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ZVNL110ASTOA

Diodes Incorporated

ZVNL110ASTOA by Diodes Incorporated

Diodes Incorporated ZVNL110ASTOA is a N-CHANNEL FET with 100V DS breakdown voltage, 0.32A ID, and 4.5Ω RDS(on). Ideal for switching applications due to its single configuration and enhancement mode operation. Packaged in plastic/epoxy with wire terminals, suitable for various electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vectronix, Inc

USA . 4,682 parts In-Stock

1+ parts

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4,682

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Vyrian

USA . 610 parts In-Stock

1+ parts

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610

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 5,000 parts In-Stock

1+ parts

$0.496

100+ parts

-

1k+ parts

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5,000

$0.496

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Corohmni

South Africa . 148 parts In-Stock

1+ parts

$0.803

100+ parts

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148

$0.803

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AZTECH Wire

Italy . 610 parts In-Stock

1+ parts

$13.129

100+ parts

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610

$13.129

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Component Stockers USA

USA . 354 parts In-Stock

1+ parts

$99.990

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354

$99.990

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Continental Prestige Electronics

USA . 3,659 parts In-Stock

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3,659

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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Argo Parts USA

USA . 2,561 parts In-Stock

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2,561

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Bastille Electronics

Australia . 200 parts In-Stock

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200

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Overview

Discover the power of the ZVNL110ASTOA by Diodes Incorporated, a high-quality N-CHANNEL Small Signal Field Effect Transistor designed for switching applications. With a minimum DS Breakdown Voltage of 100V and maximum Drain Current of 0.32A, this FET offers reliable performance in a compact rectangular package. Trust in the expertise of Diodes Incorporated to deliver top-notch semiconductor technology that ensures seamless operation. Elevate your electronic projects with the value and benefits provided by the ZVNL110ASTOA, offering efficiency and precision for all your switching needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for small signal applications.

Polarity or Channel Type: N-CHANNEL

Commonly used for switching applications, offering efficient performance.

Minimum DS Breakdown Voltage: 100 V

Suitable for handling higher voltages, ensuring reliable operation.

Transistor Application: SWITCHING

Specifically designed for switching tasks, providing optimized performance.

No. of Terminals: 3

Simple configuration with three terminals, making it easy to integrate into circuits.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Modern technology offering improved efficiency and reliability in signal processing.

Maximum Drain Current (ID): 0.32 A

Able to handle relatively high currents, suitable for various applications.

Maximum Drain-Source On Resistance: 4.5 ohm

Low on-resistance, reducing power dissipation and improving efficiency.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVNL110ASTOA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

.32 A

Maximum Drain-Source On Resistance:

4.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVNL110ASTOA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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