G by Onsemi

BSR58LT1G

Onsemi

BSR58LT1G by Onsemi is a N-CHANNEL FET with 3 terminals in a small outline package. Operating in depletion mode, it has a max power dissipation of 0.35W and drain-source resistance of 60 ohm. Ideal for chopper applications, this transistor can withstand up to 150°C operating temperature.

SINGLE

60 ohm

JUNCTION

5 pF

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.35 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

CHOPPER

SILICON

J110RLRAG by Onsemi

J110RLRAG

Onsemi

Onsemi's J110RLRAG is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 0.31W and a max drain-source on resistance of 18 ohm. Ideal for SWITCHING applications due to its high feedback capacitance of 15pF and peak reflow temperature of 260°C.

SINGLE

18 ohm

JUNCTION

15 pF

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

135 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.31 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

J111RL1G by Onsemi

J111RL1G

Onsemi

J111RL1G by Onsemi is a N-CHANNEL FET with 3 terminals and 0.35W power dissipation. Ideal for chopper applications, it operates in depletion mode with max temp of 150 °C. Featuring a max on resistance of 30 ohm, it has a feedback capacitance of 5pF and uses silicon as the transistor element material.

EUROPEAN PART NUMBER

SINGLE

30 ohm

JUNCTION

5 pF

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.35 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

CHOPPER

SILICON

J111RLRAG by Onsemi

J111RLRAG

Onsemi

J111RLRAG by Onsemi is a N-CHANNEL FET with 3 terminals and 0.35W power dissipation. Ideal for CHOPPER applications, it operates in DEPLETION MODE at up to 150 °C. Featuring a max on resistance of 30Ω, this transistor has a cylindrical package style suitable for various electronic designs.

SINGLE

30 ohm

JUNCTION

5 pF

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.35 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

CHOPPER

SILICON

J111RLRPG by Onsemi

J111RLRPG

Onsemi

J111RLRPG by Onsemi is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 0.35W and a max drain-source on resistance of 30 ohm. Ideal for CHOPPER applications due to its SILICON element material and low feedback capacitance of 5pF.

SINGLE

30 ohm

JUNCTION

5 pF

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.35 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

CHOPPER

SILICON

J112G by Onsemi

J112G

Onsemi

J112G by Onsemi is a N-CHANNEL FET with 3 terminals in a ROUND package. Operating in DEPLETION MODE, it has a max power dissipation of 0.4W and max drain-source resistance of 50 ohm. Ideal for CHOPPER applications due to its low feedback capacitance of 5pF and temp rating up to 150 °C.

SINGLE

50 ohm

JUNCTION

5 pF

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.4 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

CHOPPER

SILICON

J112RL1G by Onsemi

J112RL1G

Onsemi

J112RL1G by Onsemi is a N-CHANNEL FET with 3 terminals and 0.4W power dissipation. Ideal for chopper applications, it operates in depletion mode with max drain-source resistance of 50 ohm. Its cylindrical package body is made of plastic/epoxy material.

EUROPEAN PART NUMBER

SINGLE

50 ohm

JUNCTION

5 pF

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.4 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

CHOPPER

SILICON

J112RLRAG by Onsemi

J112RLRAG

Onsemi

J112RLRAG by Onsemi is a N-CHANNEL FET with 3 terminals and 0.4W power dissipation. Ideal for chopper applications, it operates in depletion mode with max temp of 150 °C. Featuring a max drain-source resistance of 50 ohm, this transistor has a cylindrical package shape.

SINGLE

50 ohm

JUNCTION

5 pF

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.4 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

CHOPPER

SILICON

MPF4392G by Onsemi

MPF4392G

Onsemi

MPF4392G by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 60 ohm Drain-Source On Resistance, and 3.5pF Feedback Capacitance. With a max power dissipation of 0.625W and operating temperature of 150 °C, it is ideal for DEPLETION MODE operation in various electronic circuits.

SINGLE

30 V

60 ohm

JUNCTION

3.5 pF

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.625 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

MPF4393G by Onsemi

MPF4393G

Onsemi

The Onsemi MPF4393G is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 100 ohm Drain-Source On Resistance, and 3.5pF Feedback Capacitance. This SINGLE configuration transistor operates in DEPLETION MODE with a max power dissipation of 0.625W at 150 °C.

SINGLE

30 V

100 ohm

JUNCTION

3.5 pF

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.625 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

NTMFS4C05NT1G-001 by Onsemi

NTMFS4C05NT1G-001

Onsemi

NTMFS4C05NT1G-001 by Onsemi is a N-channel FET with 78A max drain current and 33W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Suitable for surface mount configurations in various electronic devices.

SINGLE

78 A

78 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

N-CHANNEL

33 W

FET General Purpose Power

YES

NTMFS4C06NT1G-001 by Onsemi

NTMFS4C06NT1G-001

Onsemi

NTMFS4C06NT1G-001 by Onsemi is a N-CHANNEL FET with 69A max drain current and 30.5W power dissipation. Ideal for high-power applications, it operates up to 150 °C, making it suitable for various surface-mount designs.

SINGLE

69 A

69 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

N-CHANNEL

30.5 W

FET General Purpose Power

YES

NTMFS4C08NT1G-001 by Onsemi

NTMFS4C08NT1G-001

Onsemi

NTMFS4C08NT1G-001 by Onsemi is a N-channel FET with 52A max drain current and 25.5W power dissipation. Ideal for high-power applications, it operates at up to 150°C. Suitable for surface mount designs, this MOSFET offers reliable performance in various electronic circuits.

SINGLE

52 A

52 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

N-CHANNEL

25.5 W

FET General Purpose Power

YES

NTMFS4C10NT1G-001 by Onsemi

NTMFS4C10NT1G-001

Onsemi

NTMFS4C10NT1G-001 by Onsemi is a N-CHANNEL FET with 46A max drain current and 23.6W power dissipation. Ideal for high-power applications, it operates up to 150°C, making it suitable for various surface-mount designs.

SINGLE

46 A

46 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

N-CHANNEL

23.6 W

FET General Purpose Power

YES

SFT1341-TL-W by Onsemi

SFT1341-TL-W

Onsemi

The Onsemi SFT1341-TL-W is a P-CHANNEL FET with 10A max drain current and 15W max power dissipation. Ideal for applications requiring high temperature resistance up to 150 °C, such as automotive electronics and industrial control systems.

SINGLE

10 A

10 A

METAL-OXIDE SEMICONDUCTOR

e6

1

1

150 Cel

260

P-CHANNEL

15 W

Other Transistors

YES

TIN BISMUTH

30

SFT1341-W by Onsemi

SFT1341-W

Onsemi

The Onsemi SFT1341-W is a P-CHANNEL FET with 10A max drain current and 15W max power dissipation. Ideal for applications requiring high power handling in temperatures up to 150 °C, such as power management circuits or motor control systems.

SINGLE

10 A

10 A

METAL-OXIDE SEMICONDUCTOR

e6

1

150 Cel

P-CHANNEL

15 W

Other Transistors

NO

Tin/Bismuth (Sn/Bi)

SFT1342-TL-W by Onsemi

SFT1342-TL-W

Onsemi

The Onsemi SFT1342-TL-W is a P-CHANNEL FET with 12A max drain current and 15W power dissipation. Ideal for surface mount applications, it operates up to 150°C and features metal-oxide semiconductor technology. Suitable for various electronic circuits requiring high-power handling in compact designs.

SINGLE

12 A

12 A

METAL-OXIDE SEMICONDUCTOR

e6

1

1

150 Cel

260

P-CHANNEL

15 W

Other Transistors

YES

TIN BISMUTH

30

SFT1342-W by Onsemi

SFT1342-W

Onsemi

The Onsemi SFT1342-W is a P-CHANNEL FET with 12A max drain current and 15W power dissipation. Ideal for applications requiring high power handling in temperatures up to 150°C, it features metal-oxide semiconductor technology and tin bismuth terminal finish.

SINGLE

12 A

12 A

METAL-OXIDE SEMICONDUCTOR

e6

1

150 Cel

P-CHANNEL

15 W

Other Transistors

NO

TIN BISMUTH

MCH3486-TL-W by Onsemi

MCH3486-TL-W

Onsemi

MCH3486-TL-W by Onsemi is a N-CHANNEL FET with 2A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates up to 150 °C and features metal-oxide semiconductor technology. Suitable for various electronic circuits requiring high-performance transistors.

SINGLE

2 A

2 A

METAL-OXIDE SEMICONDUCTOR

e6

1

1

150 Cel

260

N-CHANNEL

1 W

FET General Purpose Power

YES

TIN BISMUTH

30

2SK2963(TE12L,F) by Toshiba

2SK2963(TE12L,F)

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 1 A;

SINGLE

1 A

1 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

N-CHANNEL

1.5 W

FET General Purpose Power

YES

DMG7401SFGQ-13 by Diodes Incorporated

DMG7401SFGQ-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

HIGH RELIABILITY

DRAIN

SINGLE

30 V

9.8 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

391 pF

R-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.2 W

AEC-Q101

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMG7401SFGQ-7 by Diodes Incorporated

DMG7401SFGQ-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; JESD-30 Code: R-PDSO-N5; Transistor Application: SWITCHING;

HIGH RELIABILITY

DRAIN

SINGLE

30 V

9.8 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

391 pF

R-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.2 W

AEC-Q101

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON