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ZVNL110ASTOB

Diodes Incorporated

ZVNL110ASTOB by Diodes Incorporated

ZVNL110ASTOB by Diodes Inc. is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.32A ID, and 4.5Ω RDS(ON). Ideal for SWITCHING applications due to ENHANCEMENT MODE operation in a PLASTIC/EPOXY package with IN-LINE style and Matte Tin finish.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

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1,000

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Vyrian

USA . 626 parts In-Stock

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626

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,560 parts In-Stock

1+ parts

$1.372

100+ parts

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4,560

$1.372

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Corohmni

South Africa . 182 parts In-Stock

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$1.846

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182

$1.846

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AZTECH Wire

Italy . 626 parts In-Stock

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$7.319

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626

$7.319

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Argo Parts USA

USA . 4,141 parts In-Stock

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4,141

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Continental Prestige Electronics

USA . 1,311 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Enhance your electronic projects with the ZVNL110ASTOB by Diodes Incorporated. Known for their high-quality components, Diodes Incorporated delivers reliable Small Signal Field Effect Transistors (FET) that excel in switching applications. The N-CHANNEL transistor offers a minimum DS Breakdown Voltage of 100V and a maximum Drain Current of 0.32A, making it ideal for various circuit designs. With its Matte Tin terminal finish and Metal-Oxide Semiconductor technology, this FET ensures optimal performance and efficiency. Upgrade your projects with the ZVNL110ASTOB and experience the value and reliability that Diodes Incorporated products bring to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of PLASTIC/EPOXY material for the package body makes this transistor lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors typically have better current-carrying capabilities and lower ON-state resistance compared to P-CHANNEL transistors, making them suitable for high-performance applications.

Configuration: SINGLE

The SINGLE configuration simplifies the circuit design and makes this transistor easy to integrate into electronic circuits.

Transistor Application: SWITCHING

Designed for SWITCHING applications, this transistor can quickly turn on and off, making it suitable for power control and digital logic circuits.

Minimum DS Breakdown Voltage: 100 V

With a minimum DS Breakdown Voltage of 100 V, this transistor can handle high voltage applications with ease.

Package Shape: RECTANGULAR

The RECTANGULAR package shape allows for easy mounting on circuit boards and efficient use of space.

Terminal Form: WIRE

The WIRE terminal form enables easy and secure connections during the soldering process.

Operating Mode: ENHANCEMENT MODE

The ENHANCEMENT MODE operation allows for more precise control over the transistor's conductivity, making it versatile for various applications.

No. of Terminals: 3

With 3 terminals, this transistor offers flexibility in circuit design and connectivity options.

Package Style (Meter): IN-LINE

The IN-LINE package style is convenient for space-constrained applications and allows for easy integration in line with other electronic components.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The METAL-OXIDE SEMICONDUCTOR technology used in this transistor provides high performance and reliability, making it suitable for demanding applications.

Transistor Element Material: SILICON

SILICON transistors offer high efficiency and switching speeds, making them ideal for applications requiring precision and speed.

Terminal Finish: Matte Tin (Sn)

The Matte Tin terminal finish ensures good solderability, preventing oxidation and ensuring a reliable connection.

Maximum Drain Current (ID): 0.32 A

With a maximum Drain Current of 0.32 A, this transistor can handle moderate power levels efficiently.

Maximum Drain-Source On Resistance: 4.5 ohm

The low Maximum Drain-Source On Resistance of 4.5 ohm results in minimal power dissipation and improved efficiency.

Terminal Position: SINGLE

The SINGLE terminal position simplifies circuit connections and enhances compatibility with standard PCB layouts.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVNL110ASTOB attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

.32 A

Maximum Drain-Source On Resistance:

4.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVNL110ASTOB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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