Loading...

ZVNL110ASMTA

Diodes Incorporated

ZVNL110ASMTA by Diodes Incorporated

ZVNL110ASMTA by Diodes Inc. is a N-CHANNEL FET for SWITCHING applications. Features 100V DS Breakdown Voltage, 0.32A ID, and 4.5Ω RDS(ON). With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for compact SMALL OUTLINE packages in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

R&J Components

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,500

-

-

-

-

Vyrian

USA . 600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

600

-

-

-

-

Resion

USA . 544 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

544

-

-

-

-

Nova Conductors

Japan . 82 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

82

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 171 parts In-Stock

1+ parts

$0.406

100+ parts

-

1k+ parts

-

10k+ parts

-

171

$0.406

-

-

-

Aztec Data Supply Inc.

USA . 56,742 parts In-Stock

1+ parts

$0.767

100+ parts

-

1k+ parts

-

10k+ parts

-

56,742

$0.767

-

-

-

AZTECH Wire

Italy . 600 parts In-Stock

1+ parts

$6.502

100+ parts

-

1k+ parts

-

10k+ parts

-

600

$6.502

-

-

-

Continental Prestige Electronics

USA . 6,483 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,483

-

-

-

-

Argo Parts USA

USA . 2,909 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,909

-

-

-

-

Aranea Global

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Overview

Upgrade your electronic devices with the reliable ZVNL110ASMTA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality small signal field effect transistors for various applications such as switching. With its N-channel configuration and 100V minimum DS breakdown voltage, this transistor offers exceptional performance and efficiency. Say goodbye to unreliable components and discover the value and benefits of using Diodes Incorporated products in your projects. Trust in the expertise of Diodes Incorporated to enhance the functionality of your electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable packaging material that can withstand various environmental conditions, making it a reliable choice for different applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have faster switching speeds and lower on-resistance compared to P-channel FETs, providing efficient performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient power control and management in various electronic circuits.

Surface Mount: YES

Surface-mount package makes for easy and convenient installation on PCBs, saving space and simplifying the manufacturing process.

Minimum DS Breakdown Voltage: 100 V

High breakdown voltage capability ensures reliable operation and protection against voltage spikes or surges in the circuit.

Maximum Drain Current (ID): 0.32 A

Capable of handling relatively high drain currents, suitable for applications requiring moderate power dissipation.

Maximum Drain-Source On Resistance: 4.5 ohm

Low on-resistance helps minimize power loss and heat generation, improving efficiency and performance of the device.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVNL110ASMTA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

.32 A

Maximum Drain-Source On Resistance:

4.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVNL110ASMTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20