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2SK3813-AZ

Renesas Electronics

2SK3813-AZ by Renesas Electronics

The Renesas Electronics 2SK3813-AZ is a N-CHANNEL FET with max ID of 60A and Pd of 84W. Ideal for high-power applications, it operates up to 150°C, making it suitable for industrial use where peak reflow temp reaches 260°C.

Median Price

$4.665

Lifecycle Status

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5

In-Stock Inventory

1k+

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Rochester

USA . 1,679 parts In-Stock

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$1.870

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$1.750

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$1.590

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Chip1Stop

Japan . 205 parts In-Stock

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$7.460

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VNN

France . 22,191 parts In-Stock

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Vyrian

USA . 2,065 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Ampacity Inc.

Singapore . 588 parts In-Stock

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$1.590

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588

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AZTECH Wire

Italy . 741 parts In-Stock

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$19.820

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Netroflash

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Overview

Unlock the potential of your electronic projects with the 2SK3813-AZ by Renesas Electronics. Renowned for their high-quality components, Renesas Electronics delivers reliability and performance in every product. The 2SK3813-AZ falls under the category of Small Signal Field Effect Transistors (FET), offering N-CHANNEL polarity with a maximum drain current of 60 A and a maximum power dissipation of 84 W. Ideal for a variety of applications, this transistor provides exceptional value, efficiency, and versatility for your projects. Choose Renesas Electronics for top-notch quality and innovation.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs are commonly used in low-side switching applications, providing efficient current control.

Configuration: SINGLE

Single configuration FETs are easier to control and integrate into circuits, making them suitable for simpler applications.

Maximum Drain Current (Abs) (ID): 60 A

With a high maximum drain current, this FET can handle large currents without overheating or failure, making it reliable in high-power applications.

Maximum Power Dissipation (Abs): 84 W

The high maximum power dissipation allows this FET to handle large amounts of power without being damaged, making it suitable for high-power applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance and reliability, making this FET a durable and efficient choice for various applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures without performance degradation, increasing its reliability in harsh environments.

Maximum Time At Peak Reflow Temperature (s): 10

The short maximum time at peak reflow temperature ensures that this FET can be easily soldered onto PCBs without risk of damage, simplifying the manufacturing process.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this FET can be soldered using lead-free processes without compromising its performance or reliability, making it compliant with modern manufacturing standards.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2SK3813-AZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

60 A

Maximum Drain Current (ID):

60 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

10

Trade Compliance

2SK3813-AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Renesas Electronics

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