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RTR025P02TL

ROHM

RTR025P02TL by ROHM

ROHM RTR025P02TL is a P-CHANNEL FET with 20V DS Breakdown Voltage, 2.5A ID, and 0.105 ohm RDS(on). Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at up to 150°C, it's suitable for ENHANCEMENT MODE operations requiring high drain current capabilities.

Median Price

$0.345

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$0.192

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Verical

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Overview

Unlock the power of precision with the RTR025P02TL by ROHM, a top-quality P-CHANNEL Field Effect Transistor designed for switching applications. Manufactured with cutting-edge technology and featuring a single configuration with a built-in diode, this transistor offers unmatched performance and reliability. Perfect for a wide range of electronic devices, this small signal FET is sure to enhance your projects with its maximum drain current of 2.5A and low on-resistance. Trust ROHM to deliver excellence in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is lightweight and durable, making the transistor easy to handle and long-lasting.

Polarity or Channel Type: P-CHANNEL

P-channel transistors typically have lower leakage current and higher electron mobility, leading to better overall performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast and efficient performance in on/off operations.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20 V, this transistor can handle higher voltages without failing, improving reliability.

Maximum Drain Current (ID): 2.5 A

A high maximum drain current rating of 2.5 A allows this transistor to handle higher power loads, making it versatile and suitable for various applications.

Maximum Power Dissipation (Abs): 1 W

The transistor can dissipate up to 1 W of power without overheating, ensuring stable operation even under demanding conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance characteristics such as low power consumption and high switching speeds, making this transistor energy-efficient.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, ensuring reliable operation in challenging environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) RTR025P02TL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

2.5 A

Maximum Drain Current (ID):

2.5 A

Maximum Drain-Source On Resistance:

.105 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RTR025P02TL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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