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2N4393-E3

Vishay Intertechnology

2N4393-E3 by Vishay Intertechnology

2N4393-E3 by Vishay Intertechnology is a N-CHANNEL FET with 1.8W power dissipation, -55 to 200 °C operating temp range, and 100 ohm max drain-source resistance. Ideal for switching applications due to its DEPLETION MODE operation and low feedback capacitance of 3.5 pF.

Median Price

$2.313

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

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$2.313

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Vyrian

USA . 5,102 parts In-Stock

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VNN

France . 2,084 parts In-Stock

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Continental Prestige Electronics

USA . 5,380 parts In-Stock

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$2.313

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$2.267

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Argo Parts USA

USA . 4,648 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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500

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AZTECH Wire

Italy . 672 parts In-Stock

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$19.686

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Ampacity Inc.

Singapore . 1,505 parts In-Stock

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$55.050

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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Glotronic Ltd.

UK . 3,140 parts In-Stock

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Perfect Parts

USA . 661 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the 2N4393-E3 by Vishay Intertechnology. Crafted with precision and expertise, this Small Signal Field Effect Transistor (FET) offers unmatched performance in switching applications. With its N-CHANNEL polarity and DEPLETION MODE operating mode, this transistor ensures seamless functionality and reliability. Experience the superior quality and value that Vishay Intertechnology products bring to the table, revolutionizing the way you approach electronic projects. Elevate your creations with the 2N4393-E3 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides durability and efficient heat dissipation, making the transistor suitable for high-power applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have faster switching speeds and higher efficiency compared to P-channel transistors, making them ideal for switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various electronic applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in high-frequency and high-power circuits.

Package Shape: ROUND

Round package shape allows for easy mounting and compact integration in circuit layouts.

Operating Mode: DEPLETION MODE

Depletion mode transistors offer high input impedance and low on-resistance, making them suitable for applications requiring high gain and low power consumption.

No. of Terminals: 3

3 terminals provide simple connectivity and ease of use in circuit designs.

Maximum Power Dissipation (Abs): 1.8 W

Able to handle up to 1.8 watts of power dissipation, making it suitable for a wide range of power-hungry applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers easy mounting and handling, enhancing the overall convenience of using the transistor.

Field Effect Transistor Technology: JUNCTION

Junction FET technology is known for its high input impedance, low noise, and high switching speeds, making it ideal for various electronic applications.

Maximum Operating Temperature: 200 °C

Capable of operating at temperatures up to 200°C, making it suitable for high-temperature environments.

Transistor Element Material: SILICON

Silicon transistors offer high performance characteristics, reliability, and consistency, ensuring stable operation over a wide range of conditions.

Minimum Operating Temperature: -55 °C

Capable of operating at temperatures as low as -55°C, making it suitable for applications in harsh and cold environments.

Terminal Finish: Matte Tin (Sn)

Matte Tin finish provides good solderability and electrical conductivity, ensuring reliable connections in circuit assemblies.

Maximum Drain-Source On Resistance: 100 ohm

Low on-resistance helps minimize power losses and improve efficiency in switching applications.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB layout and mounting, simplifying the assembly process.

Case Connection: GATE

Gate connection simplifies the circuit design and control of the FET, ensuring easy integration into electronic systems.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, ensuring reliable soldering and assembly processes.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures proper soldering and mounting of the transistor onto PCBs.

Maximum Feedback Capacitance (Crss): 3.5 pF

Low feedback capacitance helps reduce signal distortion and improve performance in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N4393-E3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

LOW INSERTION LOSS

Case Connection:

GATE

Configuration:

Maximum Drain-Source On Resistance:

100 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

3.5 pF

JEDEC-95 Code:

TO-206AA

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N4393-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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