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RK7002T116

ROHM

RK7002T116 by ROHM

ROHM RK7002T116 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.115A max drain current. Ideal for switching applications, it features a built-in diode, GULL WING terminals, and operates in enhancement mode. The transistor has a max power dissipation of 0.225W and can withstand temperatures up to 150°C.

Median Price

$0.082

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Avnet

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Farnell

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Element14

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Nova Conductors

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Dan-Mar Components

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Overview

Upgrade your electronic projects with the RK7002T116 by ROHM, a top-quality N-CHANNEL Small Signal Field Effect Transistor (FET) designed for switching applications. With ROHM's reputation for excellence in semiconductor manufacturing, you can trust in the reliability and performance of this transistor. Its single configuration with a built-in diode offers convenience and efficiency, while its small outline package makes it ideal for space-constrained designs. Experience enhanced functionality and superior results with the RK7002T116 - the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes this transistor lightweight and durable, perfect for surface mount applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are commonly used in switching applications, making this transistor suitable for a variety of electronic projects.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode in this transistor simplifies circuit design and improves efficiency in switching applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides fast and efficient performance in various electronic circuits.

Surface Mount: YES

With surface mount capability, this transistor can be easily integrated into modern printed circuit board designs.

Minimum DS Breakdown Voltage: 60 V

The high breakdown voltage of 60V ensures reliable operation and protection against voltage spikes in the circuit.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact footprint, ideal for space-constrained applications.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation allows for easy control of the transistor's conductivity, making it suitable for various switching applications.

Maximum Drain Current (Abs) (ID): 0.115 A

The 0.115A maximum drain current ensures sufficient current handling capacity for moderate power applications.

No. of Terminals: 3

With 3 terminals, this transistor can be easily connected in a circuit and offers flexibility in circuit design.

Maximum Power Dissipation (Abs): 0.225 W

The 0.225W maximum power dissipation rating ensures reliable operation under varying load conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board while providing efficient heat dissipation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and low power consumption, making this transistor energy-efficient.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments without performance degradation.

Transistor Element Material: SILICON

Silicon-based transistor elements provide high performance, reliability, and compatibility with common electronic components.

Terminal Finish: TIN SILVER COPPER

The tin-silver-copper terminal finish ensures good conductivity and solderability for reliable connections in the circuit.

Maximum Drain-Source On Resistance: 7.5 ohm

The low on-resistance of 7.5 ohms minimizes power loss and improves efficiency in switching applications.

Terminal Position: DUAL

The dual terminal position allows for easy and secure connections, ensuring reliable performance in the circuit.

Maximum Feedback Capacitance (Crss): 5 pF

The low feedback capacitance of 5pF minimizes signal distortion and improves high-frequency performance in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) RK7002T116 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.115 A

Maximum Drain Current (ID):

.115 A

Maximum Drain-Source On Resistance:

7.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RK7002T116 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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