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UM5K1NTR

ROHM

UM5K1NTR by ROHM

ROHM UM5K1NTR is a N-CHANNEL FET with 2 elements & built-in diode for switching applications. Features include 30V DS breakdown voltage, 0.1A max drain current, and 8 ohm max on resistance. Ideal for common source configuration in small outline packages at up to 150°C operating temp.

Median Price

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Lifecycle Status

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5

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1k+

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ComSIT Distribution GmbH

Germany . 9,000 parts In-Stock

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Vyrian

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Cyclops Electronics Ltd

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Nova Conductors

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Prism Electronics

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AZTECH Wire

Italy . 1,080 parts In-Stock

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Authorized Procurement Solutions

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Cyclops Electronics Ltd (Excess)

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Aranea Global

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Overview

Experience the cutting-edge technology with the UM5K1NTR by ROHM, a premium quality N-CHANNEL Small Signal Field Effect Transistor (FET) designed for high-performance switching applications. With its common source configuration and built-in diode, this transistor offers seamless operation and enhanced efficiency. Perfect for a wide range of electronic devices, the UM5K1NTR guarantees reliability and durability, making it a valuable choice for customers looking for top-notch components. Upgrade your projects with the unmatched benefits and advantages of this superior product from ROHM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this transistor lightweight and durable, ideal for use in portable devices or applications where reliability is crucial.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and faster switching speeds compared to P-channel transistors, making them suitable for high-speed switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can effectively control the flow of current in electronic circuits, making it suitable for use in various automation and control systems.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are normally off and require a threshold voltage to turn on, offering better control over power consumption and reducing the risk of accidental circuit activation.

Maximum Drain-Source On Resistance: 8 ohm

With a low drain-source on resistance of 8 ohms, this transistor minimizes power loss and heat dissipation, ensuring efficient operation and enhancing overall performance in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) UM5K1NTR attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

.1 A

Maximum Drain Current (ID):

.1 A

Maximum Drain-Source On Resistance:

8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e2

No. of Elements:

2

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

UM5K1NTR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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