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RTR020P02FRATL

ROHM

RTR020P02FRATL by ROHM

ROHM RTR020P02FRATL is a P-CHANNEL FET with 20V DS breakdown voltage and 2A max drain current. Ideal for switching applications, it features 0.15 ohm on-resistance, gull wing terminals, and AEC-Q101 standard compliance.

Median Price

$0.191

Lifecycle Status

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Nova Conductors

Japan . 500 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,556 parts In-Stock

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Vyrian

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Continental Prestige Electronics

USA . 5,409 parts In-Stock

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Argo Parts USA

USA . 3,090 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$0.181

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$0.178

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Corohmni

South Africa . 63 parts In-Stock

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$0.653

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Aztec Data Supply Inc.

USA . 2,180 parts In-Stock

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AZTECH Wire

Italy . 624 parts In-Stock

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Ampacity Inc.

Singapore . 1,153 parts In-Stock

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Overview

ROHM presents the RTR020P02FRATL, a high-quality P-CHANNEL Small Signal Field Effect Transistor with a single configuration featuring a built-in diode for switching applications. With its small outline package and gull wing terminals, this enhancement mode transistor offers reliability and efficiency in various electronic devices. Experience the benefits of ROHM's cutting-edge technology and trust in the value that this product brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low output capacitance and high input impedance, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and enhances efficiency in switching operations.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance in controlling current flow.

Surface Mount: YES

Surface mounting capability enables easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle higher voltages without experiencing failure.

Package Shape: RECTANGULAR

The rectangular package shape allows for compact integration into circuits, making it ideal for space-constrained applications.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical strength and secure connectivity during soldering, ensuring reliable performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers precise control over the transistor's conductivity, enhancing its performance in switching applications.

No. of Terminals: 3

The three terminals allow for easy connectivity in circuits, simplifying the overall design and installation process.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and enables high packing density for enhanced circuit performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency, low power consumption, and fast switching speeds, making it suitable for various applications.

Transistor Element Material: SILICON

Silicon-based transistors provide superior performance, reliability, and temperature stability, ensuring long-term functionality in diverse operating conditions.

Maximum Drain Current (ID): 2 A

The high maximum drain current rating of 2A allows for reliable current handling, making it suitable for high-power switching applications.

Maximum Drain-Source On Resistance: 0.15 ohm

The low drain-source on resistance of 0.15 ohm minimizes power loss and heat dissipation, improving efficiency and performance in switching operations.

Terminal Position: DUAL

Dual terminal positioning provides flexibility in circuit design and ensures secure connections, enhancing the overall reliability of the transistor.

Maximum Time At Peak Reflow Temperature (s): 10

The maximum time at peak reflow temperature of 10 seconds ensures proper soldering and thermal management during assembly, preventing damage to the transistor.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for reliable soldering and compatibility with standard reflow processes, ensuring proper functionality in manufacturing.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality for automotive applications, meeting industry requirements for performance and durability.

Technical Specifications

Small Signal Field Effect Transistors (FET) RTR020P02FRATL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

2 A

Maximum Drain-Source On Resistance:

.15 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RTR020P02FRATL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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