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ZVNL120ASTOB

Zetex Plc

ZVNL120ASTOB by Zetex Plc

ZVNL120ASTOB by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. Features include 200V DS Breakdown Voltage, 0.18A ID, and 10Ω RDS(on). With SILICON element material and ENHANCEMENT MODE operation, it operates up to 200°C making it suitable for various electronic circuits.

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2

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1k+

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Vyrian

USA . 7,721 parts In-Stock

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Nova Conductors

Japan . 24 parts In-Stock

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Corohmni

South Africa . 29 parts In-Stock

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$0.683

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29

$0.683

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Aztec Data Supply Inc.

USA . 3,235 parts In-Stock

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$0.929

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$0.929

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AZTECH Wire

Italy . 821 parts In-Stock

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$6.891

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Semicontronic

India . 1,419 parts In-Stock

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$14.050

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$13.699

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$13.628

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Continental Prestige Electronics

USA . 4,176 parts In-Stock

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Argo Parts USA

USA . 3,875 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the ZVNL120ASTOB from Zetex Plc. As a leading manufacturer in the industry, Zetex Plc delivers top-quality Small Signal Field Effect Transistors that are perfect for switching applications. With a minimum DS breakdown voltage of 200V and maximum drain current of 0.18A, this N-CHANNEL transistor offers unparalleled reliability and efficiency. Upgrade your electronics today with the ZVNL120ASTOB and experience the superior quality and performance that Zetex Plc is known for.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for small signal applications.

Polarity or Channel Type: N-CHANNEL

Efficient for low-power applications and compatibility with most circuit designs.

Configuration: SINGLE

Simplified circuit design and ease of integration.

Transistor Application: SWITCHING

Suitable for high-speed switching applications.

Minimum DS Breakdown Voltage: 200 V

Provides a high level of voltage protection.

Package Shape: RECTANGULAR

Space-efficient design for compact applications.

Terminal Form: WIRE

Allows for easy connection and soldering.

Operating Mode: ENHANCEMENT MODE

Provides easier control over the transistor's conductivity.

No. of Terminals: 3

Simplified connection setup.

Package Style (Meter): IN-LINE

Easy to install and secure in place.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high performance and efficiency.

Maximum Operating Temperature: 200 °C

Can withstand high temperatures for reliable operation.

Transistor Element Material: SILICON

Common and reliable material for transistors.

Terminal Finish: MATTE TIN

Provides good conductivity and corrosion resistance.

Maximum Drain Current (ID): 0.18 A

Suitable for low-power applications.

Maximum Drain-Source On Resistance: 10 ohm

Low resistance for efficient signal transmission.

Terminal Position: SINGLE

Simplified connection setup.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVNL120ASTOB attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Zetex Plc

Specs

Configuration:

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (ID):

.18 A

Maximum Drain-Source On Resistance:

10 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVNL120ASTOB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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