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RK7002BT116

ROHM

RK7002BT116 by ROHM

ROHM's RK7002BT116 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.25A max drain current. Ideal for switching applications, it features a built-in diode, GULL WING terminals, and operates in enhancement mode. With a max power dissipation of 0.2W and peak reflow temp of 260°C, it offers reliable performance in small outline packages.

Median Price

$0.056

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DigiKey

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Verical

USA . 3,326 parts In-Stock

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$0.051

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Chip1Stop

Japan . 326 parts In-Stock

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$0.040

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$0.038

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326

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Nova Conductors

Japan . 450 parts In-Stock

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Mobius Materials

USA . 3,878 parts In-Stock

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Flip Electronics

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Vyrian

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NAC Semi

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IBS Electronics

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Semi Source

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Netroflash

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Ampacity Inc.

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Overview

Discover the RK7002BT116 by ROHM, a top-quality small signal field-effect transistor that offers unrivaled performance and reliability. Manufactured by ROHM, a trusted name in the industry known for their superior products, this N-channel transistor is perfect for a wide range of switching applications. With its single configuration and built-in diode, this transistor provides customers with exceptional value and benefits. Trust in ROHM to deliver cutting-edge technology and innovation with the RK7002BT116, offering customers the advantages they need for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically offer better performance and efficiency compared to P-channel transistors, making this product a good choice.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more versatile applications and circuit designs, making this transistor a convenient choice.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power dissipation.

Surface Mount: YES

Surface mount technology allows for easy and compact integration onto circuit boards, making this transistor suitable for modern electronics.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are easier to control and offer better performance in switching applications, making this product a reliable choice.

Technical Specifications

Small Signal Field Effect Transistors (FET) RK7002BT116 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.25 A

Maximum Drain Current (ID):

.25 A

Maximum Drain-Source On Resistance:

3.2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RK7002BT116 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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