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2SK30ATM-O

Toshiba

2SK30ATM-O by Toshiba

The Toshiba 2SK30ATM-O is a N-CHANNEL FET with DEPLETION MODE operation, ideal for AMPLIFIER applications. Featuring a PLASTIC/EPOXY body, it has a max power dissipation of 0.1W and can operate at temperatures up to 125°C. This SINGLE configuration transistor has a cylindrical package shape with three terminals in through-hole form.

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Aztec Data Supply Inc.

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AZTECH Wire

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Overview

Upgrade your amplifier with the Toshiba 2SK30ATM-O Small Signal Field Effect Transistor. Manufactured by Toshiba, a leader in semiconductor technology, this N-channel transistor offers reliable performance and high-quality construction. Ideal for amplifier applications, this transistor provides excellent signal amplification and precise control. With its low power dissipation and durable package body material, this transistor delivers long-lasting value and exceptional efficiency. Trust Toshiba for superior technology that meets your needs.

Feature Benefit Bullets

Package Body Material : PLASTIC/EPOXY

Being made of plastic/epoxy, this FET is lightweight and durable, making it suitable for portable electronic devices.

Polarity or Channel Type : N-CHANNEL

N-CHANNEL FETs are known for their low on-resistance, making them efficient for high current applications.

Configuration : SINGLE

The single configuration simplifies the design and integration process, making it easy to use in various circuits.

Transistor Application : AMPLIFIER

Designed for amplifier applications, this FET can provide good amplification and signal processing capabilities.

Package Shape : ROUND

The round package shape allows for easy mounting and placement in circular layouts, optimizing space usage.

Terminal Form : THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, ensuring stability and reliability in circuit connections.

Operating Mode : DEPLETION MODE

The depletion mode operation allows for easy biasing and control of the transistor for specific circuit requirements.

No. of Terminals : 3

With 3 terminals, this FET provides flexibility in connecting to external components for diverse circuit configurations.

Maximum Power Dissipation (Abs) : 0.1 W

The low power dissipation of 0.1 W helps in minimizing heat generation and improving energy efficiency.

Package Style (Meter) : CYLINDRICAL

The cylindrical package style offers uniform heat dissipation and easy handling during installation.

Field Effect Transistor Technology : JUNCTION

Junction FET technology provides high-frequency operation and low noise characteristics, ideal for signal processing applications.

Maximum Operating Temperature : 125 °C

With a maximum operating temperature of 125°C, this FET can withstand elevated temperatures without performance degradation.

Transistor Element Material : SILICON

Silicon-based transistor elements offer high performance, reliability, and compatibility with a wide range of electronic systems.

Terminal Finish : TIN LEAD

Tin lead terminal finish ensures strong solder connections and prevents oxidation, enhancing the longevity of the FET.

Terminal Position : BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering, streamlining the assembly process.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2SK30ATM-O attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Configuration:

Field Effect Transistor Technology:

JUNCTION

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SK30ATM-O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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