Loading...

ZVNL120AM1

Diodes Incorporated

ZVNL120AM1 by Diodes Incorporated

ZVNL120AM1 by Diodes Inc. is a N-CHANNEL FET for SWITCHING applications. Features 200V DS Breakdown Voltage, 0.18A ID, and 10 ohm RDS(on). Utilizes ENHANCEMENT MODE tech with SILICON element in GULL WING package style for surface mount assembly.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,216 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,216

-

-

-

-

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 250 parts In-Stock

1+ parts

$0.519

100+ parts

-

1k+ parts

-

10k+ parts

-

250

$0.519

-

-

-

Aztec Data Supply Inc.

USA . 290 parts In-Stock

1+ parts

$0.652

100+ parts

-

1k+ parts

-

10k+ parts

-

290

$0.652

-

-

-

AZTECH Wire

Italy . 890 parts In-Stock

1+ parts

$17.831

100+ parts

-

1k+ parts

-

10k+ parts

-

890

$17.831

-

-

-

Continental Prestige Electronics

USA . 6,790 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,790

-

-

-

-

Argo Parts USA

USA . 4,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,600

-

-

-

-

Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

300

-

-

-

-

Overview

Experience the unmatched quality and reliability of Diodes Incorporated with the ZVNL120AM1 small signal field effect transistor. Designed for switching applications, this N-channel transistor offers a versatile solution for various electronic projects. With a minimum DS breakdown voltage of 200V and maximum drain current of 0.18A, this enhancement mode transistor provides exceptional performance. Trust in Diodes Incorporated to deliver cutting-edge technology and superior products that exceed your expectations. Choose the ZVNL120AM1 for value, efficiency, and innovation in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have better performance characteristics and higher efficiency compared to P-Channel transistors.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it ideal for use in electronic circuits that require rapid on/off switching.

Surface Mount: YES

Surface mount technology allows for compact and efficient PCB design, saving space and reducing overall system size.

Minimum DS Breakdown Voltage: 200 V

High breakdown voltage ensures reliable operation in high voltage applications, providing protection against overvoltage conditions.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are normally off devices, which can improve overall power efficiency and reduce standby power consumption.

Maximum Drain Current (ID): 0.18 A

A high maximum drain current rating allows for handling of larger current loads, making it suitable for a wide range of applications.

Maximum Drain-Source On Resistance: 10 ohm

Low on-resistance results in minimal power loss and improved efficiency in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVNL120AM1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (ID):

.18 A

Maximum Drain-Source On Resistance:

10 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVNL120AM1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20