Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Onsemi's 2SK3557-7-TB-E is a N-channel FET with 0.05A max drain current. It operates in depletion mode and has Gull Wing terminals for surface mount applications. Ideal for amplifier circuits due to its silicon element material and small outline package style.
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The plastic/epoxy package body material makes the transistor lightweight and durable, ideal for portable applications.
N-channel transistors typically have higher mobility and conductivity compared to P-channel transistors, making them efficient for amplification purposes.
The single configuration simplifies circuit design and reduces complexity, making the transistor easier to work with.
Designed specifically for amplifier applications, ensuring optimal performance and reliability in amplification circuits.
Surface mount compatibility allows for easy and efficient PCB assembly, saving time and effort during production.
The rectangular package shape provides a compact footprint, ideal for space-constrained applications.
The gull wing terminal form offers secure and reliable solder connections, ensuring stable electrical connections.
Depletion mode operation allows for easy biasing and control of the transistor, providing flexibility in circuit design.
The 3-terminal configuration simplifies connections and reduces the chances of wiring errors, enhancing overall reliability.
The small outline package style saves space on the PCB, making it suitable for compact electronic devices.
Junction FET technology offers high switching speeds and low on-resistance, making the transistor suitable for high-frequency applications.
Silicon is a widely-used semiconductor material known for its reliability and performance, ensuring long-term stability of the transistor.
The tin bismuth terminal finish provides excellent solderability and resistance to corrosion, ensuring long-term reliability in varied operating conditions.
The maximum drain current rating of 0.05A allows for safe operation within specified limits, preventing overheating and damage to the transistor.
The dual terminal position provides flexibility in circuit layout and allows for easy connection to external components.
The maximum time at peak reflow temperature of 30 seconds ensures safe and reliable solder reflow processes during assembly.
The peak reflow temperature of 260°C ensures proper solder melting and joint formation, meeting industry standards for lead-free assembly processes.
Small Signal Field Effect Transistors (FET) 2SK3557-7-TB-E attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi
Additional Features:
Configuration:
Maximum Drain Current (ID):
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
2SK3557-7-TB-E Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
2N7002
Telcom Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;
1N4148
Microchip Technology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAV99LT1G
Onsemi
BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.
SMBJ18CA
Leshan Radio
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CRG0805F10R
TE Connectivity
TE Connectivity's CRG0805F10R is a 10 ohm fixed resistor with 1% tolerance and 0.125 W power dissipation. It features thick film technology, SMT package style, and matte tin over nickel terminal finish. Ideal for surface mount applications in electronics, offering a temperature coefficient of 200 ppm/°C and operating voltage of 150 V.
MMSZ5245BT1G
MMSZ5245BT1G by Onsemi is a Zener diode with 15V nominal reference voltage, 8.5mA test current, and 16 ohm dynamic impedance. It is used in applications requiring precise voltage regulation in a compact SMD package for temperatures ranging from -55 to 150°C.
LL4148
Excel (Suzhou) Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
ABS25-32.768KHZ-1-T
Abracon
Abracon's ABS25-32.768KHZ-1-T crystal oscillator offers 10 ppm frequency tolerance, 126% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal operating frequency, such as IoT devices and precision timing systems.
AB26TRB-32.768KHZ--T
AB26TRB-32.768KHZ--T by Abracon is a crystal oscillator with 20 ppm frequency tolerance, 126% stability, and 35000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency in surface mount configurations.
2N2222A
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Collector-Base Capacitance: 8 pF;
M39029/58-360
Tri-star Electronics International
CONNECTOR ACCESSORY; Material: COPPER ALLOY; MIL Conformity: YES; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; MIL-Connector Accessory Name: CONTACT; Terminal Type: CRIMP;
BAV99
Sprague Electric
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1.3 V; Maximum Output Current: .1 A; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel;
Micro Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SMMBT3904LT1G
SMMBT3904LT1G by Onsemi is a NPN BJT with 3 terminals, 0.3W power dissipation, and 40V max collector-emitter voltage. Ideal for small outline applications requiring a transistor with hFE of at least 30, it operates up to 150°C and has a transition frequency of 300MHz.
National Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;
LFXTAL025159REEL
Iqd Frequency Products
LFXTAL025159REEL by IQD Frequency Products is a 32.768 kHz crystal oscillator with 20 ppm frequency tolerance and 40,000 ohm series resistance. It is ideal for applications requiring precise timekeeping, such as real-time clocks in IoT devices or microcontrollers in wearables. The surface-mount design with a drive level of 1 uW makes it suitable for compact electronic systems.
Bourns
STMicroelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;
M39029/56-351
Defense Logistics Agency
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Mating Contacts: M39029/58-363; Removal Tool Sources: MILITARY; Alternate Contact Sources: MILITARY;
STM32H743IIT6
STM32H743IIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications due to its wide temperature range (-40°C to 85°C) and various connectivity options (CAN, I2C, UART, USB).
MMBFJ113
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; JESD-609 Code: e3; Maximum Drain-Source On Resistance: 100 ohm;
BSS138LT1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
IRLML5103TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Transistor Application: SWITCHING; JESD-30 Code: R-PDSO-G3;
BSS84-7-F
Diodes Incorporated
Diodes Inc. BSS84-7-F is a P-channel FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 150°C, it has Gull Wing terminals and matte tin finish.
FDC6333C_NL
FDC6333C_NL by Fairchild Semiconductor is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has max drain current of 2.5A, min DS breakdown voltage of 30V, and max power dissipation of 0.96W. Suitable for surface mount with temp range -55 to 150°C.
FDMQ8205A
FDMQ8205A by Onsemi is a Small Signal FET with N/P-Channel, 1.7A max drain current, and 0.051 ohm on-resistance. Ideal for switching applications in enhancement mode, it features a complex configuration in a small outline package with no lead terminals.
IRFL9110TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
2N7002KW
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 2.5 ohm; Maximum Operating Temperature: 150 Cel; Package Shape: RECTANGULAR;
2N7002T
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; No. of Elements: 1; Maximum Drain Current (ID): .115 A;
BSS123LT1G
BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.
BSS84
Micro Commercial Components
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-236AB;
BSS138K-7
BSS138K-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.31A and operating temperature up to 150°C, it offers efficient performance in small outline packages.
MMBF4117
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;
NDS355AN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JESD-30 Code: R-PDSO-G3; Terminal Position: DUAL;
2N7000
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Drain Current (Abs) (ID): .2 A; Minimum DS Breakdown Voltage: 60 V;
ZXMP6A13FTA
ZXMP6A13FTA by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, 1.1A Drain Current, and 0.4 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with ENHANCEMENT MODE operation up to 150°C.
NTR4170NT1G
NTR4170NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 3.2A ID, and 0.055 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with built-in diode. This small outline transistor has a max power dissipation of 1.25W and can withstand temperatures up to 150°C.
FDC6327C
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; JESD-30 Code: R-PDSO-G6; Maximum Drain Current (ID): 2.7 A;
IRLML2502TRPBF-1
Infineon Technologies
Infineon's IRLML2502TRPBF-1 is a N-channel FET with 20V DS breakdown voltage and 4.2A max drain current. Ideal for enhancement mode operation, it has a built-in diode and 0.045 ohm RDS(on). Widely used in small outline packages for applications requiring high power dissipation up to 1.25W at temperatures ranging from -55°C to 150°C.
2N7000_D26Z
2N7000_D26Z by Fairchild Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With 0.4W Power Dissipation and -55 to 150 °C operating temperature range, it offers reliable performance.
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2SK3666-2-TB-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Moisture Sensitivity Level (MSL): 1; Transistor Element Material: SILICON;
2SK3666-3-TB-E
Small Signal Field-Effect Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
2SK3557-6-TB-E
Sanyo Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e6; JEDEC-95 Code: TO-236AB; Terminal Position: DUAL;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; No. of Elements: 1; JEDEC-95 Code: TO-236AB;
2SK3018T106
ROHM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Shape: RECTANGULAR; JESD-609 Code: e1;
2SK3557-7-TB-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): 260; JESD-609 Code: e6; Package Body Material: PLASTIC/EPOXY;
2SK3065T100
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Operating Temperature: 150 Cel; Transistor Application: SWITCHING;
2SK3018-TP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G3;
2SK3019TL
ROHM's 2SK3019TL is a N-CHANNEL FET with 30V DS breakdown voltage and 0.1A max drain current. Ideal for switching applications, it features a built-in diode, GULL WING terminals, and operates in enhancement mode. With small outline package style and 150°C max temp, it offers low on-resistance of 8 ohm.
2SK3377-AZ
Nec Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PSIP-T3;
Renesas Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Drain Current (ID): 20 A; Peak Reflow Temperature (C): 260;
2SK3541T2L
ROHM's 2SK3541T2L is a N-CHANNEL FET with 30V DS breakdown voltage, 0.1A max drain current, and 8 ohm RDS. Ideal for switching applications in small outline packages, operating at up to 150°C with METAL-OXIDE SEMICONDUCTOR technology.
2SK30ATM
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .1 W; No. of Terminals: 3; Terminal Finish: TIN LEAD;
2SK30ATM-GR
2SK30ATM-GR by Toshiba is a N-CHANNEL small signal FET transistor with a max power dissipation of 0.1W. It is commonly used as an amplifier in various applications.
2SK30ATM-O
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .1 W; JESD-30 Code: O-PBCY-T3; No. of Terminals: 3;
2SK30ATM-Y
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .1 W; No. of Terminals: 3; Package Style (Meter): CYLINDRICAL;
2SK389-BL
N-CHANNEL; Configuration: COMMON SUBSTRATE, 2 ELEMENTS; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Field Effect Transistor Technology: JUNCTION; Qualification: Not Qualified;
2SK3408-T1B-A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; JESD-609 Code: e6; Terminal Position: DUAL;
2SK369-BL
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Operating Mode: DEPLETION MODE;
2SK3557-7
Sanyo Electric
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: JUNCTION;
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