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ZVP3306ASTOB

Zetex Plc

ZVP3306ASTOB by Zetex Plc

ZVP3306ASTOB by Zetex Plc is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 14 ohm Drain-Source On Resistance, 0.16A Drain Current, and operates at up to 200°C. The transistor has a RECTANGULAR shape, WIRE terminals, and uses METAL-OXIDE SEMICONDUCTOR technology.

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Vyrian

USA . 6,779 parts In-Stock

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6,779

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Nova Conductors

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AZTECH Wire

Italy . 500 parts In-Stock

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500

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Aranea Global

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Overview

Elevate your electronics with the ZVP3306ASTOB by Zetex Plc. Crafted with precision and expertise, this P-Channel Field Effect Transistor offers unparalleled performance in switching applications. Its high-quality construction guarantees reliability and efficiency, making it a valuable addition to any project. Experience seamless functionality and superior results with this small signal FET. Upgrade your devices with Zetex Plc's cutting-edge technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors have lower leakage current and higher mobility compared to N-channel transistors, making this product efficient for switching applications.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this transistor can handle higher voltages, making it versatile for different circuit requirements.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors require a positive voltage to turn on, providing easier control and allowing for precise switching operations.

Maximum Drain Current (ID): 0.16 A

The high maximum drain current of 0.16A ensures that this transistor can handle relatively high current loads, making it suitable for various applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVP3306ASTOB attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Zetex Plc

Specs

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.16 A

Maximum Drain-Source On Resistance:

14 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVP3306ASTOB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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