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MCH3486-TL-W

Onsemi

MCH3486-TL-W by Onsemi

MCH3486-TL-W by Onsemi is a N-CHANNEL FET with 2A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates up to 150 °C and features metal-oxide semiconductor technology. Suitable for various electronic circuits requiring high-performance transistors.

Median Price

$1.492

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 11 parts In-Stock

1+ parts

$0.164

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11

$0.164

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DigiKey

USA . 51,000 parts In-Stock

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$2.820

51,000

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$2.820

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 840 parts In-Stock

1+ parts

$0.202

100+ parts

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840

$0.202

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Flip Electronics

USA . 51,000 parts In-Stock

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51,000

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Cyclops Electronics Ltd

UK . 21,000 parts In-Stock

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21,000

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Chip Stock

USA . 9,178 parts In-Stock

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9,178

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Vyrian

USA . 4,750 parts In-Stock

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4,750

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ComSIT Distribution GmbH

Germany . 214 parts In-Stock

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214

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Distributors (Availability)

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Corphita

USA . 2,022 parts In-Stock

1+ parts

$0.192

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2,022

$0.192

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Corohmni

South Africa . 470 parts In-Stock

1+ parts

$0.210

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470

$0.210

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AZTECH Wire

Italy . 1,207 parts In-Stock

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$18.250

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1,207

$18.250

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Kepictronics

USA . 306,000 parts In-Stock

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Perfect Parts

USA . 54,533 parts In-Stock

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ChipstoGo Electronic ltd

UK . 21,000 parts In-Stock

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21,000

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SupplyDigital Components

Austria . 8,300 parts In-Stock

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8,300

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TANS Electronics

Latvia . 7,351 parts In-Stock

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7,351

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Kulean Microsystems

USA . 5,524 parts In-Stock

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5,524

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Problanco Electronics

Mexico . 4,778 parts In-Stock

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4,778

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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UHIMA Technologies

Türkiye . 512 parts In-Stock

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512

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Overview

Enhance your electronic projects with the MCH3486-TL-W by Onsemi! Crafted with precision and expertise by a renowned manufacturer, this Small Signal Field Effect Transistor offers unparalleled performance and reliability. From amplifiers to power management systems, this N-CHANNEL FET is versatile and efficient, operating at a maximum of 2A with a power dissipation of 1W. With its surface mount capability and high operating temperature, this product is a must-have for any electronics enthusiast looking for quality components that deliver exceptional value and benefits. Unlock endless possibilities with the MCH3486-TL-W!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs typically offer lower ON resistance and better efficiency compared to P-CHANNEL FETs, making this product suitable for various applications requiring high performance.

Configuration: SINGLE

Single configuration FETs are easier to integrate into circuits and offer simplicity in design, making them a convenient choice for applications with space constraints.

Surface Mount: YES

Surface mount package allows for easy and compact mounting on circuit boards, providing efficient use of available space in electronic devices.

Maximum Drain Current (ID): 2 A

The high maximum drain current rating of 2A ensures that the FET can handle larger loads, making it suitable for applications requiring high current capabilities.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1W, this FET can effectively dissipate heat generated during operation, ensuring reliable performance and longevity.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high switching speeds and low gate drive requirements, making this FET efficient and suitable for applications where speed is crucial.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this FET can withstand elevated temperatures, making it suitable for applications that operate in demanding environmental conditions.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish provides good solderability and reliability in solder joints, ensuring secure connections and robust performance.

Maximum Time At Peak Reflow Temperature (s): 30

The FET can withstand peak reflow temperatures for up to 30 seconds, making it easy to integrate into SMT assembly processes with precise time constraints.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C allows for reliable solder joint formation during assembly processes, ensuring the longevity and durability of the FET in electronic devices.

Technical Specifications

Small Signal Field Effect Transistors (FET) MCH3486-TL-W attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MCH3486-TL-W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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