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ZVNL110A

Diodes Incorporated

ZVNL110A by Diodes Incorporated

ZVNL110A by Diodes Inc. is a N-CHANNEL FET with 100V DS Breakdown Voltage and 0.32A Drain Current. It operates in ENHANCEMENT MODE, suitable for low-power applications like signal amplification and switching circuits. With a max power dissipation of 0.7W, it offers reliable performance in various electronic devices.

Median Price

$0.724

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 19 parts In-Stock

1+ parts

$0.133

100+ parts

-

1k+ parts

-

10k+ parts

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19

$0.133

-

-

-

DigiKey

USA . 8,890 parts In-Stock

1+ parts

$1.160

100+ parts

$0.477

1k+ parts

$0.336

10k+ parts

$0.262

8,890

$1.160

$0.477

$0.336

$0.262

Mouser Electronics

USA . 7,419 parts In-Stock

1+ parts

$1.160

100+ parts

$0.477

1k+ parts

$0.336

10k+ parts

$0.293

7,419

$1.160

$0.477

$0.336

$0.293

Verical

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.287

4,000

-

-

-

$0.287

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.345

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$0.345

-

-

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TME

Poland . 3,922 parts In-Stock

1+ parts

$0.490

100+ parts

$0.441

1k+ parts

$0.387

10k+ parts

-

3,922

$0.490

$0.441

$0.387

-

Chip Stock

USA . 27,560 parts In-Stock

1+ parts

-

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27,560

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Vyrian

USA . 8,952 parts In-Stock

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8,952

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ComSIT Distribution GmbH

Germany . 8,795 parts In-Stock

1+ parts

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8,795

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Inventory MP

USA . 5,450 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,450

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Bristol Electronics

USA . 5,450 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,450

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Vectronix, Inc

USA . 4,182 parts In-Stock

1+ parts

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4,182

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Extreme Components

USA . 50 parts In-Stock

1+ parts

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50

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Prism Electronics

USA . 4 parts In-Stock

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4

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 8,992 parts In-Stock

1+ parts

$0.218

100+ parts

-

1k+ parts

-

10k+ parts

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8,992

$0.218

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Continental Prestige Electronics

USA . 6,633 parts In-Stock

1+ parts

$0.302

100+ parts

-

1k+ parts

-

10k+ parts

$0.296

6,633

$0.302

-

-

$0.296

Argo Parts USA

USA . 2,092 parts In-Stock

1+ parts

$0.302

100+ parts

-

1k+ parts

-

10k+ parts

$0.293

2,092

$0.302

-

-

$0.293

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.345

100+ parts

-

1k+ parts

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10k+ parts

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1,000

$0.345

-

-

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Aztec Data Supply Inc.

USA . 1,803 parts In-Stock

1+ parts

$0.588

100+ parts

-

1k+ parts

-

10k+ parts

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1,803

$0.588

-

-

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Corohmni

South Africa . 250 parts In-Stock

1+ parts

$1.161

100+ parts

-

1k+ parts

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250

$1.161

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Microchip USA

USA . 5,847 parts In-Stock

1+ parts

$5.005

100+ parts

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1k+ parts

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5,847

$5.005

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Perfect Parts

USA . 18,682 parts In-Stock

1+ parts

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100+ parts

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18,682

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

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Overview

Enhance your electronic projects with the ZVNL110A by Diodes Incorporated, a top-quality N-CHANNEL Small Signal Field Effect Transistor. Designed for enhanced performance and reliability, this transistor offers maximum power dissipation of 0.7 W and a minimum DS breakdown voltage of 100 V. Perfect for a wide range of applications, this product is a must-have for any electronics enthusiast looking to take their projects to the next level. Upgrade your circuits today with the ZVNL110A and experience the difference in quality and performance that Diodes Incorporated is known for.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have higher electron mobility, making them ideal for high-speed switching applications.

Minimum DS Breakdown Voltage: 100 V

With a high breakdown voltage, this transistor can handle high voltage applications with ease.

Maximum Drain Current (ID): 0.32 A

The high drain current capability allows for efficient power handling and performance.

Maximum Power Dissipation (Abs): 0.7 W

With a high power dissipation rating, this transistor can handle heat dissipation effectively, ensuring stable operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology provides high efficiency and fast switching speeds, making this transistor suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for reliable performance in various environmental conditions.

Maximum Drain-Source On Resistance: 3 ohm

Low on-resistance ensures minimal power loss and high efficiency during operation.

Maximum Feedback Capacitance (Crss): 8 pF

Low feedback capacitance helps in reducing signal distortion and improving overall performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVNL110A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

LOW THRESHOLD

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

.32 A

Maximum Drain Current (ID):

.32 A

Maximum Drain-Source On Resistance:

3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

8 pF

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

ZVNL110A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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