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ZVP3310A

Diodes Incorporated

ZVP3310A by Diodes Incorporated

ZVP3310A by Diodes Inc. is a P-CHANNEL FET with 100V DS breakdown voltage and 0.14A max drain current. Ideal for applications requiring low power dissipation, such as signal amplification in electronic circuits. Operating in enhancement mode, it features a max operating temp of 150°C and 20 ohm drain-source resistance.

Median Price

$1.040

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RS (Exports)

UK . 44 parts In-Stock

1+ parts

$0.440

100+ parts

-

1k+ parts

$0.340

10k+ parts

$0.310

44

$0.440

-

$0.340

$0.310

Farnell

UK . 3,916 parts In-Stock

1+ parts

$0.667

100+ parts

$0.399

1k+ parts

$0.252

10k+ parts

$0.247

3,916

$0.667

$0.399

$0.252

$0.247

Element14

Singapore . 3,916 parts In-Stock

1+ parts

$1.040

100+ parts

$0.716

1k+ parts

$0.466

10k+ parts

-

3,916

$1.040

$0.716

$0.466

-

Mouser Electronics

USA . 7,082 parts In-Stock

1+ parts

$1.070

100+ parts

$0.439

1k+ parts

$0.308

10k+ parts

$0.266

7,082

$1.070

$0.439

$0.308

$0.266

Newark

USA . 1,349 parts In-Stock

1+ parts

$1.100

100+ parts

$0.452

1k+ parts

$0.317

10k+ parts

-

1,349

$1.100

$0.452

$0.317

-

DigiKey

USA . 6,661 parts In-Stock

1+ parts

$1.300

100+ parts

$0.539

1k+ parts

$0.380

10k+ parts

$0.297

6,661

$1.300

$0.539

$0.380

$0.297

Verical

USA . 32,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.257

32,000

-

-

-

$0.257

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$0.309

100+ parts

-

1k+ parts

-

10k+ parts

-

900

$0.309

-

-

-

Chip Stock

USA . 43,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

43,000

-

-

-

-

Vyrian

USA . 13,738 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,738

-

-

-

-

Component Sense

UK . 70 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

70

-

-

-

-

R&J Components

USA . 40 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

40

-

-

-

-

Euro-Tech

UK . 20 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20

-

-

-

-

LittleDiode

UK . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 5,789 parts In-Stock

1+ parts

$0.309

100+ parts

-

1k+ parts

-

10k+ parts

$0.303

5,789

$0.309

-

-

$0.303

Argo Parts USA

USA . 4,296 parts In-Stock

1+ parts

$0.309

100+ parts

-

1k+ parts

-

10k+ parts

$0.300

4,296

$0.309

-

-

$0.300

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.309

100+ parts

$0.303

1k+ parts

$0.294

10k+ parts

$0.287

500

$0.309

$0.303

$0.294

$0.287

Advanced Electronics

New Zealand . 54 parts In-Stock

1+ parts

$0.681

100+ parts

$0.620

1k+ parts

$0.558

10k+ parts

-

54

$0.681

$0.620

$0.558

-

Corohmni

South Africa . 171 parts In-Stock

1+ parts

$0.780

100+ parts

-

1k+ parts

-

10k+ parts

-

171

$0.780

-

-

-

Aztec Data Supply Inc.

USA . 299 parts In-Stock

1+ parts

$1.703

100+ parts

-

1k+ parts

-

10k+ parts

-

299

$1.703

-

-

-

Microchip USA

USA . 2,756 parts In-Stock

1+ parts

$4.485

100+ parts

-

1k+ parts

-

10k+ parts

-

2,756

$4.485

-

-

-

Robosynatics

Brazil . 22,920 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

22,920

-

-

-

-

Lucentia Tech

USA . 22,920 parts In-Stock

1+ parts

-

100+ parts

$1.226

1k+ parts

$1.201

10k+ parts

$1.201

22,920

-

$1.226

$1.201

$1.201

Perfect Parts

USA . 20,070 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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20,070

-

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Overview

Enhance your electronic designs with the ZVP3310A Small Signal Field Effect Transistor by Diodes Incorporated. Manufactured with top-quality materials and advanced technology, this P-CHANNEL FET offers reliability and performance in a variety of applications. With a maximum power dissipation of 0.625W and a minimum DS breakdown voltage of 100V, this transistor ensures efficient operation and longevity. Trust Diodes Incorporated to deliver value and innovation with the ZVP3310A, providing customers with the benefits of enhanced functionality and quality components for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the FET, ensuring reliable performance over time.

Polarity or Channel Type: P-CHANNEL

Allows for efficient current flow, making it suitable for specific circuit applications.

Minimum DS Breakdown Voltage: 100 V

Handles high voltage levels, offering reliability in various electrical systems.

Maximum Drain Current (Abs) (ID): 0.14 A

Suitable for low-power applications, ensuring efficient energy usage.

Maximum Power Dissipation (Abs): 0.625 W

Efficiently manages heat dissipation, preventing overheating and potential damage to the FET.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high performance and reliability in electronic circuits, ensuring optimal functionality.

Maximum Operating Temperature: 150 °C

Operates effectively in a wide range of temperature conditions, suitable for various environments.

Maximum Feedback Capacitance (Crss): 5 pF

Provides stable feedback and control in the circuit, enhancing overall performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVP3310A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

.14 A

Maximum Drain Current (ID):

.14 A

Maximum Drain-Source On Resistance:

20 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

ZVP3310A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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