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2SK3018T106

ROHM

2SK3018T106 by ROHM

ROHM 2SK3018T106 is a N-CHANNEL FET with 30V DS breakdown voltage and 0.1A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, it has a max power dissipation of 0.2W at 150°C.

Median Price

$0.278

Lifecycle Status

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Newark

USA . 727 parts In-Stock

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Future Electronics

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Element14

Singapore . 23,320 parts In-Stock

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Farnell

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Nova Conductors

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Bristol Electronics

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Component Electronics Inc.

Canada . 48 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Infinite Electronics LLP

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NAC Semi

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ComSIT Distribution GmbH

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ComSIT USA

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ECAB

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Rutronik

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Corel Iberica Componentes, S.L.

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Pegasus Components GmbH

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Connector Distribution Corp

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Right Parts Inc.

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Semtec, LLC

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Semicontronic

India . 23,974 parts In-Stock

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Ampacity Inc.

Singapore . 11,817 parts In-Stock

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Argo Parts USA

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Component Stockers USA

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Aztec Data Supply Inc.

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Corohmni

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Benley Electronics

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iodParts Technologies Inc.

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Continental Prestige Electronics

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Assy Fe

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GreenTree Electronics

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Overview

Unlock the power of innovation with the ROHM 2SK3018T106 Small Signal Field Effect Transistor. Engineered with precision by ROHM, a trusted manufacturer known for its top-quality electronic components, this N-CHANNEL FET is designed for switching applications with a built-in diode for enhanced performance. Whether you're looking to optimize power management or enhance circuit efficiency, this transistor offers unparalleled value and reliability. Take your projects to the next level with the 2SK3018T106 and experience the difference that superior technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher mobility and conductivity, making them suitable for many applications including switching.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient switching operations and protection against reverse current flow.

Transistor Application: SWITCHING

Designed specifically for switching operations, making it ideal for use in various electronic circuits.

Surface Mount: YES

Enables easy and efficient PCB assembly with a compact footprint.

Minimum DS Breakdown Voltage: 30 V

With a high breakdown voltage, the transistor can handle higher voltages without getting damaged.

Maximum Drain Current (ID): 0.1 A

Capable of handling moderate current levels for various applications.

Maximum Power Dissipation: 0.2 W

Can dissipate heat effectively to prevent overheating and ensure stable operation.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, suitable for harsh environments.

Maximum Drain-Source On Resistance: 8 ohm

Low on-resistance leads to efficient switching and reduced power loss.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2SK3018T106 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

.1 A

Maximum Drain Current (ID):

.1 A

Maximum Drain-Source On Resistance:

8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SK3018T106 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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