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ZVNL120ASTOA

Diodes Incorporated

ZVNL120ASTOA by Diodes Incorporated

Diodes Inc. ZVNL120ASTOA is a N-CHANNEL FET with 200V DS breakdown voltage and 0.18A ID. Ideal for switching applications, it features 10 ohm RDS(on) and operates in enhancement mode. Package: PLASTIC/EPOXY, RECTANGULAR shape, WIRE terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 44,000 parts In-Stock

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Vyrian

USA . 318 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Aztec Data Supply Inc.

USA . 4,279 parts In-Stock

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$0.483

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Corohmni

South Africa . 415 parts In-Stock

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$1.787

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AZTECH Wire

Italy . 506 parts In-Stock

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$13.964

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Semicontronic

India . 145 parts In-Stock

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$63.050

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$61.474

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$61.158

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$63.050

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$61.158

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Component Stockers USA

USA . 336 parts In-Stock

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$99.990

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Kepictronics

USA . 50,000 parts In-Stock

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Argo Parts USA

USA . 2,402 parts In-Stock

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Continental Prestige Electronics

USA . 316 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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Overview

Unlock a world of possibilities with the ZVNL120ASTOA by Diodes Incorporated. Crafted with precision and quality, this N-CHANNEL Small Signal Field Effect Transistor is designed for optimal performance in SWITCHING applications. Its robust design and advanced technology ensure reliable operation, while its compact size makes it ideal for space-constrained projects. Experience enhanced efficiency and superior functionality with the ZVNL120ASTOA, offering unparalleled value and benefits to our customers. Elevate your projects with Diodes Incorporated's trusted expertise and innovative solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes this transistor lightweight and durable, ideal for applications where weight and space are important factors.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance characteristics compared to P-channel transistors, making this product a good choice for high-speed switching applications.

Minimum DS Breakdown Voltage: 200 V

With a minimum breakdown voltage of 200 V, this transistor can handle high voltage applications with ease, providing reliable performance in demanding conditions.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low ON resistance, making it a reliable choice for efficient power management.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and reliability, ensuring stable performance over a wide range of operating conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVNL120ASTOA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (ID):

.18 A

Maximum Drain-Source On Resistance:

10 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVNL120ASTOA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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