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RW1E025RPT2CR

ROHM

RW1E025RPT2CR by ROHM

ROHM's RW1E025RPT2CR is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features a max ID of 2.5A, 0.075 ohm RDS(on), and operates in ENHANCEMENT MODE. With a small outline package style and peak reflow temp of 260°C, it offers efficient performance in various electronic devices.

Median Price

$0.950

Lifecycle Status

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1k+

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Verical

USA . 90 parts In-Stock

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Nova Conductors

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Vyrian

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Semtec, LLC

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ACDS - Activité Composants Distribution Service

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CoreStaff

Japan . 90 parts In-Stock

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Netroflash

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AZTECH Wire

Italy . 779 parts In-Stock

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$10.596

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Ampacity Inc.

Singapore . 922 parts In-Stock

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Overview

Discover the RW1E025RPT2CR by ROHM, a top-quality P-CHANNEL Small Signal FET with a built-in diode for enhanced performance in switching applications. With a maximum drain current of 2.5A and a low on-resistance of 0.075 ohm, this transistor offers exceptional reliability and efficiency. Whether you're designing consumer electronics or industrial controls, this transistor's compact package, high breakdown voltage, and advanced MOSFET technology make it the perfect choice for your project. Trust ROHM's expertise and experience in semiconductor manufacturing to deliver value and innovation to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and resistant to damage.

Polarity or Channel Type: P-CHANNEL

P-channel FETs typically have lower on-resistance and higher current carrying capabilities compared to N-channel FETs, making them suitable for high-power applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in on/off scenarios.

Minimum DS Breakdown Voltage: 30 V

With a high breakdown voltage, this transistor can handle higher voltage applications with ease.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving space and enabling automated assembly processes.

Maximum Drain Current (Abs) (ID): 2.5 A

Capable of handling high current loads, making it suitable for power applications.

Maximum Power Dissipation (Abs): 0.7 W

With a high power dissipation rating, this transistor can operate efficiently without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

This technology offers good performance, low power consumption, and high reliability, making it an ideal choice for various applications.

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures, ensuring stability and reliability in demanding environments.

Maximum Drain-Source On Resistance: 0.075 ohm

Low on-resistance minimizes power loss and improves efficiency in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) RW1E025RPT2CR attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

2.5 A

Maximum Drain Current (ID):

2.5 A

Maximum Drain-Source On Resistance:

.075 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RW1E025RPT2CR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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