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RTR040N03TL

ROHM

RTR040N03TL by ROHM

ROHM RTR040N03TL is a N-CHANNEL FET with 30V DS breakdown voltage and 4A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.066 ohm on-resistance. Package style is small outline, surface mountable with gull wing terminals, suitable for high-temp environments up to 150°C.

Median Price

$0.434

Lifecycle Status

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7

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1k+

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Mouser Electronics

USA . 4,796 parts In-Stock

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$0.530

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$0.266

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$0.530

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$0.266

Chip1Stop

Japan . 2,000 parts In-Stock

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$0.341

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$0.277

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$0.341

$0.277

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Farnell

UK . 1,938 parts In-Stock

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$0.449

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$0.440

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$0.430

1,938

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$0.449

$0.440

$0.430

Element14

Singapore . 1,938 parts In-Stock

1+ parts

-

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$0.418

1k+ parts

$0.409

10k+ parts

$0.401

1,938

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$0.418

$0.409

$0.401

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Chip Stock

USA . 33,500 parts In-Stock

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Prism Electronics

USA . 53 parts In-Stock

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Nova Conductors

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10

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Ampacity Inc.

Singapore . 2,218 parts In-Stock

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$0.156

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$0.156

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Benley Electronics

USA . 5 parts In-Stock

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$0.750

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5

$0.750

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$1.707

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$1.553

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$1.400

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3,000

$1.707

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Assy Fe

Spain . 813,274 parts In-Stock

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RC Electronics

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Kepictronics

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Perfect Parts

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Continental Prestige Electronics

USA . 4,429 parts In-Stock

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$0.246

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$0.187

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$0.181

4,429

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$0.181

Aranea Global

USA . 100 parts In-Stock

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Overview

Unleash the power of innovation with the RTR040N03TL by ROHM, a top-of-the-line small signal Field Effect Transistor that sets a new standard for performance and quality. Manufactured by ROHM, a trusted name in electronic components, this N-CHANNEL transistor with a built-in diode is perfect for a variety of switching applications. With its high efficiency and reliability, this transistor offers customers unbeatable value and benefits. Say goodbye to compromise and hello to excellence with the RTR040N03TL.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: N-CHANNEL

Offers efficient switching capabilities for various electronic applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by incorporating a diode within the transistor package.

Transistor Application: SWITCHING

Optimized for fast switching operations, ideal for control and power management applications.

Surface Mount: YES

Allows for easy and convenient PCB assembly, saving time and effort during manufacturing.

Minimum DS Breakdown Voltage: 30 V

Provides a sufficient safety margin for voltage spikes and surges in the circuit.

Package Shape: RECTANGULAR

Facilitates efficient placement and mounting on the PCB for space-saving solutions.

Terminal Form: GULL WING

Enhances solderability and thermal performance, ensuring reliable connections in the circuit.

Operating Mode: ENHANCEMENT MODE

Offers precise control over the transistor's conductivity, enabling efficient power management.

Maximum Drain Current (Abs) (ID): 4 A

Sufficient current handling capacity for medium to high-power applications.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity in PCB layout design.

Maximum Power Dissipation (Abs): 1 W

Efficiently dissipates heat generated during operation, ensuring long-term performance without overheating.

Package Style (Meter): SMALL OUTLINE

Compact form factor for space-constrained applications, ideal for miniaturized electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high switching speeds and low power consumption, suitable for modern electronic circuits.

Maximum Operating Temperature: 150 °C

Ensures reliable operation in demanding environmental conditions without performance degradation.

Transistor Element Material: SILICON

Offers high reliability and performance stability, essential for long-term circuit operation.

Terminal Finish: TIN SILVER COPPER

Ensures good electrical conductivity and corrosion resistance for reliable connections.

Maximum Drain-Source On Resistance: 0.066 ohm

Low on-resistance for efficient power transfer and minimal voltage drop across the transistor.

Terminal Position: DUAL

Provides flexibility in circuit configurations and layout designs for different applications.

Maximum Time At Peak Reflow Temperature (s): 10

Allows for precise soldering during assembly without damaging the transistor.

Peak Reflow Temperature °C: 260

High-temperature tolerance for reliable soldering and assembly processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) RTR040N03TL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

4 A

Maximum Drain-Source On Resistance:

.066 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RTR040N03TL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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