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2SK30ATM-Y

Toshiba

2SK30ATM-Y by Toshiba

The Toshiba 2SK30ATM-Y is a N-CHANNEL FET with DEPLETION MODE operation. It has a max power dissipation of 0.1W and can operate at temperatures up to 125°C. Ideal for AMPLIFIER applications due to its SILICON material and THROUGH-HOLE terminal form.

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USA . 15,980 parts In-Stock

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LIBRA Elektronik GmbH

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Nova Conductors

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Aztec Data Supply Inc.

USA . 304 parts In-Stock

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Corohmni

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AZTECH Wire

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Metaverse IC Inc.

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Overview

Upgrade your electronic projects with the high-quality 2SK30ATM-Y Small Signal Field Effect Transistor by Toshiba. Known for their reliable products, Toshiba delivers exceptional performance and durability in every component. This N-CHANNEL transistor is perfect for amplifier applications, offering superior conductivity and efficiency. Whether you're a hobbyist or a professional, this transistor provides unmatched value and benefits, ensuring a seamless and reliable operation for all your projects. Choose Toshiba for unparalleled quality and innovation in electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer high input impedance and low output impedance, making them suitable for various amplifier applications.

Configuration: SINGLE

Simplifies circuit designs and makes it easier to implement in amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Package Shape: ROUND

The round package shape provides easy mounting and handling in circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer a secure and reliable connection to circuit boards.

Operating Mode: DEPLETION MODE

Depletion mode operation enables precise control over the transistor's conductance, allowing for efficient signal amplification.

No. of Terminals: 3

The 3-terminal design simplifies circuit connections and facilitates easy integration into amplifier circuits.

Maximum Power Dissipation (Abs): 0.1 W

With a maximum power dissipation of 0.1 W, this transistor can handle moderate power levels in amplifier applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact design that saves space in circuit layouts.

Field Effect Transistor Technology: JUNCTION

Junction FET technology provides high input impedance and low noise characteristics, ideal for amplifier applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this transistor can withstand high temperature environments and operate reliably.

Transistor Element Material: SILICON

Silicon materials offer superior electrical properties, ensuring high performance and reliability in amplifier circuits.

Terminal Finish: TIN LEAD

Tin lead terminal finish facilitates soldering and ensures a secure connection to circuit boards.

Terminal Position: BOTTOM

Bottom terminal position simplifies board layout and enables easy connections in amplifier circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2SK30ATM-Y attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Configuration:

Field Effect Transistor Technology:

JUNCTION

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SK30ATM-Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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