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Toshiba Small Signal Field Effect Transistors (FET) 8

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
TPC8111(TE12L,Q,M) by Toshiba

TPC8111(TE12L,Q,M)

Toshiba

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; No. of Terminals: 8; Minimum DS Breakdown Voltage: 30 V;

SINGLE WITH BUILT-IN DIODE

30 V

11 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

1

8

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

YES

GULL WING

DUAL

SWITCHING

SILICON

2SJ360(TE12L,F) by Toshiba

2SJ360(TE12L,F)

Toshiba

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (ID): 1 A;

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

1 A

1 A

1.2 ohm

METAL-OXIDE SEMICONDUCTOR

TO-243AA

R-PSSO-F3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

1.5 W

Other Transistors

YES

FLAT

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

SSM3K121TU by Toshiba

SSM3K121TU

Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;

SINGLE WITH BUILT-IN DIODE

20 V

3.2 A

3.2 A

.14 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.8 W

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

TPCC8066-HLQS by Toshiba

TPCC8066-HLQS

Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 5; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

11 A

.019 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

1

5

ENHANCEMENT MODE

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

YES

FLAT

DUAL

SWITCHING

SILICON

2SK2963(TE12L,F) by Toshiba

2SK2963(TE12L,F)

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 1 A;

SINGLE

1 A

1 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

N-CHANNEL

1.5 W

FET General Purpose Power

YES

SSM6N48FU,RF(D by Toshiba

SSM6N48FU,RF(D

Toshiba

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G6;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

30 V

.1 A

5.4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

2

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

2SJ360(F) by Toshiba

2SJ360(F)

Toshiba

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1; Package Shape: RECTANGULAR;

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

1 A

1.2 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-F3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

YES

FLAT

SINGLE

SWITCHING

SILICON

TPCC8093,L1Q by Toshiba

TPCC8093,L1Q

Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Minimum DS Breakdown Voltage: 20 V; No. of Elements: 1;

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

21 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

140 pF

S-PDSO-F8

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

30 W

YES

FLAT

DUAL

SWITCHING

SILICON