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ZVNL120ASTZ

Diodes Incorporated

ZVNL120ASTZ by Diodes Incorporated

ZVNL120ASTZ by Diodes Inc. is a N-CHANNEL FET with 200V DS breakdown voltage, 0.18A ID, and 10Ω RDS(ON). Ideal for switching applications due to its ENHANCEMENT MODE operation. Features include SILICON element material, Matte Tin finish, and RECTANGULAR package shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip Stock

USA . 46,000 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 29,390 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 6,000 parts In-Stock

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Lantek

USA . 2,000 parts In-Stock

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Vyrian

USA . 1,431 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Benley Electronics

USA . 36 parts In-Stock

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$0.400

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Aztec Data Supply Inc.

USA . 4,704 parts In-Stock

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$0.908

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Corohmni

South Africa . 86 parts In-Stock

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$1.978

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AZTECH Wire

Italy . 594 parts In-Stock

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$7.171

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Semicontronic

India . 557 parts In-Stock

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$43.050

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$41.974

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$41.758

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Kepictronics

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Metaverse IC Inc.

Canada . 4,810 parts In-Stock

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Continental Prestige Electronics

USA . 2,761 parts In-Stock

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GreenTree Electronics

Israel . 2,000 parts In-Stock

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Argo Parts USA

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Bastille Electronics

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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Overview

Discover the power of innovation with the ZVNL120ASTZ by Diodes Incorporated. Designed with precision and excellence, this Small Signal Field Effect Transistor (FET) is perfect for a variety of switching applications. Its N-CHANNEL configuration and 200V minimum DS breakdown voltage ensure reliable performance every time. With a matte tin finish and a maximum drain current of 0.18A, this transistor offers unmatched value and efficiency. Upgrade your projects with the ZVNL120ASTZ and experience superior quality and functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the transistor suitable for various environments.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance characteristics and are commonly used in high-frequency applications.

Configuration: SINGLE

Single configuration simplifies circuit design and layout, making integration easier and more efficient.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring smooth and reliable operation in such scenarios.

Minimum DS Breakdown Voltage: 200 V

With a high breakdown voltage, this transistor can handle higher voltage loads without damage.

Package Shape: RECTANGULAR

Rectangular shape allows for compact and space-saving placement on a circuit board.

Terminal Form: WIRE

Wire terminals provide a secure connection and ease of installation in various types of circuits.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors have better control over current flow, enhancing performance and efficiency.

No. of Terminals: 3

Three terminals provide flexibility in circuit design and allow for various connection options.

Package Style (Meter): IN-LINE

In-line packaging style offers easy integration into existing circuit boards or systems.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high efficiency and performance in a compact package.

Transistor Element Material: SILICON

Silicon-based transistors offer high reliability and temperature tolerance for robust performance.

Terminal Finish: Matte Tin (Sn)

Matte tin finish ensures good conductivity and corrosion resistance for long-lasting use.

Maximum Drain Current (ID): 0.18 A

With a high maximum drain current, this transistor can handle moderate power loads effectively.

Maximum Drain-Source On Resistance: 10 ohm

Low on-resistance allows for efficient power flow and minimal heat dissipation.

Terminal Position: SINGLE

Single terminal position simplifies installation and ensures proper alignment in the circuit layout.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVNL120ASTZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (ID):

.18 A

Maximum Drain-Source On Resistance:

10 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVNL120ASTZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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