Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BF861A,215 by NXP Semiconductors is a small signal N-CHANNEL FET with 25V DS breakdown voltage. Ideal for amplifier applications, it operates in depletion mode and has a max power dissipation of 0.25W. With a peak reflow temperature of 260°C, this transistor features a junction technology and offers low feedback capacitance at 2.7pF.
Median Price
$0.253
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$0.248
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Argo Parts USA
$0.245
Ampacity Inc.
$3.050
AZTECH Wire
$17.603
One Stop Electronics
$31.050
Perfect Parts
UNI Independent Distributors
Corphita
Microchip USA
PLASTIC/EPOXY - This material provides durability and protection for the transistor.
N-CHANNEL - N-channel transistors offer high current handling capabilities.
SINGLE - Single configuration simplifies circuit design.
AMPLIFIER - Designed specifically for amplification purposes.
YES - Allows for easy and secure installation on circuit boards.
25 V - Ensures reliable performance in various voltage conditions.
RECTANGULAR - Rectangular shape facilitates easy placement on a PCB.
GULL WING - Gull wing terminals provide additional stability during installation.
DEPLETION MODE - Depletion mode transistors are ideal for low-power applications.
3 - 3 terminals simplify connection in circuit design.
0.25 W - Able to handle moderate power levels efficiently.
SMALL OUTLINE - Small outline package conserves space on the PCB.
JUNCTION - Junction FET technology offers consistent performance.
150 °C - Suitable for a wide range of operating environments.
SILICON - Silicon transistors offer high performance and reliability.
TIN - Tin finish enhances conductivity and prevents corrosion.
DUAL - Dual terminal position allows for versatile installation.
30 - Withstands peak reflow temperatures for soldering.
260 - Can withstand high reflow temperatures during manufacturing.
2.7 pF - Low feedback capacitance improves high-frequency performance.
Small Signal Field Effect Transistors (FET) BF861A,215 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
BF861A,215 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.21.00.95
SB
8541.21.00.80
PCN Obsolescence/ EOL - Mult Devices 27/Jul/2017
PCN Design/Specification - Resin Hardener 02/Jul/2013
PCN Packaging - All Dev Label Update 15/Dec/2020 Lighter Reels 02/Jan/2014
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
LL4148
Sinyork
RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V;
2N7002
Plessey Semiconductors Discrete Components Div
Other Transistors;
BAV99
Onsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
IRLML6402TRPBF
Infineon Technologies
IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N2222A
SPC TECHNOLOGY/ MULTICOMP
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS138BKW,115
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; No. of Terminals: 3; Additional Features: LOGIC LEVEL COMPATIBLE;
1N4148
General Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Good-ark Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;
2N7002-T1-E3
Vishay Intertechnology
Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.
FSMLF327
Fox Electronics
FSMLF327 by Fox Electronics is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing such as communication systems, industrial automation, and consumer electronics. Operating temperature range from -40 to 85 °C.
LP2950CDT-3.3G
LP2950CDT-3.3G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 0.1A. It has a small outline package style, operates at temperatures ranging from -40 to 125 °C, and is suitable for applications requiring low dropout voltage and precise voltage regulation in electronic circuits.
SMBJ18CA
Fagor Electronica S Coop
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Temic Semiconductors
EU2B-YS2J03C
Idec
ROTARY SWITCH;
MMBF170LT1G
MMBF170LT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.225W. This small outline transistor has a temperature range from -55 to 150 °C.
BSS84PH6327XTSA2
BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.
LM7805CT
Silicon Group
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Package Body Material: PLASTIC/EPOXY; Maximum Load Regulation: .05 %;
MBRS1100T3G
MBRS1100T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.75V. It operates in temperatures ranging from -65 to 175°C, making it suitable for power applications. With a reverse test voltage of 100V, this diode is ideal for high-power circuits requiring efficient rectification.
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 175 Cel; Maximum Reverse Recovery Time: .004 us; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V;
DMG6601LVT-7
Diodes Incorporated
DMG6601LVT-7 by Diodes Inc. is a Small Signal FET with N/P-channel types, ideal for switching applications. It features 30V DS breakdown voltage, 0.055 ohm max RDS(on), and 3.8A max drain current. With AEC-Q101 compliance, it's suitable for automotive electronics requiring high reliability in compact designs.
FDS9431A_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDS9431A_F085 is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR PLASTIC package. Operating at up to 150°C, this MOSFET has 0.13 ohm On Resistance and GULL WING terminals for surface mounting.
SI4532CDY-T1-GE3
SI4532CDY-T1-GE3 by Vishay Intertechnology is a Small Signal FET with N/P-channel, 2 elements, and built-in diode. It operates in enhancement mode for switching applications. With max drain current of 6A, 0.047 ohm RDS(on), and 30V breakdown voltage, it's ideal for high-power circuits in small outline packages.
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
FDG6303N
FDG6303N by Onsemi is a N-CHANNEL FET with 2 elements, built-in diode, and 0.45 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with max ID of 0.5A and 25V DS breakdown voltage. This small outline transistor has a max temp of 150°C and -55°C min temp.
Promax-johnton
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 7.5 ohm; Minimum DS Breakdown Voltage: 60 V;
BC548B
Texas Instruments
NPN; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
BS170/D26Z
National Semiconductor
BS170/D26Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A ID. It operates in ENHANCEMENT MODE, has 3 terminals, and 5 ohm Drain-Source On Resistance. Widely used in electronic circuits for amplification and switching applications due to its SILICON element material and THROUGH-HOLE terminal form.
BSS138WQ-13-F
BSS138WQ-13-F by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2W max power dissipation and -55 to 150°C operating temp range, it's suitable for small outline SMT designs.
FDY3000NZ
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; JESD-30 Code: R-PDSO-F6; Package Shape: RECTANGULAR;
2N7002DW
Panjit International
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G6; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (ID): .115 A;
BSS84AKW,115
NXP Semiconductors
NXP Semiconductors' BSS84AKW,115 is a P-CHANNEL FET with 50V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a Drain Current of 0.15A and On Resistance of 8.5Ω. With a max operating temperature of 150°C, it comes in a PLASTIC/EPOXY package with GULL WING terminals.
FDG6332C_NL
FDG6332C_NL by Fairchild Semiconductor is a Small Signal FET with N/P-Channel types, ideal for switching applications. It features 2 elements with built-in diode in a rectangular package with Gull Wing terminals. Operating in enhancement mode, it has a max drain current of 0.7A and max power dissipation of 0.3W at 150°C.
BS170P
The Diodes Inc. BS170P is a N-CHANNEL FET with 60V DS breakdown voltage and 0.27A ID. Ideal for switching applications, it features a single configuration, 5 ohm RDS(on), and operates in enhancement mode. The package style is IN-LINE with PLASTIC/EPOXY body material and SILICON element material.
DMN63D8LDW-7
DMN63D8LDW-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 0.22A max drain current, and 4.5 ohm max on resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and enhancement mode operation.
BF862,215
BF862,215 by NXP Semiconductors is a small signal FET with N-channel configuration for amplifier applications. It features a min DS breakdown voltage of 20V and max drain current of 0.04A. With surface mount capability and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.
IRLML5103TRPBF
Infineon's IRLML5103TRPBF is a P-CHANNEL FET with 30V DS Breakdown Voltage, 0.54A Drain Current, and 0.6 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, operating from -55 to 150 °C.
SI4447ADY-T1-GE3
Vishay Siliconix
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G8; Transistor Application: SWITCHING;
ZXM61P03FTA
Zetex Plc
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .806 W; No. of Terminals: 3; JESD-609 Code: e3;
MMBFJ177LT1G
MMBFJ177LT1G by Onsemi is a P-CHANNEL FET in PLASTIC/EPOXY package. It operates in DEPLETION MODE with 300 ohm RDS(on) and 5.5 pF Crss, ideal for CHOPPER applications. This SMALL OUTLINE transistor has a max temp of 150°C, making it suitable for various electronic devices.
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BF862
NXP Semiconductors' BF862 is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it has a max power dissipation of 0.225W and max drain current of 0.04A. The transistor's package is RECTANGULAR with GULL WING terminals, suitable for surface mount assembly at temperatures up to 150°C.
BF862T/R
BF862T/R by NXP Semiconductors is a small signal FET with N-channel configuration for amplifier applications. It features a min DS breakdown voltage of 20V, max drain current of 0.04A, and operates in depletion mode. This surface-mount transistor has a gull wing terminal form and comes in a small outline package shape.
BF861A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Field Effect Transistor Technology: JUNCTION; Minimum DS Breakdown Voltage: 25 V;
BF861B,215
NXP Semiconductors BF861B,215 is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it features DEPLETION MODE operation and 2.7pF Crss feedback capacitance. This SMALL OUTLINE transistor has a max power dissipation of 0.25W and operates up to 150°C temperature.
BF861C,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Peak Reflow Temperature (C): 260; JEDEC-95 Code: TO-236AB;
BF861C
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e3; Package Body Material: PLASTIC/EPOXY;
BF861B
The NXP Semiconductors BF861B is a single N-channel FET with 25V breakdown voltage. Ideal for amplifier applications, it operates in depletion mode with 2.7pF feedback capacitance. With a max power dissipation of 0.25W and operating temperature up to 150°C, this transistor features a small outline package shape suitable for surface mount assembly.
BF861C-T
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; JEDEC-95 Code: TO-236AB; Package Shape: RECTANGULAR;
BF861C-TAPE-13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
BF861A-TAPE-7
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR; No. of Terminals: 3;
BF861B-T
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; JESD-30 Code: R-PDSO-G3; Additional Features: LOW NOISE;
BF861BTRL13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Operating Mode: DEPLETION MODE; Field Effect Transistor Technology: JUNCTION;
BF861ATRL13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 25 V; Qualification: Not Qualified; No. of Terminals: 3;
BF861A-TAPE-13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE;
BF861B-TAPE-13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Package Style (Meter): SMALL OUTLINE; Transistor Application: AMPLIFIER;
BF861AT/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 25 V; No. of Terminals: 3;
BF861B-TAPE-7
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; No. of Terminals: 3; Maximum Operating Temperature: 150 Cel;
BF861BT/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; No. of Terminals: 3; Peak Reflow Temperature (C): 260;
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