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RTR040N03HZGTL

ROHM

RTR040N03HZGTL by ROHM

ROHM RTR040N03HZGTL is a N-CHANNEL FET with 30V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and GULL WING terminals. Operating in enhancement mode, it offers 4A max drain current and 0.066 ohm max on resistance.

Median Price

$1.050

Lifecycle Status

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9

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1k+

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DigiKey

USA . 8,758 parts In-Stock

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$1.050

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$0.429

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$0.300

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$0.230

8,758

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$0.429

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Mouser Electronics

USA . 3,838 parts In-Stock

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$1.050

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$0.430

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$0.301

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$0.246

3,838

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$0.430

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$0.246

Newark

USA . 385 parts In-Stock

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$1.140

100+ parts

$0.524

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$0.395

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385

$1.140

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Element14

Singapore . 705 parts In-Stock

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$1.520

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$0.622

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$0.394

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705

$1.520

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Verical

USA . 1,162 parts In-Stock

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Chip1Stop

Japan . 879 parts In-Stock

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$0.371

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Farnell

UK . 705 parts In-Stock

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$0.365

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$0.255

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$0.204

705

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Nova Conductors

Japan . 100 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Ampacity Inc.

Singapore . 3,307 parts In-Stock

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$0.235

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Continental Prestige Electronics

USA . 4,075 parts In-Stock

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$0.484

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$0.329

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$0.209

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$0.166

4,075

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$0.329

$0.209

$0.166

CoreStaff

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$0.227

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$0.177

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2,800

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Aranea Global

USA . 2,000 parts In-Stock

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Overview

Upgrade your electronic projects with the RTR040N03HZGTL by ROHM, a top-tier manufacturer known for quality and reliability. This N-CHANNEL Small Signal Field Effect Transistor is perfect for switching applications, offering enhanced performance and a built-in diode for added convenience. With a maximum power dissipation of 1W and a minimum DS breakdown voltage of 30V, this transistor ensures optimal efficiency and durability. Whether you're a hobbyist or a professional, this transistor's versatility and high-performance capabilities make it a must-have component for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have faster switching speeds and higher input impedance, making them ideal for switching applications in electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient switching and protection against reverse voltage, enhancing the versatility of this transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance and precise control in electronic circuits.

Surface Mount: YES

Being surface mountable, this transistor is easy to integrate on circuit boards, saving space and simplifying the assembly process.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1W, this transistor can handle moderate power levels efficiently without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high input impedance, low noise, and reliable performance, making this transistor suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures stability and reliability even under demanding operating conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C allows this transistor to be used in a wide range of environments, including extreme cold conditions.

Maximum Drain Current (ID): 4 A

With a maximum drain current of 4A, this transistor can handle high current loads, making it suitable for power switching applications.

Maximum Drain-Source On Resistance: 0.066 ohm

The low drain-source on resistance of 0.066 ohms reduces power loss and improves efficiency in switching applications.

Maximum Feedback Capacitance (Crss): 70 pF

The low maximum feedback capacitance of 70 pF minimizes signal distortion and ensures high-frequency performance in switching circuits.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high reliability and quality, making this transistor suitable for automotive and other demanding applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) RTR040N03HZGTL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

4 A

Maximum Drain-Source On Resistance:

.066 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

70 pF

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RTR040N03HZGTL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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