Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BF862T/R by NXP Semiconductors is a small signal FET with N-channel configuration for amplifier applications. It features a min DS breakdown voltage of 20V, max drain current of 0.04A, and operates in depletion mode. This surface-mount transistor has a gull wing terminal form and comes in a small outline package shape.
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This material ensures durability and protection for the transistor, making it suitable for various applications.
N-channel transistors typically have higher mobility and faster switching speeds compared to P-channel transistors, making it a good choice for amplifier applications.
Single configuration simplifies the circuit design and reduces complexity, making it easier to integrate into amplifier circuits.
Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.
This transistor can be easily mounted on the surface of a circuit board, saving space and allowing for automated assembly.
With a minimum breakdown voltage of 20V, this transistor can handle higher voltages without damage, suitable for amplifier applications.
Junction FET technology provides high input impedance and low output impedance, making it ideal for amplifier circuits.
With a maximum drain current of 0.04A, this transistor can handle moderate current levels, making it suitable for small signal applications.
Small Signal Field Effect Transistors (FET) BF862T/R attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
BF862T/R Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
FDC5614P
TAIZHOU ELECTRONICS CO LTD
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.92 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;
SMBJ18CA
General Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FDN306P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;
2N2222A
Micro Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148WS
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Solid State Devices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LL4148
Weitronic Enterprise
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20Z
Maxim Integrated
DS18B20Z by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Suitable for applications requiring precise temperature monitoring in compact spaces.
2N7002
Weitron Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;
LM555CMX
Texas Instruments
LM555CMX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a nominal voltage of 5V and supports power supplies ranging from 5V to 15V. This versatile IC, housed in a small outline package, is commonly used for pulse and rectangular waveform generation in commercial temperature environments.
LM317LMX/NOPB
LM317LMX/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max input-output voltage differential of 40V. It operates in temperatures ranging from -40°C to 125°C and has a max output current of 0.1A, making it suitable for various applications requiring precise voltage regulation.
RC0402FR-071KL
Yageo
The Yageo RC0402FR-071KL is a fixed resistor with a resistance of 1000 ohm and a tolerance of 1%. It is suitable for surface mount applications and has a max operating temperature of 155 °C.
M85049/85-08W02
Amphenol
CIRCULAR CONN ACCESSORY; Shell Sizes: 8; 9; IEC Conformity: NO; MIL-Connector Accessory Name: BAND LOCK ADAPTER; MIL Conformity: YES; DIN Conformity: NO;
DS18B20
DS18B20 by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Commonly used in applications requiring precise temperature monitoring like HVAC systems and industrial automation.
BSS84-7-F
SPC TECHNOLOGY/ MULTICOMP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
1N4148
First Components International
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; Config: SINGLE; No. of Elements: 1;
General Diode
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
NUP2105LT1G
Onsemi
NUP2105LT1G by Onsemi is a Transient Suppression Device with 350W power dissipation, 29.1V breakdown voltage, and 44V clamping voltage. Commonly used in electronic circuits for surge protection due to its bidirectional polarity and silicon diode element material.
SI9945BDY-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI9945BDY-T1-GE3 is a N-channel FET with 60V DS breakdown voltage and 5.3A max drain current, ideal for switching applications. It features separate elements with built-in diode in a small outline package, operating in enhancement mode at up to 150°C. Suitable for surface mount assembly with gull wing terminals and matte tin finish.
2N7002DWQ-13-F
Diodes Incorporated
Diodes Inc. 2N7002DWQ-13-F is a N-channel FET with 60V DS breakdown voltage, 0.23A max drain current, and 7.5 ohm max on resistance. Ideal for switching applications in small outline packages at up to 150°C operating temp.
2N7002KW
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .34 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSS138W
Good-ark Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
MMBF170
Lite-on Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Terminal Form: GULL WING; Terminal Position: DUAL;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Minimum DS Breakdown Voltage: 60 V; Transistor Application: SWITCHING;
2N7002,215
NXP Semiconductors
2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.
NDS0605
NDS0605 by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage and 0.18A drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.36W. The small outline package with gull wing terminals makes it suitable for surface mount designs.
NTR4503NT1G
NTR4503NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 1.5A max drain current, and 0.11 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode, surface mountable, and has a max operating temperature of 150°C.
SI2309CDS-T1-GE3
SI2309CDS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 1.6A Drain Current, and 0.345 ohm On Resistance. With ENHANCEMENT MODE operation, this transistor has a max power dissipation of 1.7W and operates b/w -55 to 150 °C temperature range.
BSS306NH6327XTSA1
Infineon Technologies
BSS306NH6327XTSA1 by Infineon Technologies is a N-CHANNEL FET with 30V DS Breakdown Voltage and 2.3A ID. It features a 0.057 ohm RDS(on) and 17pF Crss, suitable for small signal applications in electronics requiring high drain current capabilities. The PLASTIC/EPOXY package with GULL WING terminals makes it ideal for surface mount designs in enhancement mode operation.
NX3008NBKS,115
Nexperia
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Minimum Operating Temperature: -50 Cel; Transistor Application: SWITCHING;
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: 3.5 ohm;
IRLML6402TRPBF-1
International Rectifier
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 4.3 A;
SI4401DDY-T1-GE3
SI4401DDY-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage, 16.1A Drain Current, and 0.015 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C with GULL WING terminals in a RECTANGULAR package.
FDG6332C-F085P
Onsemi's FDG6332C-F085P is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has 20V DS breakdown voltage, 0.7A max drain current, and 0.3ohm RDS(on). Operating from -55 to 150°C, this MOSFET is AEC-Q101 compliant and comes in a small outline package.
FDC6333C
FDC6333C by Onsemi is a small signal field effect transistor (FET) with N-channel and P-channel polarity. It has a min DS breakdown voltage of 30V and max drain current of 2.5A, making it suitable for switching applications. This surface mount transistor operates in enhancement mode and has a max operating temperature of 150°C.
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 3;
FDN338P
FDN338P by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features a max drain current of 1.6A and 0.115 ohm on-resistance, operating in enhancement mode at up to 150°C. This small outline transistor with GULL WING terminals is designed for high power dissipation (0.5W) in surface mount configurations.
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BF862,215
BF862,215 by NXP Semiconductors is a small signal FET with N-channel configuration for amplifier applications. It features a min DS breakdown voltage of 20V and max drain current of 0.04A. With surface mount capability and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.
BF862
NXP Semiconductors' BF862 is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it has a max power dissipation of 0.225W and max drain current of 0.04A. The transistor's package is RECTANGULAR with GULL WING terminals, suitable for surface mount assembly at temperatures up to 150°C.
BF861A,215
BF861A,215 by NXP Semiconductors is a small signal N-CHANNEL FET with 25V DS breakdown voltage. Ideal for amplifier applications, it operates in depletion mode and has a max power dissipation of 0.25W. With a peak reflow temperature of 260°C, this transistor features a junction technology and offers low feedback capacitance at 2.7pF.
BF861A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Field Effect Transistor Technology: JUNCTION; Minimum DS Breakdown Voltage: 25 V;
BF861B,215
NXP Semiconductors BF861B,215 is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for AMPLIFIER applications, it features DEPLETION MODE operation and 2.7pF Crss feedback capacitance. This SMALL OUTLINE transistor has a max power dissipation of 0.25W and operates up to 150°C temperature.
BF861C,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Peak Reflow Temperature (C): 260; JEDEC-95 Code: TO-236AB;
BF861C
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e3; Package Body Material: PLASTIC/EPOXY;
BF861B
The NXP Semiconductors BF861B is a single N-channel FET with 25V breakdown voltage. Ideal for amplifier applications, it operates in depletion mode with 2.7pF feedback capacitance. With a max power dissipation of 0.25W and operating temperature up to 150°C, this transistor features a small outline package shape suitable for surface mount assembly.
BF861C-T
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; JEDEC-95 Code: TO-236AB; Package Shape: RECTANGULAR;
BF861C-TAPE-13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
BF861A-TAPE-7
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR; No. of Terminals: 3;
BF861B-T
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; JESD-30 Code: R-PDSO-G3; Additional Features: LOW NOISE;
BF861BTRL13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Operating Mode: DEPLETION MODE; Field Effect Transistor Technology: JUNCTION;
BF861ATRL13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 25 V; Qualification: Not Qualified; No. of Terminals: 3;
BF861A-TAPE-13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE;
BF861B-TAPE-13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Package Style (Meter): SMALL OUTLINE; Transistor Application: AMPLIFIER;
BF861AT/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 25 V; No. of Terminals: 3;
BF861B-TAPE-7
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; No. of Terminals: 3; Maximum Operating Temperature: 150 Cel;
BF861BT/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; No. of Terminals: 3; Peak Reflow Temperature (C): 260;
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