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2N4393

Texas Instruments

2N4393 by Texas Instruments

2N4393 by Texas Instruments is a N-CHANNEL FET with a min DS Breakdown Voltage of 40V. It is commonly used in CHOPPER applications due to its DEPLETION MODE and low Max Drain-Source On Resistance of 100 ohm.

Median Price

$19.250

Lifecycle Status

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68

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DigiKey

USA . 81 parts In-Stock

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$19.250

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$17.880

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Microchip Technology

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Digiode

USA . 10,482 parts In-Stock

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TEDSS.com

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American Microsemiconductor Inc.

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Nova Conductors

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IBS Electronics

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Component Electronics Inc.

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J & M Industries LLC

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Speed Components Ltd

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First Choice Components Inc.

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Manoshevitz Elec. Sales

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Connector Distribution Corp

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Right Parts Inc.

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Semtec, LLC

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Corphita

USA . 8,481 parts In-Stock

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$1.269

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IDEA Electronic Components Group

UK . 3,416 parts In-Stock

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$1.596

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$1.437

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ChromeModa Solutions

Germany . 5,223 parts In-Stock

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$1.709

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$1.401

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DigiPath Technology Company

USA . 2,128 parts In-Stock

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MKK Technologies

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Aranea Global

USA . 100 parts In-Stock

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Continental Prestige Electronics

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QUARKTWIN TECHNOLOGY LTD

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Overview

Experience superior performance and quality with the 2N4393 by Texas Instruments, a leading manufacturer in the industry. This N-CHANNEL small signal field-effect transistor (FET) boasts a range of applications, including chopper circuits. With a minimum DS breakdown voltage of 40V and a maximum power dissipation of 1.8W, this product offers excellent reliability and durability. Its cylindrical package shape and wire terminal form enhance its convenience and versatility. Trust Texas Instruments to deliver cutting-edge technology and innovation for all your electronic needs. Upgrade your circuitry with the 2N4393 and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal as the package body material provides excellent durability and heat dissipation, making this product highly reliable in demanding applications.

Polarity or Channel Type: N-CHANNEL

With N-channel polarity, this field-effect transistor allows for efficient electron flow, enabling faster switching speeds and enhancing overall performance.

Configuration: SINGLE

The single configuration of this transistor simplifies circuit design and installation, making it suitable for a wide range of small signal applications.

Transistor Application: CHOPPER

Designed for chopper applications, this transistor excels at converting DC power to AC power, offering precise control and high efficiency.

Minimum DS Breakdown Voltage: 40 V

With a minimum breakdown voltage of 40 V, this transistor can handle higher voltage levels, providing a reliable barrier against electrical surges or fluctuations.

Package Shape: ROUND

The round package shape allows for easy installation and fitting in compact spaces, making it suitable for small signal applications with limited board real estate.

Terminal Form: WIRE

The use of wire terminals simplifies the connection process, enabling quick and hassle-free assembly, thus saving time and effort.

Operating Mode: DEPLETION MODE

Operating in depletion mode, this transistor enhances circuit efficiency by reducing power consumption and minimizing distortion during signal amplification.

No. of Elements: 1

With a single element, this transistor simplifies circuit design and reduces complexity, ensuring straightforward integration into various electronic systems.

No. of Terminals: 3

Featuring three terminals, this transistor allows for easy connection and integration within different circuit configurations, providing flexibility and versatility.

Maximum Power Dissipation (Abs): 1.8 W

With a maximum power dissipation of 1.8 W, this transistor can handle substantial power levels, making it reliable and suitable for demanding applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers efficient heat dissipation and optimal physical protection, ensuring the longevity and reliability of the transistor.

Field Effect Transistor Technology: JUNCTION

Utilizing junction-based technology, this transistor provides excellent performance, low leakage current, and high thermal stability.

Maximum Operating Temperature: 200 °C

Operating reliably up to a maximum temperature of 200°C, this transistor can withstand high-temperature environments without compromising performance.

Transistor Element Material: SILICON

Made from silicon, this transistor exhibits excellent electrical properties, high reliability, and wide temperature tolerance, making it suitable for various operating conditions.

Maximum Drain-Source On Resistance: 100 ohm

With a maximum drain-source on resistance of 100 ohms, this transistor minimizes power losses and offers efficient current flow, ensuring optimal performance.

Terminal Position: BOTTOM

Placed at the bottom position, the terminals facilitate easy PCB mounting and connection, allowing for simplified installation and assembly.

Case Connection: GATE

The case connection to the gate provides effective EMI shielding, improving overall signal integrity and reducing the risk of interference.

Maximum Feedback Capacitance (Crss): 3.5 pF

With a maximum feedback capacitance of 3.5 picofarads, this transistor minimizes the risk of oscillations and ensures stable operation, even in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N4393 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

GATE

Configuration:

Minimum DS Breakdown Voltage:

40 V

Maximum Drain-Source On Resistance:

100 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

3.5 pF

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

CHOPPER

Transistor Element Material:

SILICON

Trade Compliance

2N4393 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-003-9826, 5961000039826, 5961-00-288-1906, 5961002881906, 5961-00-469-9909, 5961004699909, 5961-00-107-2739, 5961001072739, 5961-00-133-9010, 5961001339010, 5961-00-188-3227, 5961001883227, 5961-00-231-9962, 5961002319962, 5961-00-491-2602, 5961004912602, 5961-00-488-4281, 5961004884281, 5961-01-165-0594, 5961011650594, 5961-01-206-4434, 5961012064434, 5961-99-655-3093, 5961996553093, 5961-01-180-0419, 5961011800419, 5961-99-772-2349, 5961997722349, 5961-12-321-4777, 5961123214777, 5961-14-466-2691, 5961144662691, 5961-99-629-8501, 5961996298501

NIIN

000039826, 002881906, 004699909, 001072739, 001339010, 001883227, 002319962, 004912602, 004884281, 011650594, 012064434, 996553093, 011800419, 997722349, 123214777, 144662691, 996298501

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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