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RK7002

ROHM

RK7002 by ROHM

ROHM's RK7002 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.115A drain current, and 7.5 ohm on resistance. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology. Operating at up to 150°C, it offers high performance in enhancement mode configurations.

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Cyclops Electronics Ltd

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Velocity Electronics

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Nova Conductors

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$1.690

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$1.622

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AZTECH Wire

Italy . 442 parts In-Stock

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Ampacity Inc.

Singapore . 368 parts In-Stock

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Assy Fe

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Argo Parts USA

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Continental Prestige Electronics

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Bastille Electronics

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Overview

Experience the cutting-edge technology of the RK7002 by ROHM, a top-quality Small Signal Field Effect Transistor perfect for switching applications. With a robust design and N-CHANNEL configuration, this transistor offers enhanced performance and reliability. ROHM's reputation for excellence ensures that this product meets the highest industry standards. Discover the value of the RK7002 today and elevate your electronic projects with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow and control, making it suitable for various switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Minimum DS Breakdown Voltage: 60 V

Can handle relatively high voltages, making it suitable for diverse electronic circuits.

Surface Mount: YES

Easy to install on circuit boards and saves space, making it ideal for compact designs.

Maximum Drain-Source On Resistance: 7.5 ohm

Low resistance allows for efficient current flow, reducing power loss and improving overall performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) RK7002 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.115 A

Maximum Drain Current (ID):

.115 A

Maximum Drain-Source On Resistance:

7.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RK7002 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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