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ZVN3320FTC

Zetex Plc

ZVN3320FTC by Zetex Plc

Zetex Plc's ZVN3320FTC is a N-CHANNEL FET with 200V DS Breakdown Voltage, 0.06A ID, and 25 ohm RDS(on). Ideal for small outline applications requiring high temp operation up to 150°C. Suitable for enhancing circuit performance in various electronic devices.

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AZTECH Wire

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Overview

Discover the ZVN3320FTC from Zetex Plc, a top-quality N-CHANNEL Small Signal Field Effect Transistor that offers unmatched performance and reliability. Perfect for a variety of applications, this Enhancement Mode FET provides superior functionality in a sleek rectangular package with gull wing terminals for easy installation. With a high DS Breakdown Voltage of 200 V and maximum Drain Current of 0.06 A, this transistor ensures seamless operation even in demanding environments. Upgrade your electronic projects with the ZVN3320FTC and experience unparalleled efficiency and precision.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type:

N-CHANNEL - Offers efficient performance and low on-state resistance in electronic circuits.

Configuration:

SINGLE - Simplifies circuit design and layout with only one transistor to work with.

Surface Mount:

YES - Allows for easy and space-saving PCB assembly in modern electronics.

Minimum DS Breakdown Voltage:

200 V - Ideal for applications requiring high voltage handling capabilities.

Package Shape:

RECTANGULAR - Facilitates easy installation and mounting on a circuit board.

Terminal Form:

GULL WING - Ensures reliable electrical connections and ease of soldering.

Operating Mode:

ENHANCEMENT MODE - Offers precise control over switching operations in the circuit.

No. of Terminals:

3 - Simplifies connection setup and reduces complexity in circuit design.

Package Style (Meter):

SMALL OUTLINE - Saves space on the PCB and allows for compact device designs.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - Provides high input impedance and low output impedance for efficient signal amplification.

Maximum Operating Temperature:

150 °C - Suitable for a wide range of operating conditions without compromising performance.

Transistor Element Material:

SILICON - Offers reliability, high performance, and compatibility with various systems.

Terminal Finish:

MATTE TIN - Ensures good solderability and conductivity for stable connections.

Maximum Drain Current (ID):

0.06 A - Can handle moderate current flows in the circuit without overheating.

Maximum Drain-Source On Resistance:

25 ohm - Facilitates efficient power transfer and minimizes power loss in the circuit.

Terminal Position:

DUAL - Allows for flexibility in circuit designs and layout configurations.

Maximum Feedback Capacitance (Crss):

5 pF - Enables stable high-frequency performance and minimizes signal distortion.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVN3320FTC attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Zetex Plc

Specs

Configuration:

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (ID):

.06 A

Maximum Drain-Source On Resistance:

25 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

ZVN3320FTC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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