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TT8M2TR

ROHM

TT8M2TR by ROHM

ROHM's TT8M2TR is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has max drain current of 2.5A and on-resistance of 0.09 ohm. Operating at up to 150°C, this MOSFET comes in a small outline package with 8 terminals.

Median Price

$0.460

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,993 parts In-Stock

1+ parts

$0.768

100+ parts

$0.355

1k+ parts

$0.274

10k+ parts

$0.247

2,993

$0.768

$0.355

$0.274

$0.247

Verical

USA . 2,840 parts In-Stock

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$0.460

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$0.447

2,840

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$0.460

$0.447

Chip1Stop

Japan . 78 parts In-Stock

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$0.312

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$0.312

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Nova Conductors

Japan . 75 parts In-Stock

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$0.403

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$0.403

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Chip Stock

USA . 5,500 parts In-Stock

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Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

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Vyrian

USA . 1,029 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 49 parts In-Stock

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Ampacity Inc.

Singapore . 1,070 parts In-Stock

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$0.235

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1,070

$0.235

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CoreStaff

Japan . 2,840 parts In-Stock

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$0.656

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$0.316

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$0.256

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2,840

$0.656

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AZTECH Wire

Italy . 909 parts In-Stock

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$17.710

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$17.710

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Kepictronics

USA . 12,000 parts In-Stock

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Epart123

USA . 12,000 parts In-Stock

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$0.200

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$0.200

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Authorized Procurement Solutions

USA . 200 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$0.395

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$0.383

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$0.375

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Overview

Enhance your electronic projects with the TT8M2TR by ROHM, a high-quality Small Signal Field Effect Transistor designed for switching applications. With separate N-channel and P-channel elements and built-in diode, this transistor offers versatility and efficiency. Its compact design, maximum drain current of 2.5A, and low on-resistance of 0.09 ohm make it ideal for various circuit designs. Trust in ROHM's reputation for excellence and elevate your creations with the TT8M2TR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance between durability and cost-effectiveness.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Offers flexibility for different circuit configurations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Allows for versatile usage in various applications.

Transistor Application: SWITCHING

Ideal for use in switching applications due to its fast response time.

Surface Mount: YES

Easy to install on PCBs, saving space and reducing assembly time.

Minimum DS Breakdown Voltage: 30 V

Provides a high level of voltage protection for the transistor.

Package Shape: RECTANGULAR

Makes it easy to mount and secure within an electronic device.

Terminal Form: FLAT

Facilitates a secure connection with other components.

Operating Mode: ENHANCEMENT MODE

Offers efficient operation with low power consumption.

No. of Elements: 2

Provides dual functionality for more complex circuit designs.

Maximum Drain Current (Abs) (ID): 2.5 A

Can handle high currents without overheating.

No. of Terminals: 8

Offers multiple connection points for more intricate circuit setups.

Maximum Power Dissipation (Abs): 1.25 W

Can dissipate heat effectively to ensure prolonged operation.

Package Style (Meter): SMALL OUTLINE

Takes up minimal space on a PCB, ideal for compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides reliable performance and efficiency.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without performance degradation.

Transistor Element Material: SILICON

Ensures high reliability and consistent performance over time.

Maximum Drain-Source On Resistance: 0.09 ohm

Provides low resistance for efficient signal transmission.

Terminal Position: DUAL

Allows for versatile mounting orientations within a circuit.

Maximum Time At Peak Reflow Temperature (s): 10

Can withstand high reflow temperatures for soldering without damage.

Peak Reflow Temperature °C: 260

Can endure high reflow temperatures during assembly processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) TT8M2TR attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

2.5 A

Maximum Drain Current (ID):

2.5 A

Maximum Drain-Source On Resistance:

.09 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F8

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TT8M2TR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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