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ZVNL120A

Diodes Incorporated

ZVNL120A by Diodes Incorporated

ZVNL120A by Diodes Inc. is a N-CHANNEL FET with 200V DS Breakdown Voltage, 0.18A Drain Current, and 10 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and 150°C max temp.

Median Price

$0.340

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Future Electronics

Canada . 2,000 parts In-Stock

1+ parts

$0.340

100+ parts

-

1k+ parts

$0.315

10k+ parts

$0.280

2,000

$0.340

-

$0.315

$0.280

Mouser Electronics

USA . 206 parts In-Stock

1+ parts

$1.300

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$0.538

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-

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206

$1.300

$0.538

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DigiKey

USA . 1,773 parts In-Stock

1+ parts

$1.410

100+ parts

$0.586

1k+ parts

$0.415

10k+ parts

$0.326

1,773

$1.410

$0.586

$0.415

$0.326

Verical

USA . 12,000 parts In-Stock

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$0.256

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$0.256

Arrow

USA . 4,000 parts In-Stock

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$0.263

4,000

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$0.263

Distributors (In-Stock)

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Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.345

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15

$0.345

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NAC Semi

USA . 45 parts In-Stock

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$0.740

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45

$0.740

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TME

Poland . 1,973 parts In-Stock

1+ parts

$1.080

100+ parts

$0.457

1k+ parts

$0.332

10k+ parts

$0.320

1,973

$1.080

$0.457

$0.332

$0.320

Sensible Micro Corp

USA . 13,632 parts In-Stock

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13,632

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 5,625 parts In-Stock

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Chip Stock

USA . 5,000 parts In-Stock

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Vyrian

USA . 4,707 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,556 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 130 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 4,791 parts In-Stock

1+ parts

$0.218

100+ parts

$0.213

1k+ parts

$0.211

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4,791

$0.218

$0.213

$0.211

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Argo Parts USA

USA . 3,227 parts In-Stock

1+ parts

$0.345

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$0.334

3,227

$0.345

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$0.334

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.345

100+ parts

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$0.327

10k+ parts

$0.320

2,000

$0.345

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$0.327

$0.320

Continental Prestige Electronics

USA . 1,573 parts In-Stock

1+ parts

$0.345

100+ parts

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$0.338

1,573

$0.345

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$0.338

Corohmni

South Africa . 55 parts In-Stock

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$0.360

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55

$0.360

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Aztec Data Supply Inc.

USA . 1,186 parts In-Stock

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$1.807

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1,186

$1.807

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Microchip USA

USA . 5,302 parts In-Stock

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$5.005

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5,302

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Metaverse IC Inc.

Canada . 99,000 parts In-Stock

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Perfect Parts

USA . 27,740 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,018 parts In-Stock

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Robosynatics

Brazil . 12,154 parts In-Stock

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$0.353

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$0.346

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$0.346

12,154

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$0.353

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$0.346

Lucentia Tech

USA . 12,154 parts In-Stock

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$0.353

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$0.346

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$0.346

12,154

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$0.346

iodParts Technologies Inc.

India . 3,891 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 130 parts In-Stock

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130

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Overview

Discover the power of the ZVNL120A by Diodes Incorporated, a top-quality Small Signal Field Effect Transistor designed for switching applications. With a sleek cylindrical package and N-Channel configuration, this transistor offers enhanced performance and reliability. Perfect for a wide range of electronic projects, the ZVNL120A provides customers with superior efficiency and precise control. Trust in Diodes Incorporated for cutting-edge technology and unrivaled value in every product they offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors are known for their high efficiency and fast switching speeds, making them ideal for switching applications.

Minimum DS Breakdown Voltage: 200 V

With a minimum breakdown voltage of 200V, this transistor can handle higher voltages without breakdown, ensuring reliability in demanding applications.

Maximum Drain Current (Abs) (ID): 0.18 A

The high maximum drain current of 0.18A allows for efficient power handling and performance in switching applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and space-saving, making it easy to integrate into a variety of electronic devices.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, making it suitable for industrial and automotive applications.

Maximum Drain-Source On Resistance: 10 ohm

The low on-resistance of 10 ohms results in minimal power loss and efficient performance during switching operations.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVNL120A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (Abs) (ID):

.18 A

Maximum Drain Current (ID):

.18 A

Maximum Drain-Source On Resistance:

10 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

7 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVNL120A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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