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RTQ035P02TR

ROHM

RTQ035P02TR by ROHM

ROHM's RTQ035P02TR is a P-CHANNEL FET with 20V DS breakdown voltage and 3.5A max drain current. Ideal for switching applications, it features a built-in diode, 0.07 ohm RDS(on), and operates in enhancement mode at up to 150°C.

Median Price

$0.271

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Bristol Electronics

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Dan-Mar Components

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AZTECH Wire

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Overview

Discover the cutting-edge technology of the RTQ035P02TR from ROHM, a leading manufacturer known for their high-quality components. This P-CHANNEL Small Signal Field Effect Transistor offers unparalleled performance in switching applications, with a built-in diode for added convenience. With a maximum drain current of 3.5A and a low on-resistance of just 0.07 ohm, this transistor ensures reliable operation and efficient power dissipation. Whether you're looking to optimize your circuit design or improve overall system performance, the RTQ035P02TR delivers exceptional value and benefits that will exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: P-CHANNEL

Offers efficient current control and low power consumption, making it suitable for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies the circuit design by incorporating a diode within the transistor, reducing the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast switching speeds and efficient performance.

Surface Mount: YES

Ease of installation and space-saving design, ideal for compact electronic devices and circuit boards.

Minimum DS Breakdown Voltage: 20 V

Can handle higher voltages without breakdown, ensuring reliability and stability in various operating conditions.

Maximum Drain Current (Abs) (ID): 3.5 A

Capable of handling high current loads, making it suitable for applications that require higher power output.

Maximum Power Dissipation (Abs): 1.25 W

Efficient power handling capability, reducing heat generation and increasing overall performance.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without compromising performance, suitable for various industrial applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) RTQ035P02TR attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

3.5 A

Maximum Drain Current (ID):

3.5 A

Maximum Drain-Source On Resistance:

.07 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RTQ035P02TR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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