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ROHM Small Signal Field Effect Transistors (FET) 16

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
RW1E025RPT2CR by ROHM

RW1E025RPT2CR

ROHM

ROHM's RW1E025RPT2CR is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features a max ID of 2.5A, 0.075 ohm RDS(on), and operates in ENHANCEMENT MODE. With a small outline package style and peak reflow temp of 260°C, it offers efficient performance in various electronic devices.

SINGLE WITH BUILT-IN DIODE

30 V

2.5 A

2.5 A

.075 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e2

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.7 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

DUAL

10

SWITCHING

SILICON

RK7002T116 by ROHM

RK7002T116

ROHM

ROHM RK7002T116 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.115A max drain current. Ideal for switching applications, it features a built-in diode, GULL WING terminals, and operates in enhancement mode. The transistor has a max power dissipation of 0.225W and can withstand temperatures up to 150°C.

SINGLE WITH BUILT-IN DIODE

60 V

.115 A

.115 A

7.5 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G3

e1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.225 W

Not Qualified

FET General Purpose Power

YES

TIN SILVER COPPER

GULL WING

DUAL

SWITCHING

SILICON

UM5K1NTR by ROHM

UM5K1NTR

ROHM

ROHM UM5K1NTR is a N-CHANNEL FET with 2 elements & built-in diode for switching applications. Features include 30V DS breakdown voltage, 0.1A max drain current, and 8 ohm max on resistance. Ideal for common source configuration in small outline packages at up to 150°C operating temp.

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

.1 A

.1 A

8 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G5

e2

2

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.15 W

Not Qualified

FET General Purpose Power

YES

TIN COPPER

GULL WING

DUAL

SWITCHING

SILICON

RK7002AT116 by ROHM

RK7002AT116

ROHM

ROHM RK7002AT116 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.3A max drain current, and 1.5 ohm RDS(on). Ideal for switching applications in small outline packages with GULL WING terminals. Operating in enhancement mode at up to 150°C, it offers efficient performance in various electronic devices.

SINGLE WITH BUILT-IN DIODE

60 V

.3 A

.3 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

TIN SILVER COPPER

GULL WING

DUAL

SWITCHING

SILICON

RTQ035P02TR by ROHM

RTQ035P02TR

ROHM

ROHM's RTQ035P02TR is a P-CHANNEL FET with 20V DS breakdown voltage and 3.5A max drain current. Ideal for switching applications, it features a built-in diode, 0.07 ohm RDS(on), and operates in enhancement mode at up to 150°C.

SINGLE WITH BUILT-IN DIODE

20 V

3.5 A

3.5 A

.07 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e1

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.25 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

RTR025P02TL by ROHM

RTR025P02TL

ROHM

ROHM RTR025P02TL is a P-CHANNEL FET with 20V DS Breakdown Voltage, 2.5A ID, and 0.105 ohm RDS(on). Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at up to 150°C, it's suitable for ENHANCEMENT MODE operations requiring high drain current capabilities.

SINGLE WITH BUILT-IN DIODE

20 V

2.5 A

2.5 A

.105 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e1

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

RTR020P02TL by ROHM

RTR020P02TL

ROHM

ROHM RTR020P02TL is a P-CHANNEL FET with 20V DS Breakdown Voltage, 2A Drain Current, and 0.15 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at up to 150°C, it features ENHANCEMENT MODE technology for efficient performance.

SINGLE WITH BUILT-IN DIODE

20 V

2 A

2 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e1

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

TT8M2TR by ROHM

TT8M2TR

ROHM

ROHM's TT8M2TR is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has max drain current of 2.5A and on-resistance of 0.09 ohm. Operating at up to 150°C, this MOSFET comes in a small outline package with 8 terminals.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

2.5 A

2.5 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

1.25 W

Not Qualified

Other Transistors

YES

FLAT

DUAL

10

SWITCHING

SILICON

RSF010P03TL by ROHM

RSF010P03TL

ROHM

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .35 ohm;

SINGLE WITH BUILT-IN DIODE

30 V

1 A

1 A

.35 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F3

e2

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.8 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

DUAL

10

SWITCHING

SILICON

RTF015N03TL by ROHM

RTF015N03TL

ROHM

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;

SINGLE WITH BUILT-IN DIODE

30 V

1.5 A

1.5 A

.34 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F3

e2

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.8 W

Not Qualified

FET General Purpose Power

YES

TIN COPPER

FLAT

DUAL

10

SWITCHING

SILICON

TT8J3TR by ROHM

TT8J3TR

ROHM

ROHM TT8J3TR is a P-CHANNEL FET with 2 elements, built-in diode, and 30V DS breakdown voltage. Ideal for SWITCHING applications, it has a max ID of 2.5A and 0.084Ω RDS(on). This SMALL OUTLINE transistor operates in ENHANCEMENT MODE with METAL-OXIDE SEMICONDUCTOR technology.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

2.5 A

.084 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

1

2

8

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

YES

FLAT

DUAL

10

SWITCHING

SILICON

BSM400D12P3G002 by ROHM

BSM400D12P3G002

ROHM

Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

NOT SPECIFIED

NOT SPECIFIED

RSR010N10HZGTL by ROHM

RSR010N10HZGTL

ROHM

ROHM's RSR010N10HZGTL is a N-CHANNEL FET with 100V DS breakdown voltage and 1A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.58 ohm on-resistance. Its GULL WING terminals and AEC-Q101 standard make it suitable for automotive electronics.

SINGLE WITH BUILT-IN DIODE

100 V

1 A

.58 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

1 W

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

BSM400D12P2G003 by ROHM

BSM400D12P2G003

ROHM

Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

NOT SPECIFIED

NOT SPECIFIED

BSM600C12P3G201 by ROHM

BSM600C12P3G201

ROHM

Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

NOT SPECIFIED

NOT SPECIFIED

BSS84WT106 by ROHM

BSS84WT106

ROHM

ROHM BSS84WT106 is a P-CHANNEL FET with 60V DS breakdown voltage and 0.21A ID. Ideal for switching applications, it features a built-in diode, 6.4 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount designs with GULL WING terminals, it has a max power dissipation of 0.3W and can withstand temperatures from -55 to 150°C.

SINGLE WITH BUILT-IN DIODE

60 V

.21 A

6.4 ohm

METAL-OXIDE SEMICONDUCTOR

3 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

.3 W

YES

GULL WING

DUAL

SWITCHING

SILICON