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2SK3377(0)-Z-E2-AZ

Renesas Electronics

2SK3377(0)-Z-E2-AZ by Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 27,000 parts In-Stock

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27,000

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Vyrian

USA . 6,631 parts In-Stock

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6,631

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Distributors (Availability)

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AZTECH Wire

Italy . 529 parts In-Stock

1+ parts

$12.010

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529

$12.010

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Northwest PG Solutions

USA . 2,304 parts In-Stock

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2,304

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Native Components

USA . 774 parts In-Stock

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774

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Technical Specifications

Small Signal Field Effect Transistors (FET) 2SK3377(0)-Z-E2-AZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

20 A

Maximum Drain Current (ID):

20 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

2SK3377(0)-Z-E2-AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Renesas Electronics

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