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ZVNL110ASTZ

Diodes Incorporated

ZVNL110ASTZ by Diodes Incorporated

ZVNL110ASTZ by Diodes Incorporated is a N-CHANNEL FET with 100V DS breakdown voltage, 0.32A max drain current, and 4.5Ω max on resistance. Ideal for switching applications due to its single configuration and enhancement mode operation. Package style IN-LINE, terminal finish MATTE TIN and technology MOSFET.

Median Price

$1.200

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 254 parts In-Stock

1+ parts

$0.704

100+ parts

$0.384

1k+ parts

$0.294

10k+ parts

$0.226

254

$0.704

$0.384

$0.294

$0.226

Mouser Electronics

USA . 4,955 parts In-Stock

1+ parts

$1.190

100+ parts

$0.492

1k+ parts

$0.347

10k+ parts

$0.296

4,955

$1.190

$0.492

$0.347

$0.296

Element14

Singapore . 254 parts In-Stock

1+ parts

$1.210

100+ parts

$0.656

1k+ parts

$0.484

10k+ parts

$0.478

254

$1.210

$0.656

$0.484

$0.478

Newark

USA . 244 parts In-Stock

1+ parts

$1.230

100+ parts

$0.507

1k+ parts

$0.357

10k+ parts

-

244

$1.230

$0.507

$0.357

-

DigiKey

USA . 1,919 parts In-Stock

1+ parts

$1.410

100+ parts

$0.586

1k+ parts

$0.415

10k+ parts

-

1,919

$1.410

$0.586

$0.415

-

Verical

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.287

12,000

-

-

-

$0.287

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.377

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$0.377

-

-

-

Chip Stock

USA . 16,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16,000

-

-

-

-

Vyrian

USA . 4,709 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,709

-

-

-

-

ComSIT Distribution GmbH

Germany . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Semtec, LLC

USA . 85 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

85

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 4,682 parts In-Stock

1+ parts

$0.218

100+ parts

-

1k+ parts

-

10k+ parts

-

4,682

$0.218

-

-

-

Semicontronic

India . 4,562 parts In-Stock

1+ parts

$0.218

100+ parts

$0.213

1k+ parts

$0.211

10k+ parts

-

4,562

$0.218

$0.213

$0.211

-

Continental Prestige Electronics

USA . 4,562 parts In-Stock

1+ parts

$0.344

100+ parts

-

1k+ parts

-

10k+ parts

$0.337

4,562

$0.344

-

-

$0.337

Argo Parts USA

USA . 1,356 parts In-Stock

1+ parts

$0.344

100+ parts

-

1k+ parts

-

10k+ parts

$0.334

1,356

$0.344

-

-

$0.334

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.377

100+ parts

-

1k+ parts

$0.359

10k+ parts

$0.351

100

$0.377

-

$0.359

$0.351

Corohmni

South Africa . 300 parts In-Stock

1+ parts

$0.385

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$0.385

-

-

-

Aztec Data Supply Inc.

USA . 2,362 parts In-Stock

1+ parts

$1.149

100+ parts

-

1k+ parts

-

10k+ parts

-

2,362

$1.149

-

-

-

Perfect Parts

USA . 24,493 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

24,493

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

iodParts Technologies Inc.

India . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Overview

Enhance your electronic projects with the ZVNL110ASTZ from Diodes Incorporated. This small signal field-effect transistor offers high-quality performance and reliability, making it perfect for a wide range of switching applications. With its N-channel configuration and 100V minimum breakdown voltage, this transistor provides excellent value and efficiency. Trust in Diodes Incorporated's reputation for excellence and choose the ZVNL110ASTZ for all your project needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and longevity.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer better performance and efficiency compared to P-channel FETs in many applications.

Configuration: SINGLE

Simplifies circuit design and makes the transistor easy to work with.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in those scenarios.

Minimum DS Breakdown Voltage: 100 V

With a high breakdown voltage, this FET can handle higher voltages without breakdown, making it versatile and suitable for various applications.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and mounting in circuit boards.

Terminal Form: WIRE

Wire terminals make connections secure and reliable, reducing the risk of connection issues.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer high input impedance and low input current, making them efficient for switching applications.

No. of Terminals: 3

Having 3 terminals simplifies connection and setup in circuits.

Package Style (Meter): IN-LINE

The in-line package style allows for space-saving and efficient circuit design.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds and low power consumption, making it ideal for many electronic applications.

Transistor Element Material: SILICON

Silicon-based transistors provide good performance, reliability, and compatibility with existing circuit designs.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and ensures stable connections.

Maximum Drain Current (ID): 0.32 A

With a maximum current rating of 0.32 A, this FET can handle moderate current loads effectively.

Maximum Drain-Source On Resistance: 4.5 ohm

Low on-resistance ensures minimal voltage drop across the FET, improving efficiency and reducing heat dissipation.

Terminal Position: SINGLE

Single terminal position simplifies PCB layout and mounting.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand reflow soldering process for up to 30 seconds, ensuring easy and reliable manufacturing.

Peak Reflow Temperature °C: 260

Withstands peak reflow temperatures of up to 260°C, ensuring robust soldering and reliability in manufacturing processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVNL110ASTZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

.32 A

Maximum Drain-Source On Resistance:

4.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVNL110ASTZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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