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2N4392-E3

Vishay Intertechnology

2N4392-E3 by Vishay Intertechnology

2N4392-E3 by Vishay Intertechnology is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 1.8W and drain-source on resistance of 60 ohm. Ideal for SWITCHING applications due to its low feedback capacitance of 3.5pF and temperature range from -55°C to 200°C.

Median Price

$2.916

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 44 parts In-Stock

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$2.916

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Vyrian

USA . 5,140 parts In-Stock

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VNN

France . 2,501 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 100 parts In-Stock

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Holdelec - ElecDif-Pro

France . 40 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 57 parts In-Stock

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$0.970

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Aztec Data Supply Inc.

USA . 3,937 parts In-Stock

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$1.620

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Argo Parts USA

USA . 4,415 parts In-Stock

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$2.916

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$2.916

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Continental Prestige Electronics

USA . 3,588 parts In-Stock

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$2.916

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$2.858

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Netroflash

USA . 1,000 parts In-Stock

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$2.916

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$2.770

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$2.712

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$2.916

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$2.712

AZTECH Wire

Italy . 464 parts In-Stock

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$5.973

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Ampacity Inc.

Singapore . 456 parts In-Stock

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$52.050

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Glotronic Ltd.

UK . 3,140 parts In-Stock

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Overview

Unleash the power of innovation with the 2N4392-E3 by Vishay Intertechnology, a top-tier manufacturer known for delivering high-quality electronic components. Designed as a Small Signal Field Effect Transistor (FET), this product offers superior performance in switching applications. With its N-channel configuration and depletion mode operation, this FET provides seamless functionality and reliability. Experience the benefits of increased efficiency and precision in your projects with the 2N4392-E3, where quality meets value for unparalleled results.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides durability and good heat dissipation, making the transistor suitable for high power applications.

Maximum Power Dissipation (Abs): 1.8 W

High maximum power dissipation capability allows the transistor to handle large power loads without overheating, ensuring reliable performance.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, expanding its range of potential applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature means the transistor can perform in cold environments without any issues, increasing its versatility.

Maximum Drain-Source On Resistance: 60 ohm

Low on-resistance results in minimal power loss and efficient operation of the transistor in switching applications.

Maximum Feedback Capacitance (Crss): 3.5 pF

Low feedback capacitance helps in reducing signal distortion and improving the overall performance of the transistor in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N4392-E3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

LOW INSERTION LOSS

Case Connection:

GATE

Configuration:

Maximum Drain-Source On Resistance:

60 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

3.5 pF

JEDEC-95 Code:

TO-206AA

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N4392-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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