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RK7002A

Changzhou Galaxy Century Microelectronics

RK7002A by Changzhou Galaxy Century Microelectronics

RK7002A by Changzhou Galaxy Century Microelectronics is a N-CHANNEL FET with 60V DS breakdown voltage. It's a single transistor with built-in diode for switching applications. Operating in enhancement mode, it has max ID of 0.3A and RDS(on) of 7.5 ohm, suitable for surface mount designs in various electronic devices.

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Nova Conductors

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AZTECH Wire

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Overview

Upgrade your electronics with the RK7002A by Changzhou Galaxy Century Microelectronics, a top-quality Small Signal Field Effect Transistor. Designed for switching applications, this N-CHANNEL transistor offers reliable performance and efficiency. With a built-in diode and a maximum DS Breakdown Voltage of 60V, this enhancement mode transistor is perfect for various electronic projects. Trust in the expertise of Changzhou Galaxy Century Microelectronics to deliver high-quality components that will elevate your creations. Experience the value and benefits of the RK7002A today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors have faster switching speeds and higher conductivity, making them ideal for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse current protection, making this transistor more versatile and reliable.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high efficiency and fast response times.

Surface Mount: YES

Surface mount technology enables easy and secure PCB assembly, saving time and space in electronic devices.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltages without malfunctioning, ensuring long-term reliability.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement on a circuit board, optimizing space utilization.

Terminal Form: GULL WING

The gull wing terminal form provides strong mechanical stability, reducing the risk of damage during assembly and operation.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer precise control over the switching process, resulting in improved performance and efficiency.

No. of Terminals: 3

The 3-terminal design simplifies circuit connections and enhances the overall functionality of the transistor.

Package Style (Meter): SMALL OUTLINE

The small outline package style is compact and lightweight, making it suitable for applications with limited space constraints.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high switching speeds, low power consumption, and improved noise performance.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand extreme conditions and maintain stable performance.

Transistor Element Material: SILICON

Silicon-based transistors offer high reliability, low leakage currents, and consistent performance over time.

Minimum Operating Temperature: -65 °C

The wide temperature range ensures reliable operation even in harsh environments with extreme temperatures.

Maximum Drain Current (ID): 0.3 A

The high maximum drain current allows for efficient power handling, making this transistor suitable for high-current applications.

Maximum Drain-Source On Resistance: 7.5 ohm

The low on-resistance minimizes power loss and heat generation, improving overall efficiency and performance.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit design and enable easy integration into a variety of electronic devices.

Technical Specifications

Small Signal Field Effect Transistors (FET) RK7002A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Changzhou Galaxy Century Microelectronics

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.3 A

Maximum Drain-Source On Resistance:

7.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RK7002A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Changzhou Galaxy Century Microelectronics

Galaxy is an IDM semiconductor company focusing on the R&D, manufacture and sales of discrete devices. The main products include all kinds of Diodes, SiC, MOSFETs, Transistors, Analog ICs, Photocouplers, LEDs and other discrete semiconductor devices. We can provide customers with series products and technical solutions with high applicability and reliability to meet their one-stop purchasing needs. Our products are widely used in computers and peripherals, household appliances, adapters and power supplies, network communications, automotive electronics, industrial control and many other fields

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